JP6046243B2 - オプトエレクトロニクスデバイスおよびそのようなデバイスを有する装置 - Google Patents
オプトエレクトロニクスデバイスおよびそのようなデバイスを有する装置 Download PDFInfo
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- 230000005693 optoelectronics Effects 0.000 title claims description 65
- 230000005855 radiation Effects 0.000 claims description 88
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
- G01S7/4813—Housing arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/04—Systems determining the presence of a target
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/96—Touch switches
- H03K17/9627—Optical touch switches
- H03K17/9631—Optical touch switches using a light source as part of the switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/94—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated
- H03K2217/941—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated using an optical detector
- H03K2217/94102—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated using an optical detector characterised by the type of activation
- H03K2217/94108—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated using an optical detector characterised by the type of activation making use of reflection
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
- Electronic Switches (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
本特許出願は、独国特許出願第102012104910.6号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
Claims (16)
- 放射を生成する目的で設けられている第1の部品(21)と、放射を受光する目的で設けられている第2の部品(22)と、接続キャリア(4)と、フレーム(3)と、を備えたオプトエレクトロニクスデバイス(1)であって、
− 前記第1の部品および前記第2の部品が、前記接続キャリアの上に配置されており、
− 前記フレームが前記接続キャリアの上に配置されており、
− 前記第1の部品が、前記フレームの第1の開口部(31)の中に配置されており、前記第1の開口部は、前記第1の部品の周囲を完全に囲んでおり、
− 前記第2の部品が、前記フレームの第2の開口部(32)の中に配置されており、前記第2の開口部は、前記第2の部品の周囲を完全に囲んでおり、
− 前記第1の開口部および前記第2の開口部が、前記接続キャリアとは反対側に位置している前記フレームの主面(30)から、前記接続キャリアの方向に延びており、前記第1の開口部および前記第2の開口部は、前記フレームを完全に貫いており、
− 前記主面が、前記第1の開口部と前記第2の開口部との間に中間領域(5)を有し、前記中間領域において、前記主面に入射する放射の反射が低減され、
− 前記中間領域(5)が、
(i)前記接続キャリアの主延在面に垂直に延びる方向に、完全に、または部分的に、前記フレームを貫いている少なくとも1つの凹部(51)を有する構造化部(50)、および、
(ii)前記接続キャリアに対して斜めに延在している前記主面の表面領域(54)を有する、
オプトエレクトロニクスデバイス(1)。 - 少なくとも1つの凹部(51)を有する構造化部(50)が、前記中間領域に形成されている、
請求項1に記載のデバイス。 - 前記少なくとも1つの凹部は、前記接続キャリアの主延在面に垂直に延びる方向に、完全に前記フレームを貫いている、
請求項2に記載のデバイス。 - 前記構造化部が複数の凹部を有し、2つの隣接する凹部の間に、前記フレームのウェブ形状の凸部(52)が形成されている、
請求項2または3に記載のデバイス。 - 前記ウェブ形状の凸部が、前記主面の方向において前記接続キャリアから見て前記第1の部品の方に傾いている、
請求項4に記載のデバイス。 - 前記ウェブ形状の凸部が、前記接続キャリアから前記主面の方向に次第に細くなっている、
請求項4または請求項5に記載のデバイス。 - 前記凹部の間に複数のウェブ形状の凸部(52)が形成されており、前記主面の平面視において、ウェブ形状の凸部の曲率半径が、前記第1の部品からさらに離れているウェブ形状の凸部の曲率半径より小さい、
請求項4から請求項6のいずれかに記載のデバイス。 - 前記中間領域が、前記接続キャリアに対して斜めに延在している前記主面の表面領域(54)を有する、
請求項1から請求項7のいずれかに記載のデバイス。 - 前記中間領域が、前記第1の部品と前記第2の部品との間の結合線(71)に平行または実質的に平行に延びている稜線(53)を有し、前記表面領域が、前記稜線に垂直に延びる横断方向において前記接続キャリアに対して斜めに延在している、
請求項8に記載のデバイス。 - 前記稜線の両側において、前記中間領域と前記接続キャリアとの間の距離が、前記稜線からの距離が増すにつれて減少する、
請求項9に記載のデバイス。 - 前記オプトエレクトロニクスデバイスが近接センサとして具体化されている、
請求項1から請求項10のいずれかに記載のデバイス。 - 前記オプトエレクトロニクスデバイスが表面実装デバイスとして具体化されている、
請求項1から請求項11のいずれかに記載のデバイス。 - 前記デバイスが、放射窓(100)を有する装置(10)において動作するように設けられており、前記第2の部品が、前記第1の部品によって放出されて前記放射窓を透過し被測定体(75)において反射された放射を受光する目的で設けられている、
請求項1に記載のデバイス。 - 前記中間領域が、
前記第1の部品によって放出されて前記放射窓において反射された放射が、前記中間領域に最初に入射した時点で、その大部分が前記第1の部品の方に向きが変化するように形成されている構造化部、
を有する、
請求項13に記載のデバイス。 - 前記中間領域が、
前記第1の部品によって放出されて前記放射窓において反射された放射が、前記中間領域に最初に入射した時点で、その大部分が、前記第1の部品と前記第2の部品との間の結合線を通りかつ前記接続キャリアに垂直な平面、から離れる方向に導かれるように形成されている構造化部、
を有する、
請求項13に記載のデバイス。 - 放射窓(100)と、請求項1から請求項12のいずれかに記載のデバイス(1)とを備えた装置(10)であって、
前記第2の部品が、前記第1の部品によって放出されて前記放射窓を透過し被測定体において反射された放射を受光する目的で設けられている、
装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012104910.6 | 2012-06-06 | ||
