JP6046871B2 - スパッタ装置および成膜装置 - Google Patents
スパッタ装置および成膜装置 Download PDFInfo
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- JP6046871B2 JP6046871B2 JP2016536796A JP2016536796A JP6046871B2 JP 6046871 B2 JP6046871 B2 JP 6046871B2 JP 2016536796 A JP2016536796 A JP 2016536796A JP 2016536796 A JP2016536796 A JP 2016536796A JP 6046871 B2 JP6046871 B2 JP 6046871B2
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- 238000004544 sputter deposition Methods 0.000 title claims description 56
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 description 41
- 239000010408 film Substances 0.000 description 40
- 230000000052 comparative effect Effects 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 11
- 238000011109 contamination Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L21/00—Vacuum gauges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
Description
Claims (14)
- 基板に膜を形成するためのスパッタリング空間を規定する空間規定部材を有するスパッタ装置であって、
前記空間規定部材は、凹部を有し、
前記凹部の底部には、開口部が設けられ、
前記スパッタ装置は、前記開口部を前記スパッタリング空間から遮蔽する遮蔽部材を備え、
前記開口部は、前記スパッタリング空間内の圧力を計測可能な圧力計が取り付け可能に形成され、
前記遮蔽部材は、少なくとも一部が前記凹部に埋め込まれるように配置され、前記遮蔽部材は、取り外し可能であることを特徴とするスパッタ装置。 - 前記空間規定部材が、真空チャンバの壁の少なくとも一部を構成する部材であることを特徴とする請求項1記載のスパッタ装置。
- 前記空間規定部材が、真空チャンバの内壁を覆うように設けられた防着板であることを特徴とする請求項1記載のスパッタ装置。
- 前記遮蔽部材は、傘形状を有することを特徴とする請求項1記載のスパッタ装置。
- 前記遮蔽部材は、前記凹部の前記底部と前記遮蔽部材との間に隙間を有するように設けられた傘形状の第1の部材と、前記開口部の周辺部に設けられた筒状の第2の部材とからなり、前記第1の部材と前記第2の部材との間の領域が、ラビリンス構造となるように構成されていることを特徴とする請求項1記載のスパッタ装置。
- 前記開口部には、前記スパッタリング空間内の圧力を計測可能な圧力計が取り付けられていることを特徴とする請求項1から5のいずれか1項に記載のスパッタ装置。
- 前記遮蔽部材は、前記圧力計に取り付けられ、前記圧力計から取り外し可能であることを特徴とする請求項1から6のいずれか1項に記載のスパッタ装置。
- 前記遮蔽部材は、カバーと、前記カバーを支持する支持体とを有し、前記圧力計は、凹部を有し、前記支持体は、前記圧力計の前記凹部に挿入されることによって前記圧力計に取り付けられることを特徴とする請求項1から7のいずれか1項に記載のスパッタ装置。
- 前記支持体は、一端が前記カバーに接続され他端が前記圧力計の前記凹部に挿入される柱状形状を有することを特徴とする請求項8に記載のスパッタ装置。
- 前記圧力計は、一端が前記開口部に取り付けられ他端が前記圧力計に取り付けられた接続部材を介して、前記開口部に接続され、前記遮蔽部材は、前記接続部材に取り付けられることを特徴とする請求項6に記載のスパッタ装置。
- 前記遮蔽部材は、前記接続部材から取り外し可能であることを特徴とする請求項10に記載のスパッタ装置。
- 前記遮蔽部材は、カバーと、前記カバーを支持する柱状支持体を有し、前記柱状支持体の一端が前記カバーに接続され、前記柱状支持体の他端が前記開口部に挿入されることを特徴とする請求項1に記載のスパッタ装置。
- 基板に膜を形成するための空間を規定する空間規定部材を有する成膜装置であって、
前記空間規定部材は、凹部を有し、前記凹部の底部には、前記空間と測定器とを連通させるための開口部が設けられ、
前記成膜装置は、前記空間と前記開口部との間の直線経路を遮断する遮蔽部材を備え、前記遮蔽部材の少なくとも一部は、前記凹部に配置され、前記遮蔽部材は、取り外し可能であることを特徴とする成膜装置。 - 前記遮蔽部材は、カバーと、前記カバーを支持する柱状支持体を有し、前記柱状支持体の一端が前記カバーに接続され、前記柱状支持体の他端が前記開口部に挿入されることを特徴とする請求項13に記載の成膜装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014162885 | 2014-08-08 | ||
JP2014162885 | 2014-08-08 | ||
PCT/JP2015/071788 WO2016021496A1 (ja) | 2014-08-08 | 2015-07-31 | スパッタ装置および処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP6046871B2 true JP6046871B2 (ja) | 2016-12-21 |
JPWO2016021496A1 JPWO2016021496A1 (ja) | 2017-04-27 |
