JP2012253327A - 半導体装置、記憶装置および半導体装置の作製方法 - Google Patents
半導体装置、記憶装置および半導体装置の作製方法 Download PDFInfo
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- JP2012253327A JP2012253327A JP2012104552A JP2012104552A JP2012253327A JP 2012253327 A JP2012253327 A JP 2012253327A JP 2012104552 A JP2012104552 A JP 2012104552A JP 2012104552 A JP2012104552 A JP 2012104552A JP 2012253327 A JP2012253327 A JP 2012253327A
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- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
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- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
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- 239000010980 sapphire Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Abstract
【解決手段】半導体装置の有するトランジスタの半導体層として酸化物半導体を用いることで、ソースとドレイン間のリーク電流を低減できるため、半導体装置および当該半導体装置を備える記憶装置の消費電力低減、保持特性の改善を達成できる。また、トランジスタのドレイン電極、半導体層およびドレイン電極と重なる第1の電極により容量素子を形成し、容量素子と重なる位置でゲート電極を上層へ取り出す構造とした。これにより、半導体装置および当該半導体装置を備える記憶装置を小型化できる。
【選択図】図1
Description
本実施の形態では、本発明の一態様に係る半導体装置の構造を図1に示すと共に、当該半導体装置の作製方法について、図2および図3を用いて説明する。
図1は、本実施の形態の方法にて作製された半導体装置150の構成例であり、図1(A)は半導体装置150の上面図、図1(B)は図1(A)の一点鎖線部A1−A2の断面図、図1(C)は図1(A)の一点鎖線B1−B2の断面図である。なお、図1(A)の上面図については、構造を分かり易くするため、ゲート絶縁層106および層間絶縁層112を省略して記載している。
本実施の形態に記載する半導体装置150の作製方法について、図2から図4を用いて以下の文章にて説明する。
本実施の形態では、実施の形態1にて記載した構造とは異なる構造の半導体装置について、その構造および作製方法の一態様を図5および図6を用いて説明する。
図5は、本実施の形態の方法にて作製された半導体装置550の構成例であり、図5(A)は半導体装置550の上面図、図5(B)は図5(A)の一点鎖線部D1−D2の断面図、図5(C)は図5(A)の一点鎖線E1−E2の断面図である。なお、図5(A)の上面図については、構造を分かり易くするため、ゲート絶縁層106および層間絶縁層112を省略して記載している。
本実施の形態に記載する半導体装置550の作製方法について、図6を用いて以下の文章にて説明する。
本実施の形態では、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置とも言える。)として、上述実施の形態に示す半導体装置を使用した場合の一例を、図7を用いて説明する。なお、本実施の形態では、記憶装置に、実施の形態1に記載した半導体装置150を用いているが、勿論、実施の形態2に記載の半導体装置550を用いてもよい。
本実施の形態では、実施の形態3に示す半導体装置を用いた応用例の一例として、記憶媒体(メモリ素子)について、図9を用いて説明する。なお、本実施の形態の記憶媒体の説明では、トランジスタ120をトランジスタ520に、容量素子130を容量素子530に、半導体装置150を半導体装置550に置き換えてもよい。
本実施の形態では、上述実施の形態にて説明した記憶装置を少なくとも一部に用いたCPU(Central Processing Unit)ついて、図10を用いて説明する。
本実施の形態では、先の実施の形態で説明した記憶装置を電子機器に適用する場合について、図11を用いて説明する。本実施の形態では、コンピュータ、携帯情報端末(携帯電話、携帯型ゲーム機、音響再生装置なども含む)、電子ペーパー、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、デジタルビデオカメラなどの電子機器に、上述の半導体装置を適用する場合について説明する。
102a ソース電極
102b ドレイン電極
104 酸化物半導体層
106 ゲート絶縁層
108 ゲート電極
110 第1の電極
112 層間絶縁層
113 開口部
114 配線
120 トランジスタ
130 容量素子
140 領域
150 半導体装置
402 導電層
410 溝部
420 トランジスタ
430 容量素子
514 被形成面
520 トランジスタ
530 容量素子
550 半導体装置
600 酸化物半導体膜
602a 領域
602b 領域
800 メモリセルアレイ
1141 スイッチング素子
1142 記憶素子
1143 記憶素子群
1189 ROMインターフェース
1190 基板
1191 演算回路
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1301 筐体
1302 筐体
1303a 第1の表示部
1303b 第2の表示部
1304 選択ボタン
1305 キーボード
1311 筐体
1312 筐体
1313 表示部
1314 表示部
1315 軸部
1316 電源
1317 操作キー
1318 スピーカー
1320 テレビジョン装置
1321 筐体
1322 表示部
1323 スタンド
1324 リモコン操作機
1331 本体
1332 操作スイッチ
1333 バッテリー
1851 メモリセルアレイ
1851a メモリセルアレイ
1851b メモリセルアレイ
1853 周辺回路
Claims (20)
- 絶縁表面上のソース電極およびドレイン電極と、
前記ソース電極および前記ドレイン電極上の酸化物半導体層と、
前記酸化物半導体を介して、前記ソース電極または前記ドレイン電極の一方と重なる第1の電極と、
前記酸化物半導体層および前記第1の電極に接するゲート絶縁層と、
前記第1の電極と重なるように、前記ゲート絶縁層上のゲート電極と、
を有する半導体装置。 - 前記第1の電極が定電位または接地電位に接続された、請求項1に記載の半導体装置。
