JP6059166B2 - 結晶成長制御剤、ｐ型半導体微粒子又はｐ型半導体微粒子膜の形成方法、正孔輸送層形成用組成物、及び太陽電池 - Google Patents

結晶成長制御剤、ｐ型半導体微粒子又はｐ型半導体微粒子膜の形成方法、正孔輸送層形成用組成物、及び太陽電池 Download PDF

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JP6059166B2
JP6059166B2 JP2014052497A JP2014052497A JP6059166B2 JP 6059166 B2 JP6059166 B2 JP 6059166B2 JP 2014052497 A JP2014052497 A JP 2014052497A JP 2014052497 A JP2014052497 A JP 2014052497A JP 6059166 B2 JP6059166 B2 JP 6059166B2
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type semiconductor
crystal growth
hole transport
transport layer
solar cell
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JP2014052497A
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Japanese (ja)
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JP2015177036A5 (enExample
JP2015177036A (ja
Inventor
亮正 仲村
亮正 仲村
篤史 山之内
篤史 山之内
浅井　隆宏
隆宏 浅井
薫 石川
薫 石川
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Priority to JP2014052497A priority Critical patent/JP6059166B2/ja
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to KR1020167028180A priority patent/KR101760633B1/ko
Priority to PCT/JP2015/056979 priority patent/WO2015137324A1/ja
Priority to EP15762215.0A priority patent/EP3116019A4/en
Priority to CN201580012573.9A priority patent/CN106104773B/zh
Priority to US15/124,087 priority patent/US20170018369A1/en
Priority to TW104108124A priority patent/TWI669827B/zh
Publication of JP2015177036A publication Critical patent/JP2015177036A/ja
Publication of JP2015177036A5 publication Critical patent/JP2015177036A5/ja
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JP2014052497A 2014-03-14 2014-03-14 結晶成長制御剤、ｐ型半導体微粒子又はｐ型半導体微粒子膜の形成方法、正孔輸送層形成用組成物、及び太陽電池 Expired - Fee Related JP6059166B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2014052497A JP6059166B2 (ja) 2014-03-14 2014-03-14 結晶成長制御剤、ｐ型半導体微粒子又はｐ型半導体微粒子膜の形成方法、正孔輸送層形成用組成物、及び太陽電池
PCT/JP2015/056979 WO2015137324A1 (ja) 2014-03-14 2015-03-10 結晶成長制御剤、ｐ型半導体微粒子又はｐ型半導体微粒子膜の形成方法、正孔輸送層形成用組成物、及び太陽電池
EP15762215.0A EP3116019A4 (en) 2014-03-14 2015-03-10 CRYSTAL GROWTH CONTROL AGENT, METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM, COMPOSITION FOR FORMING HOLE TRANSPORT LAYER, AND SOLAR CELL
CN201580012573.9A CN106104773B (zh) 2014-03-14 2015-03-10 晶体生长控制剂、p型半导体微粒或p型半导体微粒膜的形成方法、空穴传输层形成用组合物及太阳能电池
KR1020167028180A KR101760633B1 (ko) 2014-03-14 2015-03-10 결정 성장 제어제, p 형 반도체 미립자 또는 p 형 반도체 미립자막의 형성 방법, 정공 수송층 형성용 조성물, 및 태양 전지
US15/124,087 US20170018369A1 (en) 2014-03-14 2015-03-10 CRYSTAL GROWTH CONTROL AGENT, METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM, COMPOSITION FOR FORMING HOLE TRANSPORT LAYER, AND SOLAR CELL
TW104108124A TWI669827B (zh) 2014-03-14 2015-03-13 結晶生長控制劑，ｐ型半導體微粒子或ｐ型半導體微粒子膜的形成方法，正洞輸送層形成用組成物，及太陽電池

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JP2014052497A JP6059166B2 (ja) 2014-03-14 2014-03-14 結晶成長制御剤、ｐ型半導体微粒子又はｐ型半導体微粒子膜の形成方法、正孔輸送層形成用組成物、及び太陽電池

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JP2015177036A5 JP2015177036A5 (enExample) 2016-12-01
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JP2018088480A (ja) * 2016-11-29 2018-06-07 株式会社豊田中央研究所 太陽電池、太陽電池モジュール及び太陽電池の製造方法
JP7319733B1 (ja) 2022-08-31 2023-08-02 株式会社kotobuki 電池性能推定装置、電池性能推定方法、及び電池性能推定プログラム

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JP2003234486A (ja) * 2002-02-07 2003-08-22 Seiko Epson Corp 光電変換素子
JP2003234488A (ja) * 2002-02-07 2003-08-22 Seiko Epson Corp 光電変換素子の製造方法
JP2011129564A (ja) * 2009-12-15 2011-06-30 Fujifilm Corp 光電変換半導体膜を形成する塗布膜及びその製造方法、光電変換半導体膜、光電変換素子、及び太陽電池
WO2013080791A1 (ja) * 2011-11-30 2013-06-06 株式会社村田製作所 化合物半導体超微粒子の製造方法
JP2013211149A (ja) * 2012-03-30 2013-10-10 Ricoh Co Ltd 光電変換素子およびその製造方法

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