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JP2016536796A Active JP6046871B2 (ja) | 2014-08-08 | 2015-07-31 | スパッタ装置および成膜装置 |
Country Status (5)
Country | Link |
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US (1) | US10062553B2 (ja) |
JP (1) | JP6046871B2 (ja) |
KR (1) | KR101939505B1 (ja) |
SG (1) | SG11201700850QA (ja) |
WO (1) | WO2016021496A1 (ja) |
Families Citing this family (1)
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JP6990121B2 (ja) * | 2018-03-06 | 2022-01-12 | 株式会社Screenホールディングス | 基板処理装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05247639A (ja) * | 1992-03-05 | 1993-09-24 | Fujitsu Ltd | スパッタ装置 |
JP2000028465A (ja) * | 1998-07-06 | 2000-01-28 | Anelva Corp | 水晶真空計 |
JP2010163690A (ja) * | 2008-07-31 | 2010-07-29 | Canon Anelva Corp | プラズマ処理装置 |
WO2011067820A1 (ja) * | 2009-12-04 | 2011-06-09 | キヤノンアネルバ株式会社 | スパッタリング装置、及び電子デバイスの製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017433A (ja) * | 2001-06-28 | 2003-01-17 | Tokyo Electron Ltd | チャンバセンサポート |
US7001491B2 (en) * | 2003-06-26 | 2006-02-21 | Tokyo Electron Limited | Vacuum-processing chamber-shield and multi-chamber pumping method |
JP2010150572A (ja) | 2008-12-24 | 2010-07-08 | Seiko Epson Corp | スパッタリング装置及び半導体装置の製造方法 |
KR20120102105A (ko) * | 2010-01-26 | 2012-09-17 | 캐논 아네르바 가부시키가이샤 | 필름 형성 방법, 필름 형성 장치 및 필름 형성 장치를 위한 제어 유닛 |
JP2015060877A (ja) * | 2013-09-17 | 2015-03-30 | トランスフォーム・ジャパン株式会社 | 基板処理装置 |
JP5632946B2 (ja) * | 2013-10-16 | 2014-11-26 | キヤノンアネルバ株式会社 | 遮蔽部材 |
JP2015131994A (ja) * | 2014-01-14 | 2015-07-23 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
-
2015
- 2015-07-31 SG SG11201700850QA patent/SG11201700850QA/en unknown
- 2015-07-31 KR KR1020177005670A patent/KR101939505B1/ko active IP Right Grant
- 2015-07-31 WO PCT/JP2015/071788 patent/WO2016021496A1/ja active Application Filing
- 2015-07-31 JP JP2016536796A patent/JP6046871B2/ja active Active
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2017
- 2017-01-31 US US15/420,472 patent/US10062553B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05247639A (ja) * | 1992-03-05 | 1993-09-24 | Fujitsu Ltd | スパッタ装置 |
JP2000028465A (ja) * | 1998-07-06 | 2000-01-28 | Anelva Corp | 水晶真空計 |
JP2010163690A (ja) * | 2008-07-31 | 2010-07-29 | Canon Anelva Corp | プラズマ処理装置 |
WO2011067820A1 (ja) * | 2009-12-04 | 2011-06-09 | キヤノンアネルバ株式会社 | スパッタリング装置、及び電子デバイスの製造方法 |
Also Published As
Publication number | Publication date |
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SG11201700850QA (en) | 2017-03-30 |
WO2016021496A1 (ja) | 2016-02-11 |
KR20170041777A (ko) | 2017-04-17 |
US20170140907A1 (en) | 2017-05-18 |
US10062553B2 (en) | 2018-08-28 |
JPWO2016021496A1 (ja) | 2017-04-27 |
KR101939505B1 (ko) | 2019-01-16 |
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