JP6032601B2 - 半導体光増幅器の制御方法及び測定方法、並びに半導体光増幅装置 - Google Patents

半導体光増幅器の制御方法及び測定方法、並びに半導体光増幅装置 Download PDF

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JP6032601B2
JP6032601B2 JP2012258344A JP2012258344A JP6032601B2 JP 6032601 B2 JP6032601 B2 JP 6032601B2 JP 2012258344 A JP2012258344 A JP 2012258344A JP 2012258344 A JP2012258344 A JP 2012258344A JP 6032601 B2 JP6032601 B2 JP 6032601B2
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optical amplifier
output intensity
semiconductor optical
light output
region
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JP2013149949A5 (https=
JP2013149949A (ja
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良太 寺西
良太 寺西
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2012258344A priority Critical patent/JP6032601B2/ja
Priority to US13/724,634 priority patent/US9019594B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4006—Injection locking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06812—Stabilisation of laser output parameters by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5063—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2012258344A 2011-12-21 2012-11-27 半導体光増幅器の制御方法及び測定方法、並びに半導体光増幅装置 Active JP6032601B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012258344A JP6032601B2 (ja) 2011-12-21 2012-11-27 半導体光増幅器の制御方法及び測定方法、並びに半導体光増幅装置
US13/724,634 US9019594B2 (en) 2011-12-21 2012-12-21 Control method and measuring method of semiconductor optical amplifier, and semiconductor optical amplifier device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011280145 2011-12-21
JP2011280145 2011-12-21
JP2012258344A JP6032601B2 (ja) 2011-12-21 2012-11-27 半導体光増幅器の制御方法及び測定方法、並びに半導体光増幅装置

Publications (3)

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JP2013149949A JP2013149949A (ja) 2013-08-01
JP2013149949A5 JP2013149949A5 (https=) 2016-01-21
JP6032601B2 true JP6032601B2 (ja) 2016-11-30

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JP (1) JP6032601B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106921439A (zh) * 2015-12-25 2017-07-04 青岛海信宽带多媒体技术有限公司 一种光模块
JP2018046210A (ja) * 2016-09-15 2018-03-22 住友電工デバイス・イノベーション株式会社 光半導体装置及び光半導体装置の制御方法
JP6866976B2 (ja) 2016-10-27 2021-04-28 住友電工デバイス・イノベーション株式会社 半導体レーザ装置の動作条件決定方法
JP6789904B2 (ja) * 2017-09-20 2020-11-25 株式会社東芝 ダイナミックレンジ圧縮装置及び画像処理装置
US11906874B1 (en) * 2023-04-07 2024-02-20 Intraaction Corp Acousto-optic deflector and methods of fabrication

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US4344173A (en) * 1978-09-25 1982-08-10 Northern Telecom Limited Stabilization circuit for a digitally operated laser
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US5027362A (en) * 1988-12-29 1991-06-25 At&T Bell Laboratories Laser control method and circuitry
US5023878A (en) * 1989-09-15 1991-06-11 At&T Bell Laboratories Apparatus comprising a quantum well device and method of operating the apparatus
JPH0563179A (ja) * 1991-08-30 1993-03-12 Hitachi Ltd 光集積回路及びその製造方法
US5673140A (en) * 1992-09-08 1997-09-30 British Telecommunications Public Limited Company Non-linear semiconductor optical device
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JPH11183857A (ja) * 1997-12-24 1999-07-09 Nippon Telegr & Teleph Corp <Ntt> 光周波数チャープ制御回路及びこれを用いた光強度変調回路
US6310720B1 (en) * 2000-06-02 2001-10-30 Genoa Corporation Polarization insensitive semiconductor optical amplifier
JP4961634B2 (ja) * 2000-07-07 2012-06-27 Ｋｄｄｉ株式会社 光ゲート装置
US6462865B1 (en) * 2001-06-29 2002-10-08 Super Light Wave Corp. All-optical logic with wired-OR multi-mode-interference combiners and semiconductor-optical-amplifier inverters
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US20130170019A1 (en) 2013-07-04
US9019594B2 (en) 2015-04-28

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