JP6058268B2 - インターポーザ及びその形成方法 - Google Patents
インターポーザ及びその形成方法 Download PDFInfo
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- JP6058268B2 JP6058268B2 JP2012019304A JP2012019304A JP6058268B2 JP 6058268 B2 JP6058268 B2 JP 6058268B2 JP 2012019304 A JP2012019304 A JP 2012019304A JP 2012019304 A JP2012019304 A JP 2012019304A JP 6058268 B2 JP6058268 B2 JP 6058268B2
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- 238000000034 method Methods 0.000 title description 74
- 239000000758 substrate Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OGZARXHEFNMNFQ-UHFFFAOYSA-N 1-butylcyclobutene Chemical compound CCCCC1=CCC1 OGZARXHEFNMNFQ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920000417 polynaphthalene Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10378—Interposers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
100a、100b 面
102 マスク層
102a、102b 開口
104a、104b ホール
106,108 絶縁層
110 導電層
112 マスク層
114 絶縁層
116 導電層
202、204 マスク層
Claims (8)
- インターポーザであって、
第1面及び第2面を有する基板と、
前記基板の前記第1面から前記第2面に延出する第1ホールと、
前記基板の前記第1面から前記第2面に延出し、幅が前記第1ホールの幅と異なる第2ホールと、
前記基板上に位置し、且つ、前記第1ホールの側壁及び前記第2ホールの側壁上にまで延出する第1絶縁層と、
前記基板上の前記第1絶縁層上に位置し、且つ、前記第1ホールの前記側壁上にまで延出する第1導電層とを含み、前記第2ホール内に導電層がないことを特徴とするインターポーザ。 - 前記第1ホールの幅は、前記第2ホールの幅と異なり、前記第1絶縁層は、前記第1ホールおよび前記第2ホールを完全には充填せず、前記第1導電層は、前記第1ホールを完全には充填しないことを特徴とする請求項1に記載のインターポーザ。
- さらに、前記第1導電層と前記第1絶縁層との間に位置する第2絶縁層を含み、前記第2絶縁層は、前記基板の前記第1面上に位置し、前記第2絶縁層の厚みは、前記第1絶縁層の厚みより大きいことを特徴とする請求項1に記載のインターポーザ。
- さらに、前記導電層の表面を被覆する第2導電層と、前記第1導電層の一部を被覆する第2絶縁層を含み、前記第2導電層は、前記第1導電層の他の部分を被覆することを特徴とする請求項1に記載のインターポーザ。
- 前記第1導電層の表面を被覆する第2導電層をさらに備え、前記第2導電層は前記第1導電層の一つの側面を被覆することを特徴とする請求項1に記載のインターポーザ。
- 前記第1導電層の表面を被覆する第2導電層をさらに備え、前記第2導電層の一つの側面は、前記第1導電層の一つの側面とほぼ同一平面上にあることを特徴とする請求項1に記載のインターポーザ。
- 前記第2導電層の材料は前記第1導電層の材料と異なることを特徴とする請求項4、5または6に記載のインターポーザ。
- さらに、前記第1導電層の一部を被覆する第2絶縁層を含むことを特徴とする請求項1に記載のインターポーザ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161438145P | 2011-01-31 | 2011-01-31 | |
US61/438,145 | 2011-01-31 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012160734A JP2012160734A (ja) | 2012-08-23 |
JP2012160734A5 JP2012160734A5 (ja) | 2015-03-19 |
JP6058268B2 true JP6058268B2 (ja) | 2017-01-11 |
Family
ID=46565188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012019304A Active JP6058268B2 (ja) | 2011-01-31 | 2012-01-31 | インターポーザ及びその形成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8692300B2 (ja) |
JP (1) | JP6058268B2 (ja) |
CN (1) | CN102625576B (ja) |
TW (1) | TWI459520B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104703409B (zh) * | 2013-12-09 | 2018-03-16 | 深南电路有限公司 | 电路板加工方法和相关装置 |
US9596768B2 (en) * | 2014-03-04 | 2017-03-14 | Qualcomm Incorporated | Substrate with conductive vias |
