JP6003063B2 - 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 - Google Patents

光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 Download PDF

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Publication number
JP6003063B2
JP6003063B2 JP2012007939A JP2012007939A JP6003063B2 JP 6003063 B2 JP6003063 B2 JP 6003063B2 JP 2012007939 A JP2012007939 A JP 2012007939A JP 2012007939 A JP2012007939 A JP 2012007939A JP 6003063 B2 JP6003063 B2 JP 6003063B2
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conductive region
interface
region
terahertz wave
semiconductor
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JP2012007939A
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Japanese (ja)
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JP2013149714A5 (enExample
JP2013149714A (ja
Inventor
竹中　敏
敏 竹中
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2012007939A priority Critical patent/JP6003063B2/ja
Priority to US13/721,960 priority patent/US8878134B2/en
Priority to CN201310015567.1A priority patent/CN103219631B/zh
Publication of JP2013149714A publication Critical patent/JP2013149714A/ja
Priority to US14/504,643 priority patent/US9130118B2/en
Publication of JP2013149714A5 publication Critical patent/JP2013149714A5/ja
Priority to US14/818,585 priority patent/US9349917B2/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0077—Imaging
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/12—Materials and properties photoconductor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/13—Function characteristic involving THZ radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Light Receiving Elements (AREA)
JP2012007939A 2012-01-18 2012-01-18 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 Expired - Fee Related JP6003063B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012007939A JP6003063B2 (ja) 2012-01-18 2012-01-18 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置
US13/721,960 US8878134B2 (en) 2012-01-18 2012-12-20 Photoconductive antenna, terahertz wave generating device, camera, imaging device, and measuring device
CN201310015567.1A CN103219631B (zh) 2012-01-18 2013-01-16 光导天线、太赫兹波产生装置、拍摄装置、成像装置
US14/504,643 US9130118B2 (en) 2012-01-18 2014-10-02 Photoconductive antenna, terahertz wave generating device, camera, imaging device, and measuring device
US14/818,585 US9349917B2 (en) 2012-01-18 2015-08-05 Photoconductive antenna, terahertz wave generating device, camera, imaging device, and measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012007939A JP6003063B2 (ja) 2012-01-18 2012-01-18 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置

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JP2013149714A JP2013149714A (ja) 2013-08-01
JP2013149714A5 JP2013149714A5 (enExample) 2015-03-05
JP6003063B2 true JP6003063B2 (ja) 2016-10-05

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US (3) US8878134B2 (enExample)
JP (1) JP6003063B2 (enExample)
CN (1) CN103219631B (enExample)

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JP5799538B2 (ja) * 2011-03-18 2015-10-28 セイコーエプソン株式会社 テラヘルツ波発生装置、カメラ、イメージング装置、計測装置および光源装置
JP5987346B2 (ja) * 2012-02-23 2016-09-07 セイコーエプソン株式会社 アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置、および計測装置
JP6032427B2 (ja) * 2013-02-27 2016-11-30 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
KR102100931B1 (ko) * 2014-01-03 2020-04-14 삼성전자주식회사 광전도 안테나
JP2015148541A (ja) * 2014-02-07 2015-08-20 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
JP2015159176A (ja) * 2014-02-24 2015-09-03 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
US20190227404A1 (en) * 2016-07-20 2019-07-25 National University Of Singapore Terahertz Radiation Emitters
RU2731166C2 (ru) * 2018-07-19 2020-08-31 Федеральное государственное автономное научное учреждение Институт сверхвысокочастотной полупроводниковой электроники имени В.Г. Мокерова Российской академии наук (ФГАНУ ИСВЧПЭ РАН, ИСВЧПЭ РАН) Способ изготовления фотопроводящих антенн
WO2020145233A1 (ja) * 2019-01-08 2020-07-16 パイオニア株式会社 電磁波検出装置及び電磁波検出システム
JP7455611B2 (ja) * 2019-03-14 2024-03-26 キヤノン株式会社 処理システム
JP2020198448A (ja) * 2020-08-26 2020-12-10 パイオニア株式会社 光伝導素子及び計測装置

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Also Published As

Publication number Publication date
US20130181128A1 (en) 2013-07-18
US9349917B2 (en) 2016-05-24
CN103219631A (zh) 2013-07-24
US8878134B2 (en) 2014-11-04
US9130118B2 (en) 2015-09-08
US20150340560A1 (en) 2015-11-26
JP2013149714A (ja) 2013-08-01
CN103219631B (zh) 2017-09-22
US20150014532A1 (en) 2015-01-15

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