JP6021922B2 - 半導体特性を有する化合物、ならびに関連する組成物およびデバイス - Google Patents

半導体特性を有する化合物、ならびに関連する組成物およびデバイス Download PDF

Info

Publication number
JP6021922B2
JP6021922B2 JP2014529956A JP2014529956A JP6021922B2 JP 6021922 B2 JP6021922 B2 JP 6021922B2 JP 2014529956 A JP2014529956 A JP 2014529956A JP 2014529956 A JP2014529956 A JP 2014529956A JP 6021922 B2 JP6021922 B2 JP 6021922B2
Authority
JP
Japan
Prior art keywords
dielectric material
compound
mmol
field effect
transistor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014529956A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014531435A5 (cg-RX-API-DMAC7.html
JP2014531435A (ja
Inventor
ハカン ウスタ，
ハカン ウスタ，
ダミアン ブディネ，
ダミアン ブディネ，
ジョーダン クイン，
ジョーダン クイン，
アントニオ ファチェッティ，
アントニオ ファチェッティ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Polyera Corp
Original Assignee
Polyera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Polyera Corp filed Critical Polyera Corp
Publication of JP2014531435A publication Critical patent/JP2014531435A/ja
Publication of JP2014531435A5 publication Critical patent/JP2014531435A5/ja
Application granted granted Critical
Publication of JP6021922B2 publication Critical patent/JP6021922B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
JP2014529956A 2011-09-12 2012-09-10 半導体特性を有する化合物、ならびに関連する組成物およびデバイス Expired - Fee Related JP6021922B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161533785P 2011-09-12 2011-09-12
US61/533,785 2011-09-12
PCT/US2012/054502 WO2013039842A1 (en) 2011-09-12 2012-09-10 Compounds having semiconducting properties and related compositions and devices

Publications (3)

Publication Number Publication Date
JP2014531435A JP2014531435A (ja) 2014-11-27
JP2014531435A5 JP2014531435A5 (cg-RX-API-DMAC7.html) 2015-10-08
JP6021922B2 true JP6021922B2 (ja) 2016-11-09

Family

ID=47116279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014529956A Expired - Fee Related JP6021922B2 (ja) 2011-09-12 2012-09-10 半導体特性を有する化合物、ならびに関連する組成物およびデバイス

Country Status (6)

Country Link
US (2) US20130062598A1 (cg-RX-API-DMAC7.html)
EP (1) EP2755978A1 (cg-RX-API-DMAC7.html)
JP (1) JP6021922B2 (cg-RX-API-DMAC7.html)
KR (1) KR20140090979A (cg-RX-API-DMAC7.html)
CN (1) CN103958520B (cg-RX-API-DMAC7.html)
WO (1) WO2013039842A1 (cg-RX-API-DMAC7.html)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6093027B2 (ja) 2012-12-03 2017-03-08 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 有機電子素子用のヘテロアセン化合物
CN104956508B (zh) * 2013-01-22 2017-07-21 日本化药株式会社 溶液工艺用有机半导体材料和有机半导体设备
TWI688850B (zh) 2013-08-13 2020-03-21 飛利斯有限公司 具有電子顯示器之物品
WO2015031426A1 (en) 2013-08-27 2015-03-05 Polyera Corporation Flexible display and detection of flex state
CN105793781B (zh) 2013-08-27 2019-11-05 飞利斯有限公司 具有可挠曲电子构件的可附接装置
WO2015038684A1 (en) 2013-09-10 2015-03-19 Polyera Corporation Attachable article with signaling, split display and messaging features
WO2015100224A1 (en) 2013-12-24 2015-07-02 Polyera Corporation Flexible electronic display with user interface based on sensed movements
EP3087560B9 (en) 2013-12-24 2021-08-11 Flexterra, Inc. Support structures for a flexible electronic component
WO2015100396A1 (en) 2013-12-24 2015-07-02 Polyera Corporation Support structures for a flexible electronic component
EP3087812B9 (en) 2013-12-24 2021-06-09 Flexterra, Inc. Support structures for an attachable, two-dimensional flexible electronic device
WO2015120025A1 (en) 2014-02-07 2015-08-13 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
US20150227245A1 (en) 2014-02-10 2015-08-13 Polyera Corporation Attachable Device with Flexible Electronic Display Orientation Detection
JP6247560B2 (ja) * 2014-02-20 2017-12-13 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
US10261634B2 (en) 2014-03-27 2019-04-16 Flexterra, Inc. Infrared touch system for flexible displays
WO2015183567A1 (en) 2014-05-28 2015-12-03 Polyera Corporation Low power display updates
TWI692272B (zh) 2014-05-28 2020-04-21 美商飛利斯有限公司 在多數表面上具有可撓性電子組件之裝置
JP2016001659A (ja) * 2014-06-11 2016-01-07 株式会社東海理化電機製作所 有機半導体材料
EP3171420A4 (en) * 2014-07-18 2017-07-05 Fujifilm Corporation Organic semiconductor film formation composition, organic semiconductor element, and production method therefor
EP2978035A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
JP6742983B2 (ja) 2014-07-24 2020-08-19 フレックステッラ・インコーポレイテッド 有機エレクトロルミネッセンストランジスタ
EP2978037A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
WO2016138356A1 (en) 2015-02-26 2016-09-01 Polyera Corporation Attachable device having a flexible electronic component
TWI680976B (zh) * 2015-03-23 2020-01-01 日商日本化藥股份有限公司 有機化合物、有機半導體材料、有機薄膜及其製造方法、有機半導體組成物，以及有機半導體裝置
US10254795B2 (en) 2015-05-06 2019-04-09 Flexterra, Inc. Attachable, flexible display device with flexible tail
JP6526585B2 (ja) * 2016-02-29 2019-06-05 日本化薬株式会社 縮合多環芳香族化合物及びその用途
EP3425687B1 (en) * 2016-02-29 2021-09-29 National Institute of Advanced Industrial Science and Technology Organic semiconductor composition, organic thin film comprising same, and use thereof
JP6833445B2 (ja) * 2016-10-18 2021-02-24 山本化成株式会社 有機トランジスタ
KR102553881B1 (ko) * 2018-06-01 2023-07-07 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1792893A4 (en) * 2004-08-31 2007-11-21 Idemitsu Kosan Co AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THIS
WO2006086082A2 (en) 2004-12-23 2006-08-17 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
WO2006077888A1 (ja) * 2005-01-19 2006-07-27 National University Of Corporation Hiroshima University 新規な縮合多環芳香族化合物およびその利用
WO2007075748A2 (en) 2005-12-20 2007-07-05 Northwestern University Intercalated superlattice compositions and related methods for modulating dielectric property
TWI462359B (zh) * 2006-10-20 2014-11-21 Nippon Kayaku Kk 場效電晶體及其製造方法
US8232546B2 (en) * 2006-10-25 2012-07-31 Hiroshima University Fused polycyclic aromatic compound, process for producing the same, and use thereof
KR20080100982A (ko) 2007-05-15 2008-11-21 삼성전자주식회사 헤테로아센 화합물, 이를 포함하는 유기 박막 및 상기박막을 포함하는 전자 소자
JP5101939B2 (ja) * 2007-07-12 2012-12-19 山本化成株式会社 有機トランジスタ
JP5481850B2 (ja) * 2008-01-23 2014-04-23 東ソー株式会社 ヘテロアセン誘導体、その前駆化合物及びそれらの製造方法
JP5487655B2 (ja) * 2008-04-17 2014-05-07 株式会社リコー ［１］ベンゾチエノ［３，２‐ｂ］［１］ベンゾチオフェン化合物およびその製造方法、それを用いた有機電子デバイス
JP5428104B2 (ja) * 2008-05-23 2014-02-26 日本化薬株式会社 有機半導体組成物
JP2009302328A (ja) * 2008-06-13 2009-12-24 Nippon Kayaku Co Ltd 有機トランジスタ、およびこれが用いられた有機半導体素子
WO2010024388A1 (ja) * 2008-08-29 2010-03-04 出光興産株式会社 有機薄膜トランジスタ用化合物及びそれを用いた有機薄膜トランジスタ
KR101716196B1 (ko) * 2009-02-27 2017-03-14 니폰 가야꾸 가부시끼가이샤 전계효과 트랜지스터
EP2452942A4 (en) 2009-07-10 2013-01-23 Sumitomo Chemical Co SUBSTITUTED BENZOCHALCOGENACEN COMPOUND, THIN LAYER WITH THE CONNECTION AND ORGANIC SEMICONDUCTOR COMPONENT WITH THE THIN LAYER
JP5655301B2 (ja) * 2009-12-22 2015-01-21 東ソー株式会社 有機半導体材料
US8643001B2 (en) 2010-12-23 2014-02-04 Samsung Electronics Co. Ltd. Semiconductor composition

