JP6031765B2 - 半導体装置、電子機器、及び、半導体装置の製造方法 - Google Patents

半導体装置、電子機器、及び、半導体装置の製造方法 Download PDF

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Publication number
JP6031765B2
JP6031765B2 JP2012006356A JP2012006356A JP6031765B2 JP 6031765 B2 JP6031765 B2 JP 6031765B2 JP 2012006356 A JP2012006356 A JP 2012006356A JP 2012006356 A JP2012006356 A JP 2012006356A JP 6031765 B2 JP6031765 B2 JP 6031765B2
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Prior art keywords
film
semiconductor
interface
bonding
semiconductor device
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JP2012006356A
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JP2013033900A (ja
JP2013033900A5 (enrdf_load_stackoverflow
Inventor
恵永 香川
恵永 香川
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012006356A priority Critical patent/JP6031765B2/ja
Priority to TW101121190A priority patent/TWI495041B/zh
Priority to US13/533,526 priority patent/US8896125B2/en
Priority to KR1020120069684A priority patent/KR102030852B1/ko
Priority to CN201210233277.XA priority patent/CN102867847B/zh
Publication of JP2013033900A publication Critical patent/JP2013033900A/ja
Priority to US14/467,852 priority patent/US9111763B2/en
Publication of JP2013033900A5 publication Critical patent/JP2013033900A5/ja
Priority to US14/718,942 priority patent/US9443802B2/en
Priority to US15/228,860 priority patent/US10038024B2/en
Priority to US15/228,894 priority patent/US9911778B2/en
Application granted granted Critical
Publication of JP6031765B2 publication Critical patent/JP6031765B2/ja
Priority to US15/992,908 priority patent/US10431621B2/en
Priority to US16/410,877 priority patent/US10985102B2/en
Priority to KR1020190069266A priority patent/KR20190071647A/ko
Priority to KR1020200069977A priority patent/KR102298787B1/ko
Priority to US17/194,641 priority patent/US11569123B2/en
Priority to KR1020210112763A priority patent/KR102439964B1/ko
Priority to KR1020220109225A priority patent/KR102673911B1/ko
Priority to KR1020240073260A priority patent/KR20240085908A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05547—Structure comprising a core and a coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/0805—Shape
    • H01L2224/08057—Shape in side view
    • H01L2224/08058—Shape in side view being non uniform along the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/0805—Shape
    • H01L2224/0807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08121—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the connected bonding areas being not aligned with respect to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/085—Material
    • H01L2224/08501—Material at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/8034—Bonding interfaces of the bonding area
    • H01L2224/80345—Shape, e.g. interlocking features

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012006356A 2011-07-05 2012-01-16 半導体装置、電子機器、及び、半導体装置の製造方法 Active JP6031765B2 (ja)

Priority Applications (17)

Application Number Priority Date Filing Date Title
JP2012006356A JP6031765B2 (ja) 2011-07-05 2012-01-16 半導体装置、電子機器、及び、半導体装置の製造方法
TW101121190A TWI495041B (zh) 2011-07-05 2012-06-13 半導體裝置、用於半導體裝置之製造方法及電子設備
US13/533,526 US8896125B2 (en) 2011-07-05 2012-06-26 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020120069684A KR102030852B1 (ko) 2011-07-05 2012-06-28 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
CN201210233277.XA CN102867847B (zh) 2011-07-05 2012-07-05 半导体器件、半导体器件制造方法及电子装置
US14/467,852 US9111763B2 (en) 2011-07-05 2014-08-25 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US14/718,942 US9443802B2 (en) 2011-07-05 2015-05-21 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/228,860 US10038024B2 (en) 2011-07-05 2016-08-04 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/228,894 US9911778B2 (en) 2011-07-05 2016-08-04 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/992,908 US10431621B2 (en) 2011-07-05 2018-05-30 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US16/410,877 US10985102B2 (en) 2011-07-05 2019-05-13 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020190069266A KR20190071647A (ko) 2011-07-05 2019-06-12 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
KR1020200069977A KR102298787B1 (ko) 2011-07-05 2020-06-10 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
US17/194,641 US11569123B2 (en) 2011-07-05 2021-03-08 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020210112763A KR102439964B1 (ko) 2011-07-05 2021-08-26 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
KR1020220109225A KR102673911B1 (ko) 2011-07-05 2022-08-30 반도체 장치, 반도체 장치의 제조 방법 및 전자 장치
KR1020240073260A KR20240085908A (ko) 2011-07-05 2024-06-04 반도체 장치, 반도체 장치의 제조 방법 및 전자 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011148883 2011-07-05
JP2011148883 2011-07-05
JP2012006356A JP6031765B2 (ja) 2011-07-05 2012-01-16 半導体装置、電子機器、及び、半導体装置の製造方法