US10615111B2 (en) * | 2014-10-31 | 2020-04-07 | The Board Of Trustees Of The Leland Stanford Junior University | Interposer for multi-chip electronics packaging |
JP2016225360A (ja) * | 2015-05-27 | 2016-12-28 | 大日本印刷株式会社 | 貫通電極基板並びに貫通電極基板を用いたインターポーザ及び半導体装置 |
CN106298732A (zh) * | 2016-09-29 | 2017-01-04 | 中国电子科技集团公司第四十三研究所 | 一种用于系统级封装的转接板结构 |
CN107706173A (zh) * | 2017-09-30 | 2018-02-16 | 成都嘉纳海威科技有限责任公司 | 硅通孔互联结构及其制备方法以及硅通孔射频传输结构 |
CN115442953A (zh) * | 2022-07-30 | 2022-12-06 | 华为技术有限公司 | 转接板、中框结构和电子装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5977257U (ja) * | 1982-11-15 | 1984-05-25 | オムロン株式会社 | 印刷配線板 |
JPS60116190A (ja) * | 1983-11-28 | 1985-06-22 | 株式会社村田製作所 | 厚膜回路基板 |
JP3546823B2 (ja) * | 2000-09-07 | 2004-07-28 | インターナショナル・ビジネス・マシーンズ・コーポレーション | スルーホール構造および該スルーホール構造を含むプリント基板 |
JP4214292B2 (ja) * | 2001-01-30 | 2009-01-28 | Tdkラムダ株式会社 | プリント基板 |
WO2004107830A1 (ja) * | 2003-06-02 | 2004-12-09 | Nec Corporation | プリント回路基板用コンパクトビア伝送路およびその設計方法 |
US7276787B2 (en) * | 2003-12-05 | 2007-10-02 | International Business Machines Corporation | Silicon chip carrier with conductive through-vias and method for fabricating same |
JP4979213B2 (ja) * | 2005-08-31 | 2012-07-18 | オンセミコンダクター・トレーディング・リミテッド | 回路基板、回路基板の製造方法および回路装置 |
US7462784B2 (en) * | 2006-05-02 | 2008-12-09 | Ibiden Co., Ltd. | Heat resistant substrate incorporated circuit wiring board |
US7719079B2 (en) * | 2007-01-18 | 2010-05-18 | International Business Machines Corporation | Chip carrier substrate capacitor and method for fabrication thereof |
JP2009076727A (ja) * | 2007-09-21 | 2009-04-09 | Mitsubishi Electric Corp | プリント配線板、それを用いた電子機器、及びその製造方法 |
JP5464633B2 (ja) * | 2007-10-17 | 2014-04-09 | 欣興電子股▲フン▼有限公司 | パッケージ基板の製造方法 |
JP2009295859A (ja) * | 2008-06-06 | 2009-12-17 | Oki Semiconductor Co Ltd | 半導体装置および半導体装置の製造方法 |
US8035198B2 (en) * | 2008-08-08 | 2011-10-11 | International Business Machines Corporation | Through wafer via and method of making same |
TWI420622B (zh) * | 2008-11-07 | 2013-12-21 | Unimicron Technology Corp | 嵌埋半導體元件之封裝結構及其製法 |
US8368152B2 (en) * | 2011-04-18 | 2013-02-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS device etch stop |
-
2012
- 2012-01-18 TW TW101101881A patent/TWI459520B/zh active
- 2012-01-27 US US13/360,435 patent/US8692300B2/en active Active
- 2012-01-31 JP JP2012019304A patent/JP6058268B2/ja active Active
- 2012-01-31 CN CN201210025745.4A patent/CN102625576B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN102625576A (zh) | 2012-08-01 |
US20120193811A1 (en) | 2012-08-02 |
TWI459520B (zh) | 2014-11-01 |
CN102625576B (zh) | 2014-10-29 |
TW201232726A (en) | 2012-08-01 |
US8692300B2 (en) | 2014-04-08 |
JP2012160734A (ja) | 2012-08-23 |
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