- 前記酸化物半導体層が、In、Ga、Sn及びZnから選ばれた一種以上の元素を含んでなる酸化物半導体材料を有する、請求項1に記載の半導体装置。
- 請求項1に記載の半導体装置を有する記憶装置。
- 請求項1において、
さらに、前記ゲート電極およびゲート絶縁層上に層間絶縁層を有し、
前記第1の電極に重なるように、前記層間絶縁層の中にコンタクトホールが形成されている、半導体装置。 - 前記第1の電極が定電位または接地電位に接続された、請求項5に記載の半導体装置。
- 前記酸化物半導体層が、In、Ga、Sn及びZnから選ばれた一種以上の元素を含んでなる酸化物半導体材料を有する、請求項5に記載の半導体装置。
- 請求項5に記載の半導体装置を有する記憶装置。
- 請求項1において、
さらに、前記ゲート電極およびゲート絶縁層上に層間絶縁層を有し、
前記ゲート電極の少なくとも一部が前記層間絶縁層の表面で曝されており、
前記ゲート電極の一部は前記第1の電極と重なる、半導体装置。 - 前記第1の電極が定電位または接地電位に接続された、請求項9に記載の半導体装置。
- 前記酸化物半導体層が、In、Ga、Sn及びZnから選ばれた一種以上の元素を含んでなる酸化物半導体材料を有する、請求項9に記載の半導体装置。
- 請求項9に記載の半導体装置を有する記憶装置。
- 絶縁表面上にソース電極およびドレイン電極を形成し、
前記ソース電極および前記ドレイン電極上に酸化物半導体層を形成し、
前記酸化物半導体を介して、前記ソース電極または前記ドレイン電極の一方と重なる第1の電極を形成し、
前記酸化物半導体層および前記第1の電極に接するゲート絶縁層を形成し、
前記第1の電極と重なるように、前記ゲート絶縁層上に、ゲート電極を形成し、
前記ゲート絶縁層および前記ゲート電極上に層間絶縁層を形成し、
前記第1の電極と重なるように前記層間絶縁膜の中にコンタクトホールを形成する、半導体装置の作製方法。 - 絶縁表面上にソース電極およびドレイン電極を形成し、
前記ソース電極および前記ドレイン電極上に酸化物半導体層を形成し、
前記酸化物半導体を介して、前記ソース電極または前記ドレイン電極の一方と重なる第1の電極を形成し、
前記酸化物半導体層および前記第1の電極に接するゲート絶縁層を形成し、
前記第1の電極と重なるように、前記ゲート絶縁層上に、ゲート電極を形成し、
前記ゲート絶縁層および前記ゲート電極上に層間絶縁層を形成し、
前記層間絶縁層の表面に平坦化処理を行う、半導体装置の作製方法。 - 平坦化処理は化学機械的研磨によって行うことを特徴とする、請求項14に記載の半導体装置の作製方法。
- 前記ゲート電極の少なくとも一部が前記層間絶縁層の表面で曝されるように前記平坦化処理を行い、前記ゲート電極の一部が前記第一電極と重なることを特徴とする、請求項14に記載の半導体装置の作製方法。
- 絶縁表面上のゲート電極と、
前記ゲート電極に隣接するゲート絶縁層と、
前記ゲート絶縁層を介して隣接する酸化物半導体層と、
前記酸化物層に接するソースドレイン電極およびドレイン電極と、
前記ゲート絶縁層と前記酸化物半導体層との間に第1の電極と、を有し、
前記第1の電極は前記ソース電極及び前記ドレイン電極の一方と重なることを特徴とする半導体装置。 - 前記第1の電極が定電位または接地電位に接続された、請求項17に記載の半導体装置。
- 前記酸化物半導体層が、In、Ga、Sn及びZnから選ばれた一種以上の元素を含んでなる酸化物半導体材料を有する、請求項17に記載の半導体装置。
- 請求項17に記載の半導体装置を有する記憶装置。
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JP2018060995A (ja) * | 2016-02-18 | 2018-04-12 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法、表示装置、並びに電子機器、 |
WO2018143073A1 (ja) * | 2017-02-01 | 2018-08-09 | 出光興産株式会社 | 結晶質酸化物半導体薄膜、積層体の製造方法、薄膜トランジスタ、薄膜トランジスタの製造方法、電子機器、車載用表示装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6110075B2 (ja) | 2011-05-13 | 2017-04-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
US9553200B2 (en) | 2012-02-29 | 2017-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2013183001A (ja) | 2012-03-01 | 2013-09-12 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
WO2013168687A1 (en) | 2012-05-10 | 2013-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6285150B2 (ja) * | 2012-11-16 | 2018-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102248765B1 (ko) * | 2012-11-30 | 2021-05-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2015108731A (ja) * | 2013-12-05 | 2015-06-11 | ソニー株式会社 | 半導体装置およびその製造方法、並びに表示装置および電子機器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006060209A (ja) * | 2004-08-20 | 2006-03-02 | Sharp Corp | 半導電性金属酸化物薄膜の強誘電性メモリトランジスタ |
JP2006237586A (ja) * | 2005-01-28 | 2006-09-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、電子機器、半導体装置の作製方法 |
US20080128689A1 (en) * | 2006-11-29 | 2008-06-05 | Je-Hun Lee | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2010166030A (ja) * | 2008-12-19 | 2010-07-29 | Semiconductor Energy Lab Co Ltd | トランジスタの作製方法 |
