JP6003316B2 - 固体撮像装置、電子機器 - Google Patents

固体撮像装置、電子機器 Download PDF

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Publication number
JP6003316B2
JP6003316B2 JP2012156899A JP2012156899A JP6003316B2 JP 6003316 B2 JP6003316 B2 JP 6003316B2 JP 2012156899 A JP2012156899 A JP 2012156899A JP 2012156899 A JP2012156899 A JP 2012156899A JP 6003316 B2 JP6003316 B2 JP 6003316B2
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JP
Japan
Prior art keywords
pixel
color
trench
color filter
pixels
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Expired - Fee Related
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JP2012156899A
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English (en)
Japanese (ja)
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JP2014022415A (ja
JP2014022415A5 (enExample
Inventor
池田　晴美
晴美 池田
舘下　八州志
八州志 舘下
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012156899A priority Critical patent/JP6003316B2/ja
Priority to US13/934,642 priority patent/US8969988B2/en
Priority to CN201310280645.0A priority patent/CN103545329B/zh
Publication of JP2014022415A publication Critical patent/JP2014022415A/ja
Publication of JP2014022415A5 publication Critical patent/JP2014022415A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
JP2012156899A 2012-07-12 2012-07-12 固体撮像装置、電子機器 Expired - Fee Related JP6003316B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012156899A JP6003316B2 (ja) 2012-07-12 2012-07-12 固体撮像装置、電子機器
US13/934,642 US8969988B2 (en) 2012-07-12 2013-07-03 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic device
CN201310280645.0A CN103545329B (zh) 2012-07-12 2013-07-05 固态成像装置、制造固态成像装置的方法以及电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012156899A JP6003316B2 (ja) 2012-07-12 2012-07-12 固体撮像装置、電子機器

Publications (3)

Publication Number Publication Date
JP2014022415A JP2014022415A (ja) 2014-02-03
JP2014022415A5 JP2014022415A5 (enExample) 2015-04-16
JP6003316B2 true JP6003316B2 (ja) 2016-10-05

Family

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JP2012156899A Expired - Fee Related JP6003316B2 (ja) 2012-07-12 2012-07-12 固体撮像装置、電子機器

Country Status (3)

Country Link
US (1) US8969988B2 (enExample)
JP (1) JP6003316B2 (enExample)
CN (1) CN103545329B (enExample)

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* Cited by examiner, † Cited by third party
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JP6303803B2 (ja) 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
JP6465545B2 (ja) 2013-09-27 2019-02-06 ソニー株式会社 撮像素子およびその製造方法ならびに電子機器
US9841319B2 (en) * 2013-11-19 2017-12-12 United Microelectronics Corp. Light detecting device
US10276620B2 (en) 2014-02-27 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the same
KR102209097B1 (ko) * 2014-02-27 2021-01-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
US9582201B2 (en) 2014-09-26 2017-02-28 Western Digital Technologies, Inc. Multi-tier scheme for logical storage management
TWI700824B (zh) 2015-02-09 2020-08-01 日商索尼半導體解決方案公司 攝像元件及電子裝置
US9584744B2 (en) * 2015-06-23 2017-02-28 Semiconductor Components Industries, Llc Image sensors with voltage-biased trench isolation structures
US10777597B2 (en) * 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device
US10211244B2 (en) 2017-06-30 2019-02-19 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device with reflective structure and method for forming the same
JP2018133575A (ja) * 2018-03-08 2018-08-23 ソニー株式会社 固体撮像装置、電子機器、及び、固体撮像装置の製造方法
JP2020085666A (ja) * 2018-11-26 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 生体由来物質検出用チップ、生体由来物質検出装置及び生体由来物質検出システム
WO2020177123A1 (en) 2019-03-07 2020-09-10 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Color imaging system
CN112909031A (zh) 2019-12-04 2021-06-04 半导体元件工业有限责任公司 半导体器件
CN112909034A (zh) * 2019-12-04 2021-06-04 半导体元件工业有限责任公司 半导体器件
CN112909033A (zh) 2019-12-04 2021-06-04 半导体元件工业有限责任公司 半导体器件
US11764314B2 (en) 2019-12-04 2023-09-19 Semiconductor Components Industries, Llc Scattering structures for single-photon avalanche diodes
CN112909032A (zh) 2019-12-04 2021-06-04 半导体元件工业有限责任公司 半导体器件
US11244979B2 (en) * 2019-12-19 2022-02-08 Omnivision Technologies, Inc. Deep trench isolation (DTI) structure for CMOS image sensor
CN113141444B (zh) 2020-01-19 2023-08-08 Oppo广东移动通信有限公司 图像传感器、成像装置、电子设备、图像处理系统及信号处理方法
CN111741239B (zh) * 2020-06-29 2022-04-12 深圳市汇顶科技股份有限公司 图像传感器和电子设备
JP2024137356A (ja) * 2023-03-24 2024-10-07 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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JP2005340299A (ja) * 2004-05-24 2005-12-08 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法並びにカメラ
JP4623641B2 (ja) * 2005-02-23 2011-02-02 パナソニック株式会社 固体撮像装置の製造方法
JP5098310B2 (ja) * 2006-11-28 2012-12-12 凸版印刷株式会社 固体撮像装置の製造方法
JP2008271123A (ja) * 2007-04-19 2008-11-06 Konica Minolta Holdings Inc 撮像装置
JP2009081169A (ja) * 2007-09-25 2009-04-16 Fujifilm Corp 固体撮像素子
CN101588506B (zh) * 2008-05-22 2012-05-30 索尼株式会社 固体摄像装置及其制造方法以及电子设备
CN101604700B (zh) * 2008-06-13 2012-12-12 台湾积体电路制造股份有限公司 图像检测元件及其形成方法
KR101550067B1 (ko) * 2008-12-24 2015-09-03 인텔렉추얼디스커버리 주식회사 이미지 센서 및 이의 제조 방법
JP4816768B2 (ja) 2009-06-22 2011-11-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2010258157A (ja) * 2009-04-23 2010-11-11 Panasonic Corp 固体撮像装置およびその製造方法
JP2011054911A (ja) * 2009-09-04 2011-03-17 Sony Corp 固体撮像装置、および、その製造方法、電子機器
KR20110036994A (ko) * 2009-10-05 2011-04-13 주식회사 동부하이텍 이미지 센서 및 이미지 센서의 제조 방법
JP5736755B2 (ja) * 2010-12-09 2015-06-17 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
KR101232282B1 (ko) * 2011-04-27 2013-02-12 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법

Also Published As

Publication number Publication date
CN103545329A (zh) 2014-01-29
US20140015085A1 (en) 2014-01-16
JP2014022415A (ja) 2014-02-03
US8969988B2 (en) 2015-03-03
CN103545329B (zh) 2019-01-25

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