JP6010445B2 - 二酸化炭素供給システム、抽出システム、およびリソグラフィ装置 - Google Patents

二酸化炭素供給システム、抽出システム、およびリソグラフィ装置 Download PDF

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Publication number
JP6010445B2
JP6010445B2 JP2012271675A JP2012271675A JP6010445B2 JP 6010445 B2 JP6010445 B2 JP 6010445B2 JP 2012271675 A JP2012271675 A JP 2012271675A JP 2012271675 A JP2012271675 A JP 2012271675A JP 6010445 B2 JP6010445 B2 JP 6010445B2
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Prior art keywords
pressure
gas
carbon dioxide
liquid
switch
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Japanese (ja)
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JP2013131746A (ja
Inventor
デル ガーグ，マルク レオン ヴァン
デル ガーグ，マルク レオン ヴァン
デン ヒューヴェル，レオナルダ，ヘンドリカ ファン
デン ヒューヴェル，レオナルダ，ヘンドリカ ファン
マーテンズ，アルヤン，ヒューブレヒト，ヨセフ，アンナ
ボクステル，フランク，ヨハネス，ヤコブス ヴァン
ボクステル，フランク，ヨハネス，ヤコブス ヴァン
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ASML Netherlands BV
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ASML Netherlands BV
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0396—Involving pressure control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8158—With indicator, register, recorder, alarm or inspection means
    • Y10T137/8326—Fluid pressure responsive indicator, recorder or alarm
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/85986—Pumped fluid control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012271675A 2011-12-20 2012-12-12 二酸化炭素供給システム、抽出システム、およびリソグラフィ装置 Active JP6010445B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161578114P 2011-12-20 2011-12-20
US61/578,114 2011-12-20

Related Child Applications (1)

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JP2015094362A Division JP6145131B2 (ja) 2011-12-20 2015-05-01 ポンプシステム、二酸化炭素供給システム、抽出システム、リソグラフィ装置、およびデバイス製造方法

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JP2013131746A JP2013131746A (ja) 2013-07-04
JP6010445B2 true JP6010445B2 (ja) 2016-10-19

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JP2012271675A Active JP6010445B2 (ja) 2011-12-20 2012-12-12 二酸化炭素供給システム、抽出システム、およびリソグラフィ装置
JP2015094362A Active JP6145131B2 (ja) 2011-12-20 2015-05-01 ポンプシステム、二酸化炭素供給システム、抽出システム、リソグラフィ装置、およびデバイス製造方法

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Country Status (6)

Country Link
US (1) US9575406B2 (https=)
JP (2) JP6010445B2 (https=)
KR (1) KR101410847B1 (https=)
CN (1) CN103176367B (https=)
NL (1) NL2009899A (https=)
TW (1) TWI461860B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2005655A (en) * 2009-12-09 2011-06-14 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
NL2007453A (en) 2010-10-18 2012-04-19 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
NL2009378A (en) * 2011-10-07 2013-04-09 Asml Netherlands Bv Lithographic apparatus and method of cooling a component in a lithographic apparatus.
US10122591B1 (en) * 2013-03-13 2018-11-06 Google Llc Managing access to no-cost content
CN104238277B (zh) * 2013-06-19 2016-12-28 上海微电子装备有限公司 一种浸没式光刻机的流场维持方法
KR101408834B1 (ko) * 2014-01-06 2014-06-20 한국지역난방공사 배기가스 정량 공급이 가능한 산업설비용 추기장치
CN107106938B (zh) 2014-12-19 2019-06-18 Asml荷兰有限公司 流体处理结构、光刻设备和器件制造方法
WO2017036830A1 (en) * 2015-08-31 2017-03-09 Asml Netherlands B.V. A gas leak detector and a method of detecting a leak of gas
US10883866B2 (en) * 2015-09-24 2021-01-05 Fujikin Incorporated Pressure-based flow rate control device and malfunction detection method therefor
CN107991384B (zh) * 2017-12-21 2023-10-13 浙江启尔机电技术有限公司 一种微管内气液两相流流型的检测装置及方法
CN109976098B (zh) * 2019-03-22 2024-04-12 福建华佳彩有限公司 一种光阻刀头
DE102020204545A1 (de) 2020-04-08 2021-10-14 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zum trocknen eines bauteilinnenraums
TW202439039A (zh) * 2023-03-21 2024-10-01 聯華電子股份有限公司 微影機台系統及其液體儲存槽的漏液檢測方法
CN121002450A (zh) * 2023-04-04 2025-11-21 Asml荷兰有限公司 流体处理系统和方法以及制造器件的方法
CN119439646B (zh) * 2024-12-10 2026-03-31 上海新毅东半导体科技有限公司 光刻机的微环境控制架构