Also Published As

Publication number Publication date
US20130062598A1 (en) 2013-03-14
US20160351832A1 (en) 2016-12-01
US9911927B2 (en) 2018-03-06
CN103958520A (zh) 2014-07-30
KR20140090979A (ko) 2014-07-18
WO2013039842A1 (en) 2013-03-21
EP2755978A1 (en) 2014-07-23
CN103958520B (zh) 2017-03-22
JP2014531435A (ja) 2014-11-27

Similar Documents

Publication Publication Date Title
JP6021922B2 (ja) 半導体特性を有する化合物、ならびに関連する組成物およびデバイス
CN102066373B (zh) 半导体材料及其制备方法和用途
CN102007131B (zh) [1]苯并噻吩并[3,2-b][1]苯并噻吩化合物及其制法、和用其的有机电子器件
KR101638199B1 (ko) 페릴렌 반도체 및 이의 제조 방법 및 용도
JP5725684B2 (ja) 共役ポリマーおよび光電子デバイスにおけるその使用
KR101177970B1 (ko) 신규한 축합다환방향족 화합물 및 그의 제조 방법과 그의 용도
TWI549327B (zh) 有機場效電晶體及有機半導體材料
CN103635505B (zh) 二噻吩并邻苯二甲酰亚胺半导体聚合物
CN105102462A (zh) 含有氧族元素的有机化合物及其用途
KR20140125407A (ko) 신규한 칼코겐 함유 유기 화합물 및 그 용도
TWI451609B (zh) 作為有機半導體之醌型系統
JP2015502937A (ja) 半導体特性を有する化合物、ならびに関連する組成物およびデバイス
US9312501B2 (en) Semiconducting compounds and optoelectronic devices incorporating same
US8598575B2 (en) Semiconducting compounds and related compositions and devices
JP5650107B2 (ja) チエノピラジン化合物、およびそれを含有した電界効果トランジスタ
TW201730195A (zh) 二噻吩噻二唑半導體及其元件
US8993711B2 (en) Semiconducting polymers and optoelectronic devices incorporating same
US9812645B2 (en) Perylene-based semiconductors
WO2016071140A1 (en) Phenacene compounds for organic electronics
Yang Development of π-Extended Heteroacene-based Materials toward Application in Organic Field-Effect Transistors

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150820

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150820

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160310

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160318

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160617

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160909

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161004

R150 Certificate of patent or registration of utility model

Ref document number: 6021922

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees