JP6061743B2 - 有機半導体膜の形成方法 - Google Patents

有機半導体膜の形成方法 Download PDF

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Publication number
JP6061743B2
JP6061743B2 JP2013054250A JP2013054250A JP6061743B2 JP 6061743 B2 JP6061743 B2 JP 6061743B2 JP 2013054250 A JP2013054250 A JP 2013054250A JP 2013054250 A JP2013054250 A JP 2013054250A JP 6061743 B2 JP6061743 B2 JP 6061743B2
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JP
Japan
Prior art keywords
organic semiconductor
substrate
semiconductor film
cover member
forming
Prior art date
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Expired - Fee Related
Application number
JP2013054250A
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English (en)
Japanese (ja)
Other versions
JP2014179568A5 (OSRAM
JP2014179568A (ja
Inventor
宇佐美　由久
由久 宇佐美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2013054250A priority Critical patent/JP6061743B2/ja
Priority to PCT/JP2014/053930 priority patent/WO2014141838A1/ja
Priority to CN201480011019.4A priority patent/CN105144357B/zh
Priority to EP14764302.7A priority patent/EP2975636B1/en
Priority to TW103106369A priority patent/TWI595571B/zh
Publication of JP2014179568A publication Critical patent/JP2014179568A/ja
Publication of JP2014179568A5 publication Critical patent/JP2014179568A5/ja
Priority to US14/842,445 priority patent/US9472760B2/en
Application granted granted Critical
Publication of JP6061743B2 publication Critical patent/JP6061743B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2013054250A 2013-03-15 2013-03-15 有機半導体膜の形成方法 Expired - Fee Related JP6061743B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2013054250A JP6061743B2 (ja) 2013-03-15 2013-03-15 有機半導体膜の形成方法
CN201480011019.4A CN105144357B (zh) 2013-03-15 2014-02-19 有机半导体膜的形成方法
EP14764302.7A EP2975636B1 (en) 2013-03-15 2014-02-19 Process for forming organic semiconductor film
PCT/JP2014/053930 WO2014141838A1 (ja) 2013-03-15 2014-02-19 有機半導体膜の形成方法
TW103106369A TWI595571B (zh) 2013-03-15 2014-02-26 有機半導體膜的形成方法
US14/842,445 US9472760B2 (en) 2013-03-15 2015-09-01 Process for forming organic semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013054250A JP6061743B2 (ja) 2013-03-15 2013-03-15 有機半導体膜の形成方法

Publications (3)

Publication Number Publication Date
JP2014179568A JP2014179568A (ja) 2014-09-25
JP2014179568A5 JP2014179568A5 (OSRAM) 2015-07-02
JP6061743B2 true JP6061743B2 (ja) 2017-01-18

Family

ID=51536514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013054250A Expired - Fee Related JP6061743B2 (ja) 2013-03-15 2013-03-15 有機半導体膜の形成方法

Country Status (6)

Country Link
US (1) US9472760B2 (OSRAM)
EP (1) EP2975636B1 (OSRAM)
JP (1) JP6061743B2 (OSRAM)
CN (1) CN105144357B (OSRAM)
TW (1) TWI595571B (OSRAM)
WO (1) WO2014141838A1 (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017134991A1 (ja) * 2016-02-03 2017-08-10 富士フイルム株式会社 有機半導体膜の製造装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5092269B2 (ja) * 2006-04-26 2012-12-05 コニカミノルタホールディングス株式会社 有機半導体薄膜および有機半導体デバイスの製造方法
EP2028683B1 (en) * 2006-05-24 2017-12-27 Nissan Chemical Industries, Ltd. Process for producing an organic transistor.
CN101461047B (zh) * 2006-06-07 2011-06-15 松下电器产业株式会社 半导体元件及其制造方法以及电子器件及其制造方法
US9741901B2 (en) * 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
KR20130048677A (ko) * 2009-05-26 2013-05-10 엥떼르위니베르시테르 미크로엘렉트로니카 쌍트륌 베제드두블르베 기판에 유기 재료 층을 형성시키는 방법
WO2011040155A1 (ja) 2009-10-02 2011-04-07 国立大学法人大阪大学 有機半導体膜の製造方法および有機半導体膜アレイ
JP5590659B2 (ja) * 2010-03-01 2014-09-17 国立大学法人岩手大学 磁場中有機単結晶薄膜作成法及び作成装置
US20130143357A1 (en) * 2010-08-23 2013-06-06 Sony Corporation Method of forming organic thin film and organic thin film forming apparatus, as well as method of manufacturing organic device
JP2013040124A (ja) * 2011-08-15 2013-02-28 Osaka Univ 自己組織化単分子膜形成用の化合物及びそれを用いた有機半導体素子

Also Published As

Publication number Publication date
EP2975636B1 (en) 2020-10-21
US9472760B2 (en) 2016-10-18
WO2014141838A1 (ja) 2014-09-18
EP2975636A4 (en) 2016-03-30
US20150372233A1 (en) 2015-12-24
CN105144357B (zh) 2017-07-14
CN105144357A (zh) 2015-12-09
EP2975636A1 (en) 2016-01-20
TW201440149A (zh) 2014-10-16
JP2014179568A (ja) 2014-09-25
TWI595571B (zh) 2017-08-11

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