DE102012104910.6A DE102012104910B4 (de) | 2012-06-06 | 2012-06-06 | Optoelektronische Vorrichtung und Apparatur mit einer solchen Vorrichtung |
PCT/EP2013/058643 WO2013182351A1 (de) | 2012-06-06 | 2013-04-25 | Optoelektronische vorrichtung und apparatur mit einer solchen vorrichtung |
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JP2015525478A JP2015525478A (ja) | 2015-09-03 |
JP6046243B2 true JP6046243B2 (ja) | 2016-12-14 |
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Country Status (5)
Country | Link |
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US (1) | US9519051B2 (ja) |
JP (1) | JP6046243B2 (ja) |
CN (1) | CN104380604B (ja) |
DE (1) | DE102012104910B4 (ja) |
WO (1) | WO2013182351A1 (ja) |
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CH709341A1 (de) * | 2014-03-07 | 2015-09-15 | Elesta Gmbh | Vorrichtung und Verfahren zur Erfassung von Objekten in einem Überwachungsbereich. |
EP3214763B1 (de) * | 2016-03-01 | 2023-09-06 | Aptiv Technologies Limited | Betätigungsplatte mit symbolbeleuchtung für einen sensorschaltknopf |
CN107135290A (zh) * | 2017-05-17 | 2017-09-05 | 广东欧珀移动通信有限公司 | 一种传感器组件、盖板组件、显示器组件以及终端 |
EP3470872B1 (en) * | 2017-10-11 | 2021-09-08 | Melexis Technologies NV | Sensor device |
JP7365124B2 (ja) * | 2019-02-12 | 2023-10-19 | ローム株式会社 | 近接センサおよびこれを用いた電子機器 |
WO2021100261A1 (ja) * | 2019-11-18 | 2021-05-27 | 株式会社村田製作所 | 光学センサ |
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JP3135194B2 (ja) * | 1994-09-16 | 2001-02-13 | キヤノン株式会社 | 測距装置及び測距装置の保護カバー |
JPH09148620A (ja) * | 1995-09-20 | 1997-06-06 | Sharp Corp | 光反射型検出器及びその製造方法 |
DE10214121C1 (de) | 2002-03-28 | 2003-12-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit mehreren Halbleiterchips |
US7385178B2 (en) * | 2005-10-26 | 2008-06-10 | Avago Technologies Ecbu Ip Pte Ltd | Reflective encoders with various emitter-detector configurations |
JP2007201170A (ja) * | 2006-01-26 | 2007-08-09 | Sharp Corp | 移動物体検出フォトインタラプタ、及びそれを用いた電子機器 |
DE102007039291A1 (de) | 2007-08-20 | 2009-02-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen |
DE102008029467A1 (de) * | 2008-06-20 | 2009-12-24 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement, Verwendung eines Halbleiterbauelements als Näherungssensor sowie Verfahren zum Detektieren von Objekten |
TWM363080U (en) | 2009-01-21 | 2009-08-11 | Pixart Imaging Inc | Packaging structure |
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JP2011049473A (ja) | 2009-08-28 | 2011-03-10 | Sharp Corp | 光検出装置および電子機器 |
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WO2012098981A1 (ja) * | 2011-01-20 | 2012-07-26 | ローム株式会社 | 光学装置 |
DE102012107794B4 (de) * | 2012-08-23 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Vorrichtung |
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- 2012-06-06 DE DE102012104910.6A patent/DE102012104910B4/de active Active
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- 2013-04-25 CN CN201380030105.5A patent/CN104380604B/zh active Active
- 2013-04-25 US US14/405,750 patent/US9519051B2/en active Active
- 2013-04-25 WO PCT/EP2013/058643 patent/WO2013182351A1/de active Application Filing
- 2013-04-25 JP JP2015515436A patent/JP6046243B2/ja active Active
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JP2015525478A (ja) | 2015-09-03 |
WO2013182351A1 (de) | 2013-12-12 |
US20150177366A1 (en) | 2015-06-25 |
DE102012104910A1 (de) | 2013-12-12 |
CN104380604B (zh) | 2017-03-08 |
US9519051B2 (en) | 2016-12-13 |
DE102012104910B4 (de) | 2022-12-29 |
CN104380604A (zh) | 2015-02-25 |
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