JP6031252B2 - 半導体装置、記憶装置および半導体装置の作製方法 - Google Patents

半導体装置、記憶装置および半導体装置の作製方法 Download PDF

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Publication number
JP6031252B2
JP6031252B2 JP2012104552A JP2012104552A JP6031252B2 JP 6031252 B2 JP6031252 B2 JP 6031252B2 JP 2012104552 A JP2012104552 A JP 2012104552A JP 2012104552 A JP2012104552 A JP 2012104552A JP 6031252 B2 JP6031252 B2 JP 6031252B2
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electrode
oxide semiconductor
film
semiconductor layer
insulating layer
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JP2012253327A5 (enExample
JP2012253327A (ja
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坂田　淳一郎
淳一郎 坂田
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
JP2012104552A 2011-05-06 2012-05-01 半導体装置、記憶装置および半導体装置の作製方法 Expired - Fee Related JP6031252B2 (ja)

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JP2012104552A JP6031252B2 (ja) 2011-05-06 2012-05-01 半導体装置、記憶装置および半導体装置の作製方法

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JP2011103766 2011-05-06
JP2011103766 2011-05-06
JP2012104552A JP6031252B2 (ja) 2011-05-06 2012-05-01 半導体装置、記憶装置および半導体装置の作製方法

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JP2012253327A JP2012253327A (ja) 2012-12-20
JP2012253327A5 JP2012253327A5 (enExample) 2015-05-28
JP6031252B2 true JP6031252B2 (ja) 2016-11-24

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JP (1) JP6031252B2 (enExample)

Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
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US8809928B2 (en) 2014-08-19
JP2012253327A (ja) 2012-12-20

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