CN103545329B - 固态成像装置、制造固态成像装置的方法以及电子设备 - Google Patents

固态成像装置、制造固态成像装置的方法以及电子设备 Download PDF

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Publication number
CN103545329B
CN103545329B CN201310280645.0A CN201310280645A CN103545329B CN 103545329 B CN103545329 B CN 103545329B CN 201310280645 A CN201310280645 A CN 201310280645A CN 103545329 B CN103545329 B CN 103545329B
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China
Prior art keywords
pixel
groove
image pickup
solid state
state image
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Expired - Fee Related
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CN201310280645.0A
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English (en)
Chinese (zh)
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CN103545329A (zh
Inventor
池田晴美
舘下八州志
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
CN201310280645.0A 2012-07-12 2013-07-05 固态成像装置、制造固态成像装置的方法以及电子设备 Expired - Fee Related CN103545329B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-156899 2012-07-12
JP2012156899A JP6003316B2 (ja) 2012-07-12 2012-07-12 固体撮像装置、電子機器

Publications (2)

Publication Number Publication Date
CN103545329A CN103545329A (zh) 2014-01-29
CN103545329B true CN103545329B (zh) 2019-01-25

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Country Status (3)

Country Link
US (1) US8969988B2 (enExample)
JP (1) JP6003316B2 (enExample)
CN (1) CN103545329B (enExample)

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JP6303803B2 (ja) 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
JP6465545B2 (ja) 2013-09-27 2019-02-06 ソニー株式会社 撮像素子およびその製造方法ならびに電子機器
US9841319B2 (en) * 2013-11-19 2017-12-12 United Microelectronics Corp. Light detecting device
US10276620B2 (en) 2014-02-27 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the same
KR102209097B1 (ko) * 2014-02-27 2021-01-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
US9582201B2 (en) 2014-09-26 2017-02-28 Western Digital Technologies, Inc. Multi-tier scheme for logical storage management
TWI700824B (zh) 2015-02-09 2020-08-01 日商索尼半導體解決方案公司 攝像元件及電子裝置
US9584744B2 (en) * 2015-06-23 2017-02-28 Semiconductor Components Industries, Llc Image sensors with voltage-biased trench isolation structures
US10777597B2 (en) * 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device
US10211244B2 (en) 2017-06-30 2019-02-19 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device with reflective structure and method for forming the same
JP2018133575A (ja) * 2018-03-08 2018-08-23 ソニー株式会社 固体撮像装置、電子機器、及び、固体撮像装置の製造方法
JP2020085666A (ja) * 2018-11-26 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 生体由来物質検出用チップ、生体由来物質検出装置及び生体由来物質検出システム
WO2020177123A1 (en) 2019-03-07 2020-09-10 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Color imaging system
CN112909031A (zh) 2019-12-04 2021-06-04 半导体元件工业有限责任公司 半导体器件
CN112909034A (zh) * 2019-12-04 2021-06-04 半导体元件工业有限责任公司 半导体器件
CN112909033A (zh) 2019-12-04 2021-06-04 半导体元件工业有限责任公司 半导体器件
US11764314B2 (en) 2019-12-04 2023-09-19 Semiconductor Components Industries, Llc Scattering structures for single-photon avalanche diodes
CN112909032A (zh) 2019-12-04 2021-06-04 半导体元件工业有限责任公司 半导体器件
US11244979B2 (en) * 2019-12-19 2022-02-08 Omnivision Technologies, Inc. Deep trench isolation (DTI) structure for CMOS image sensor
CN113141444B (zh) 2020-01-19 2023-08-08 Oppo广东移动通信有限公司 图像传感器、成像装置、电子设备、图像处理系统及信号处理方法
CN111741239B (zh) * 2020-06-29 2022-04-12 深圳市汇顶科技股份有限公司 图像传感器和电子设备
JP2024137356A (ja) * 2023-03-24 2024-10-07 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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CN101764142A (zh) * 2008-12-24 2010-06-30 东部高科股份有限公司 图像传感器及其制造方法

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CN101764142A (zh) * 2008-12-24 2010-06-30 东部高科股份有限公司 图像传感器及其制造方法

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CN103545329A (zh) 2014-01-29
US20140015085A1 (en) 2014-01-16
JP6003316B2 (ja) 2016-10-05
JP2014022415A (ja) 2014-02-03
US8969988B2 (en) 2015-03-03

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