JP6009738B2 - ナノチャネルデバイスおよびその製造方法 - Google Patents
ナノチャネルデバイスおよびその製造方法 Download PDFInfo
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- JP6009738B2 JP6009738B2 JP2011103699A JP2011103699A JP6009738B2 JP 6009738 B2 JP6009738 B2 JP 6009738B2 JP 2011103699 A JP2011103699 A JP 2011103699A JP 2011103699 A JP2011103699 A JP 2011103699A JP 6009738 B2 JP6009738 B2 JP 6009738B2
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- 239000002090 nanochannel Substances 0.000 title claims description 192
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000000463 material Substances 0.000 claims description 91
- 239000013078 crystal Substances 0.000 claims description 90
- 239000000758 substrate Substances 0.000 claims description 44
- 239000000945 filler Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 27
- 229910052732 germanium Inorganic materials 0.000 claims description 25
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 25
- 239000011148 porous material Substances 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 description 65
- 238000000151 deposition Methods 0.000 description 14
- 239000002243 precursor Substances 0.000 description 12
- 230000008901 benefit Effects 0.000 description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 238000000018 DNA microarray Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 230000005226 mechanical processes and functions Effects 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000012686 silicon precursor Substances 0.000 description 2
- IERHLVCPSMICTF-XVFCMESISA-N CMP group Chemical group P(=O)(O)(O)OC[C@@H]1[C@H]([C@H]([C@@H](O1)N1C(=O)N=C(N)C=C1)O)O IERHLVCPSMICTF-XVFCMESISA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VJFOQKOUHKDIGD-UHFFFAOYSA-N [GeH3][SiH3] Chemical class [GeH3][SiH3] VJFOQKOUHKDIGD-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013317 conjugated microporous polymer Substances 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 238000002789 length control Methods 0.000 description 1
- 210000003643 myeloid progenitor cell Anatomy 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
- B01L2300/06—Auxiliary integrated devices, integrated components
- B01L2300/0627—Sensor or part of a sensor is integrated
- B01L2300/0636—Integrated biosensor, microarrays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
- B01L2300/06—Auxiliary integrated devices, integrated components
- B01L2300/0627—Sensor or part of a sensor is integrated
- B01L2300/0645—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
- B01L2300/08—Geometry, shape and general structure
- B01L2300/0896—Nanoscaled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Dispersion Chemistry (AREA)
- Analytical Chemistry (AREA)
- Hematology (AREA)
- Clinical Laboratory Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Micromachines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33121210P | 2010-05-04 | 2010-05-04 | |
| US61/331,212 | 2010-05-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012023337A JP2012023337A (ja) | 2012-02-02 |
| JP6009738B2 true JP6009738B2 (ja) | 2016-10-19 |
Family
ID=44351752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011103699A Active JP6009738B2 (ja) | 2010-05-04 | 2011-05-06 | ナノチャネルデバイスおよびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8384195B2 (de) |
| EP (1) | EP2384816B1 (de) |
| JP (1) | JP6009738B2 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
| US8901621B1 (en) * | 2013-06-18 | 2014-12-02 | International Business Machines Corporation | Nanochannel process and structure for bio-detection |
| KR20150085956A (ko) | 2014-01-17 | 2015-07-27 | 삼성전자주식회사 | 반도체 소자의 계측 방법, 반도체 계측 시스템, 및 이들을 이용한 반도체 소자의 제조방법 |
| US10344324B2 (en) | 2014-03-26 | 2019-07-09 | International Business Machines Corporation | Electrical trapping and stretching of charged biomolecules by single electrode gating structure |
| US9146211B1 (en) | 2014-03-26 | 2015-09-29 | International Business Machines Corporation | Nano-ring gate electrode nanochannels |
| US9228994B1 (en) | 2014-08-06 | 2016-01-05 | Globalfoundries Inc. | Nanochannel electrode devices |
| US20170191912A1 (en) | 2016-01-06 | 2017-07-06 | International Business Machines Corporation | Semiconductor manufactured nano-structures for microbe or virus trapping or destruction |
| US11905163B2 (en) * | 2019-04-03 | 2024-02-20 | Boe Technology Group Co., Ltd. | Micro-nano channel structure, sensor and manufacturing method thereof, and microfluidic device |
| CN113479841B (zh) * | 2021-05-24 | 2024-05-28 | 中国电子科技集团公司第五十五研究所 | 一种硅基微流道基板制备方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4210470A (en) * | 1979-03-05 | 1980-07-01 | International Business Machines Corporation | Epitaxial tunnels from intersecting growth planes |
| US4522662A (en) * | 1983-08-12 | 1985-06-11 | Hewlett-Packard Company | CVD lateral epitaxial growth of silicon over insulators |
| EP1073112A1 (de) * | 1999-07-26 | 2001-01-31 | STMicroelectronics S.r.l. | Verfahren zur Herstellung eines SOI-Wafers mittels Oxidierung von vergrabenen Hohlräumen |
| JP3485081B2 (ja) * | 1999-10-28 | 2004-01-13 | 株式会社デンソー | 半導体基板の製造方法 |
| JP2001267242A (ja) * | 2000-03-14 | 2001-09-28 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体及びその製造方法 |
| US7294536B2 (en) * | 2000-07-25 | 2007-11-13 | Stmicroelectronics S.R.L. | Process for manufacturing an SOI wafer by annealing and oxidation of buried channels |
| SG169225A1 (en) * | 2001-07-25 | 2011-03-30 | Univ Princeton | Nanochannel arrays and their preparation and use for high throughput macromolecular analysis |
| EP1427010B1 (de) * | 2002-11-29 | 2012-01-11 | STMicroelectronics Srl | Verfahren zur Herstellung eines Halbleitersubstrates mit mindestens einem vergrabenen Hohlraum |
| JP2007142276A (ja) * | 2005-11-21 | 2007-06-07 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP5072221B2 (ja) * | 2005-12-26 | 2012-11-14 | 株式会社東芝 | 半導体装置及びその製造方法 |
| EP2021790A4 (de) | 2006-05-31 | 2011-09-07 | Agency Science Tech & Res | Transparente mikrofluidvorrichtung |
| EP1926130A1 (de) * | 2006-11-27 | 2008-05-28 | S.O.I.TEC. Silicon on Insulator Technologies S.A. | Verfahren zum Verbessern der Oberfläche eines Halbleitersubstrats |
| FR2909368A1 (fr) * | 2006-12-21 | 2008-06-06 | Commissariat Energie Atomique | Procede de realisation de micro-cavites |
-
2011
- 2011-05-03 EP EP11164603.0A patent/EP2384816B1/de active Active
- 2011-05-04 US US13/100,537 patent/US8384195B2/en active Active
- 2011-05-06 JP JP2011103699A patent/JP6009738B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2384816A1 (de) | 2011-11-09 |
| JP2012023337A (ja) | 2012-02-02 |
| US8384195B2 (en) | 2013-02-26 |
| US20110272789A1 (en) | 2011-11-10 |
| EP2384816B1 (de) | 2018-04-04 |
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