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JP2516194B2 (ja) * 1984-06-11 1996-07-10 株式会社日立製作所 投影露光方法
US4632275A (en) * 1984-09-21 1986-12-30 Parks Charles K Palatability stabilizer
ATE92171T1 (de) * 1988-09-08 1993-08-15 Air Liquide Verfahren und behaelter zum abliefern vom superkritischen kohlendioxid.
CN2077505U (zh) 1990-08-14 1991-05-22 张永茂 液化气安全阀
JP4011643B2 (ja) * 1996-01-05 2007-11-21 キヤノン株式会社 半導体製造装置
KR19980021718U (ko) * 1996-10-23 1998-07-15 김학용 책표지
JPH10202045A (ja) * 1997-01-20 1998-08-04 Sony Corp 排ガス処理設備
JP3866840B2 (ja) * 1997-10-28 2007-01-10 三機工業株式会社 不活性ガス供給設備
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP3832984B2 (ja) * 1998-10-27 2006-10-11 キヤノン株式会社 露光装置およびデバイス製造方法
KR20010089431A (ko) * 1998-11-19 2001-10-06 시마무라 테루오 광학장치와 노광장치 및 레이저광원, 가스 공급방법,노광방법, 디바이스의 제조방법
JP4878082B2 (ja) * 2001-02-28 2012-02-15 キヤノン株式会社 露光装置およびデバイス製造方法
JP2003102858A (ja) * 2001-09-28 2003-04-08 Nohmi Bosai Ltd 閉鎖空間の防火システム
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
SG135052A1 (en) 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2004258113A (ja) * 2003-02-24 2004-09-16 Nikon Corp マスク保護装置、マスク、ガス置換装置、露光装置、ガス置換方法及び露光方法
JP2005142185A (ja) * 2003-11-04 2005-06-02 Canon Inc 露光装置及びその環境制御方法
JP4323946B2 (ja) 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
KR101440743B1 (ko) * 2004-01-05 2014-09-17 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7481867B2 (en) * 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006064713A1 (ja) * 2004-12-15 2006-06-22 Olympus Medical Systems Corp. 送気装置、送気装置の制御方法、送気システム、及び内視鏡システム
DE602006012746D1 (de) 2005-01-14 2010-04-22 Asml Netherlands Bv Lithografische Vorrichtung und Herstellungsverfahren
JP5162254B2 (ja) 2005-02-10 2013-03-13 エーエスエムエル ネザーランズ ビー．ブイ． 液浸リソグラフィシステム及びデバイス製造方法
KR101396620B1 (ko) * 2005-04-25 2014-05-16 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
US20070085989A1 (en) 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
JP2007142366A (ja) * 2005-10-18 2007-06-07 Canon Inc 露光装置及びデバイス製造方法
JP2007115758A (ja) * 2005-10-18 2007-05-10 Nikon Corp 露光方法及び露光装置
WO2007058223A1 (ja) * 2005-11-16 2007-05-24 Olympus Corporation 光学顕微鏡装置
US7903232B2 (en) 2006-04-12 2011-03-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4582060B2 (ja) * 2006-06-29 2010-11-17 パナソニック株式会社 ガス遮断装置
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20080075727A (ko) 2007-02-13 2008-08-19 삼성전자주식회사 액침 노광 장치 및 액침 노광 방법
SG151198A1 (en) 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP2009130308A (ja) * 2007-11-28 2009-06-11 Renesas Technology Corp 表面処理装置
NL1036273A1 (nl) 2007-12-18 2009-06-19 Asml Netherlands Bv Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus.
US7918367B2 (en) 2008-02-22 2011-04-05 O'donnell Kevin P Apparatus and method for monitoring bulk tank cryogenic systems
EP2251596B1 (en) * 2008-03-06 2016-08-03 IHI Corporation Method and facility for feeding carbon dioxide to oxyfuel combustion boiler
EP2131241B1 (en) 2008-05-08 2019-07-31 ASML Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US8421993B2 (en) 2008-05-08 2013-04-16 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
JP2010077957A (ja) * 2008-09-29 2010-04-08 Toyota Motor Corp ２次空気供給装置
JP2010098172A (ja) * 2008-10-17 2010-04-30 Canon Inc 液体回収装置、露光装置及びデバイス製造方法
WO2010103822A1 (ja) * 2009-03-10 2010-09-16 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
SG166747A1 (en) 2009-05-26 2010-12-29 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method
KR20120049176A (ko) * 2009-06-19 2012-05-16 쥬오세이키 가부시키가이샤 액화 가스 연료 공급 장치
JP5544791B2 (ja) * 2009-08-31 2014-07-09 Ｊｆｅスチール株式会社 焼結機
NL2005089A (nl) * 2009-09-23 2011-03-28 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
NL2005528A (en) * 2009-12-02 2011-06-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL2005655A (en) 2009-12-09 2011-06-14 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
JP2011165318A (ja) * 2010-02-04 2011-08-25 Panasonic Corp 燃料電池発電装置システム
NL2007453A (en) 2010-10-18 2012-04-19 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.

Also Published As

Publication number Publication date
JP2013131746A (ja) 2013-07-04
JP6145131B2 (ja) 2017-06-07
US9575406B2 (en) 2017-02-21
NL2009899A (en) 2013-06-24
JP2015146047A (ja) 2015-08-13
TWI461860B (zh) 2014-11-21
KR20130071407A (ko) 2013-06-28
CN103176367B (zh) 2016-02-03
US20130155380A1 (en) 2013-06-20
TW201335723A (zh) 2013-09-01
KR101410847B1 (ko) 2014-06-23
CN103176367A (zh) 2013-06-26

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