JP6001345B2 - トランジスタ用半導体基板、トランジスタ及びトランジスタ用半導体基板の製造方法 - Google Patents
トランジスタ用半導体基板、トランジスタ及びトランジスタ用半導体基板の製造方法 Download PDFInfo
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- JP6001345B2 JP6001345B2 JP2012138060A JP2012138060A JP6001345B2 JP 6001345 B2 JP6001345 B2 JP 6001345B2 JP 2012138060 A JP2012138060 A JP 2012138060A JP 2012138060 A JP2012138060 A JP 2012138060A JP 6001345 B2 JP6001345 B2 JP 6001345B2
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- 239000000758 substrate Substances 0.000 title claims description 64
- 239000004065 semiconductor Substances 0.000 title claims description 55
- 238000000034 method Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000013078 crystal Substances 0.000 claims description 166
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 239000012159 carrier gas Substances 0.000 claims description 13
- 229910052706 scandium Inorganic materials 0.000 claims description 10
- 229910052727 yttrium Inorganic materials 0.000 claims description 9
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 9
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 7
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 4
- 150000002602 lanthanoids Chemical class 0.000 claims description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 description 54
- 239000000203 mixture Substances 0.000 description 33
- 229910002704 AlGaN Inorganic materials 0.000 description 20
- 230000010287 polarization Effects 0.000 description 16
- 238000004364 calculation method Methods 0.000 description 8
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 5
- 230000005533 two-dimensional electron gas Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000003775 Density Functional Theory Methods 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
Description
非特許文献1 H. Sazawa et al., physica status solidi (c), 4, (2007)2748
Claims (9)
- ベース基板と、
前記ベース基板上に設けられた、IIIa族元素を含む窒化物の第1結晶からなる第1エピタキシャル結晶層と、
前記第1エピタキシャル結晶層上に設けられ、前記第1結晶よりも大きなバンドギャップを有し、かつ、IIIa族元素及び前記IIIa族元素の一部を置換したIIIb族元素を含む窒化物の第2結晶からなる第2エピタキシャル結晶層と
を備え、
前記第1エピタキシャル結晶層と前記第2エピタキシャル結晶層との間にトランジスタのチャネルとして機能する2次元キャリアガスが生成される
トランジスタ用半導体基板。
(但し、IIIa族およびIIIb族は、旧CAS方式における名称である。) - 前記第2エピタキシャル結晶層が、前記第1エピタキシャル結晶層に格子整合又は疑格子整合する請求項1に記載のトランジスタ用半導体基板。
- 前記第1結晶がInxAlyGa1−x―yN(ただし、0≦x≦1、0≦y≦1)であり、
前記第2結晶がMqAlzGa1−q―zNであり、
Mはスカンジウム、イットリウム及びランタノイド系元素群の中から選ばれる一種以上の元素であり、
0<q≦0.30、0<z<1、q+z≦1である請求項1または2に記載のトランジスタ用半導体基板。 - 前記第2エピタキシャル結晶層の導電型がn型又は絶縁型である請求項1から3のいずれか一項に記載のトランジスタ用半導体基板。
- 前記第1結晶がGaNであり、
前記MqAlzGa1−q―zNにおけるMがイットリウムまたはスカンジウムであり、
q/zの値が0.1から0.35の範囲である請求項3に記載のトランジスタ用半導体基板。 - 前記第1結晶又は前記第2結晶の結晶構造がウルツ鉱型である請求項1から5のいずれか一項に記載のトランジスタ用半導体基板。
- 請求項1から6のいずれか一項に記載のトランジスタ用半導体基板を備え、
前記第1エピタキシャル結晶層と前記第2エピタキシャル結晶層との界面よりも前記第1エピタキシャル結晶層側に生成される2次元キャリアガスをチャネルとするトランジスタ。 - ノーマリオフ動作する請求項7に記載のトランジスタ。
- ベース基板上に、IIIa族元素を含む窒化物の第1結晶をエピタキシャル成長させて第1エピタキシャル結晶層を形成する段階と、
前記第1エピタキシャル結晶層上に、前記第1結晶よりも大きなバンドギャップを有し、かつ、IIIa族元素及び前記IIIa族元素の一部を置換したIIIb族元素を含む窒化物の第2結晶をエピタキシャル成長させて、第2エピタキシャル結晶層を形成する段階と
を備え、
前記第1エピタキシャル結晶層と前記第2エピタキシャル結晶層との間にトランジスタのチャネルとして機能する2次元キャリアガスが生成される
トランジスタ用半導体基板の製造方法。
(但し、IIIa族およびIIIb族は、旧CAS方式における名称である。)
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JP2012138060A JP6001345B2 (ja) | 2011-06-24 | 2012-06-19 | トランジスタ用半導体基板、トランジスタ及びトランジスタ用半導体基板の製造方法 |
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JP6001345B2 true JP6001345B2 (ja) | 2016-10-05 |
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TW (1) | TW201306257A (ja) |
WO (1) | WO2012176411A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2779213B1 (en) * | 2013-03-12 | 2015-05-06 | Siltronic AG | Semiconductor wafer with a layer of AlzGa1-zN and process for producing it |
US9142406B1 (en) * | 2014-05-02 | 2015-09-22 | Translucent, Inc. | III-N material grown on ErAlN buffer on Si substrate |
CN108615756B (zh) * | 2018-06-15 | 2024-06-14 | 苏州汉骅半导体有限公司 | 半导体器件 |
JP2021027151A (ja) * | 2019-08-05 | 2021-02-22 | 富士通株式会社 | 半導体装置、半導体装置の製造方法及び増幅器 |
JPWO2023047864A1 (ja) * | 2021-09-21 | 2023-03-30 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3464890B2 (ja) * | 1997-07-30 | 2003-11-10 | 株式会社東芝 | 半導体発光装置 |
JP3209270B2 (ja) * | 1999-01-29 | 2001-09-17 | 日本電気株式会社 | ヘテロ接合電界効果トランジスタ |
JP2000243947A (ja) * | 1999-02-19 | 2000-09-08 | Sharp Corp | 窒化物系化合物半導体装置 |
JP3392788B2 (ja) * | 1999-08-19 | 2003-03-31 | シャープ株式会社 | 半導体装置 |
JP2007305954A (ja) * | 2006-03-27 | 2007-11-22 | Nichia Chem Ind Ltd | 電界効果トランジスタ及びその装置 |
KR100770441B1 (ko) * | 2006-08-21 | 2007-10-26 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
JP2009182054A (ja) * | 2008-01-29 | 2009-08-13 | Sumitomo Electric Ind Ltd | 半導体装置、基板、半導体装置の製造方法および基板の製造方法 |
FR2929445B1 (fr) * | 2008-03-25 | 2010-05-21 | Picogiga Internat | Procede de fabrication d'une couche de nitrure de gallium ou de nitrure de gallium et d'aluminium |
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- 2012-06-14 WO PCT/JP2012/003908 patent/WO2012176411A1/ja active Application Filing
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WO2012176411A1 (ja) | 2012-12-27 |
JP2013030763A (ja) | 2013-02-07 |
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