JP6038301B2 - レーザービーム光源とレーザービームを操作するためのビーム案内装置とを備えたｅｕｖ励起光源 - Google Patents

レーザービーム光源とレーザービームを操作するためのビーム案内装置とを備えたｅｕｖ励起光源 Download PDF

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Publication number
JP6038301B2
JP6038301B2 JP2015516546A JP2015516546A JP6038301B2 JP 6038301 B2 JP6038301 B2 JP 6038301B2 JP 2015516546 A JP2015516546 A JP 2015516546A JP 2015516546 A JP2015516546 A JP 2015516546A JP 6038301 B2 JP6038301 B2 JP 6038301B2
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Prior art keywords
laser beam
light source
excitation light
mirror
euv
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Japanese (ja)
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JP2015521781A (ja
Inventor
ランベアト マーティン
ランベアト マーティン
シュルツ ヨアヒム
シュルツ ヨアヒム
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Trumpf Lasersystems for Semiconductor Manufacturing GmbH
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Trumpf Lasersystems for Semiconductor Manufacturing GmbH
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/04—Irradiation devices with beam-forming means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multi-focusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multi-focusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K5/00—Measuring temperature based on the expansion or contraction of a material
    • G01K5/02—Measuring temperature based on the expansion or contraction of a material the material being a liquid
    • G01K5/04—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383—Parallel arrangements
    • H01S3/2391—Parallel arrangements emitting at different wavelengths

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Lasers (AREA)
  • X-Ray Techniques (AREA)
JP2015516546A 2012-06-12 2013-05-29 レーザービーム光源とレーザービームを操作するためのビーム案内装置とを備えたｅｕｖ励起光源 Active JP6038301B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012209837.2 2012-06-12
DE201210209837 DE102012209837A1 (de) 2012-06-12 2012-06-12 EUV-Anregungslichtquelle mit einer Laserstrahlquelle und einer Strahlführungsvorrichtung zum Manipulieren des Laserstrahls
PCT/EP2013/061056 WO2013186052A1 (de) 2012-06-12 2013-05-29 Euv-anregungslichtquelle mit einer laserstrahlquelle und einer strahlführungsvorrichtung zum manipulieren des laserstrahls

Publications (2)

Publication Number Publication Date
JP2015521781A JP2015521781A (ja) 2015-07-30
JP6038301B2 true JP6038301B2 (ja) 2016-12-07

Family

ID=48576393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015516546A Active JP6038301B2 (ja) 2012-06-12 2013-05-29 レーザービーム光源とレーザービームを操作するためのビーム案内装置とを備えたｅｕｖ励起光源

Country Status (8)

Country Link
US (1) US9129717B2 (de)
EP (1) EP2859783B1 (de)
JP (1) JP6038301B2 (de)
KR (1) KR101634030B1 (de)
CN (1) CN104472019B (de)
DE (1) DE102012209837A1 (de)
TW (1) TWI605731B (de)
WO (1) WO2013186052A1 (de)

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US8872143B2 (en) * 2013-03-14 2014-10-28 Asml Netherlands B.V. Target for laser produced plasma extreme ultraviolet light source
US9338870B2 (en) * 2013-12-30 2016-05-10 Asml Netherlands B.V. Extreme ultraviolet light source
US9357625B2 (en) 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
WO2016038657A1 (ja) * 2014-09-08 2016-03-17 ギガフォトン株式会社 パルスレーザ光を極端紫外光チャンバに伝送する伝送システム及びレーザシステム
CN105511231B (zh) * 2014-10-16 2019-03-29 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置
US9832855B2 (en) * 2015-10-01 2017-11-28 Asml Netherlands B.V. Optical isolation module
DE102015103127A1 (de) * 2015-03-04 2016-09-08 Trumpf Laser- Und Systemtechnik Gmbh Bestrahlungssystem für eine Vorrichtung zur generativen Fertigung
NL2025013A (en) * 2019-03-07 2020-09-11 Asml Netherlands Bv Laser system for source material conditioning in an euv light source
CN114008873B (zh) 2019-06-20 2024-05-24 西默有限公司 输出光束形成设备
KR102901435B1 (ko) 2020-06-09 2025-12-18 삼성전자주식회사 반도체 제조 장치 및 그의 동작 방법
WO2022237952A1 (en) 2021-05-10 2022-11-17 Trumpf Lasersystems For Semiconductor Manufacturing Gmbh Euv excitation light source and euv light source
DE102022100591B9 (de) * 2022-01-12 2023-10-26 Carl Zeiss Smt Gmbh Optisches System, insbesondere zur Charakterisierung einer Maske für die Mikrolithographie, und Strahlteiler zur Verwendung in einem solchen optischen System
DE102022120482A1 (de) * 2022-08-12 2024-02-15 Trumpf Laser Gmbh Anordnung zum Laserschutz
DE102023135197A1 (de) * 2023-12-14 2025-06-18 TRUMPF Laser SE DWM in SSL zur Parallelisierung

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JPH08213192A (ja) * 1995-02-02 1996-08-20 Nippon Telegr & Teleph Corp <Ntt> Ｘ線発生装置およびその発生方法
JPH10221499A (ja) * 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
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Also Published As

Publication number Publication date
EP2859783B1 (de) 2017-05-17
KR20150018566A (ko) 2015-02-23
US20130327963A1 (en) 2013-12-12
JP2015521781A (ja) 2015-07-30
WO2013186052A1 (de) 2013-12-19
CN104472019A (zh) 2015-03-25
US9129717B2 (en) 2015-09-08
TW201352074A (zh) 2013-12-16
EP2859783A1 (de) 2015-04-15
TWI605731B (zh) 2017-11-11
KR101634030B1 (ko) 2016-06-27
DE102012209837A1 (de) 2013-12-12
CN104472019B (zh) 2017-02-22

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