Family Cites Families (95)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3171836D1 (en) | 1980-12-08 | 1985-09-19 | Toshiba Kk | Semiconductor memory device |
JP3298974B2 (ja) | 1993-03-23 | 2002-07-08 | 電子科学株式会社 | 昇温脱離ガス分析装置 |
EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
WO2003040441A1 (en) | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
CN1998087B (zh) | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
RU2399989C2 (ru) | 2004-11-10 | 2010-09-20 | Кэнон Кабусики Кайся | Аморфный оксид и полевой транзистор с его использованием |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7863611B2 (en) * | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
WO2006051994A2 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Light-emitting device |
US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI412138B (zh) | 2005-01-28 | 2013-10-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP2007073705A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
EP1995787A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method therof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
CN101577282A (zh) | 2005-11-15 | 2009-11-11 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
WO2008133345A1 (en) | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP5480554B2 (ja) * | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
US8367486B2 (en) * | 2009-02-05 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the transistor |
US20120178224A1 (en) * | 2011-01-12 | 2012-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
-
2012
- 2012-04-25 US US13/455,476 patent/US8809928B2/en not_active Expired - Fee Related
- 2012-05-01 JP JP2012104552A patent/JP6031252B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006060209A (ja) * | 2004-08-20 | 2006-03-02 | Sharp Corp | 半導電性金属酸化物薄膜の強誘電性メモリトランジスタ |
JP2006237586A (ja) * | 2005-01-28 | 2006-09-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、電子機器、半導体装置の作製方法 |
US20080128689A1 (en) * | 2006-11-29 | 2008-06-05 | Je-Hun Lee | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2010166030A (ja) * | 2008-12-19 | 2010-07-29 | Semiconductor Energy Lab Co Ltd | トランジスタの作製方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018060995A (ja) * | 2016-02-18 | 2018-04-12 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法、表示装置、並びに電子機器、 |
US10204798B2 (en) | 2016-02-18 | 2019-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, display device, and electronic device |
US10580662B2 (en) | 2016-02-18 | 2020-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, display device, and electronic device |
US10886143B2 (en) | 2016-02-18 | 2021-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, display device, and electronic device |
US11404285B2 (en) | 2016-02-18 | 2022-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, display device, and electronic device |
US11842901B2 (en) | 2016-02-18 | 2023-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, display device, and electronic device |
WO2018143073A1 (ja) * | 2017-02-01 | 2018-08-09 | 出光興産株式会社 | 結晶質酸化物半導体薄膜、積層体の製造方法、薄膜トランジスタ、薄膜トランジスタの製造方法、電子機器、車載用表示装置 |
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