Publications (3)

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JP2013033900A JP2013033900A (ja) 2013-02-14
JP2013033900A5 JP2013033900A5 (enrdf_load_stackoverflow) 2015-03-05
JP6031765B2 true JP6031765B2 (ja) 2016-11-24

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US11355441B2 (en) 2018-03-20 2022-06-07 Kabushiki Kaisha Toshiba Semiconductor device

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JP2014099582A (ja) 2012-10-18 2014-05-29 Sony Corp 固体撮像装置
JP2015079901A (ja) * 2013-10-18 2015-04-23 株式会社東芝 半導体装置及び半導体装置の製造方法
JP6335099B2 (ja) * 2014-11-04 2018-05-30 東芝メモリ株式会社 半導体装置および半導体装置の製造方法
CN107615481B (zh) * 2015-05-18 2020-07-21 索尼公司 半导体装置和成像装置
JP2016219660A (ja) 2015-05-22 2016-12-22 ソニー株式会社 半導体装置、製造方法、固体撮像素子、および電子機器
KR102505856B1 (ko) * 2016-06-09 2023-03-03 삼성전자 주식회사 웨이퍼 대 웨이퍼 접합 구조체
US10840205B2 (en) 2017-09-24 2020-11-17 Invensas Bonding Technologies, Inc. Chemical mechanical polishing for hybrid bonding
JP7293323B2 (ja) * 2017-09-29 2023-06-19 キヤノン株式会社 半導体装置および機器
JP2019110260A (ja) 2017-12-20 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及びその製造方法
JP2019160866A (ja) * 2018-03-08 2019-09-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7046678B2 (ja) 2018-03-30 2022-04-04 キヤノン株式会社 半導体装置、機器
US11056348B2 (en) 2018-04-05 2021-07-06 Invensas Bonding Technologies, Inc. Bonding surfaces for microelectronics
US11393779B2 (en) 2018-06-13 2022-07-19 Invensas Bonding Technologies, Inc. Large metal pads over TSV
CN112585740B (zh) 2018-06-13 2025-05-13 隔热半导体粘合技术公司 作为焊盘的tsv
US11011494B2 (en) 2018-08-31 2021-05-18 Invensas Bonding Technologies, Inc. Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
WO2020071103A1 (ja) * 2018-10-05 2020-04-09 ソニーセミコンダクタソリューションズ株式会社 半導体装置およびその製造方法、撮像素子
US11158573B2 (en) 2018-10-22 2021-10-26 Invensas Bonding Technologies, Inc. Interconnect structures
JP2020096225A (ja) * 2018-12-10 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
CN111344835B (zh) * 2020-02-17 2021-03-12 长江存储科技有限责任公司 混合晶圆键合方法及其结构
US11264357B1 (en) 2020-10-20 2022-03-01 Invensas Corporation Mixed exposure for large die
JP2022082187A (ja) * 2020-11-20 2022-06-01 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
JP7652560B2 (ja) * 2020-12-16 2025-03-27 キオクシア株式会社 半導体記憶装置、半導体装置およびその製造方法
KR20230125311A (ko) 2020-12-28 2023-08-29 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 기판-관통 비아를 가지는 구조체 및 이를 형성하기위한 방법
JP7652586B2 (ja) * 2021-02-25 2025-03-27 キオクシア株式会社 半導体装置およびその製造方法
DE112022004086T5 (de) * 2021-08-24 2024-05-29 Sony Semiconductor Solutions Corporation Lichtdetektionsvorrichtung und elektronische einrichtung

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JP2010129693A (ja) * 2008-11-26 2010-06-10 Fujitsu Microelectronics Ltd 半導体装置及びその製造方法
JP5304536B2 (ja) * 2009-08-24 2013-10-02 ソニー株式会社 半導体装置
JP5407660B2 (ja) * 2009-08-26 2014-02-05 ソニー株式会社 半導体装置の製造方法
JP2011054637A (ja) * 2009-08-31 2011-03-17 Sony Corp 半導体装置およびその製造方法

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Publication number Priority date Publication date Assignee Title
US11355441B2 (en) 2018-03-20 2022-06-07 Kabushiki Kaisha Toshiba Semiconductor device

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