JP5996254B2 - リフトオフ方法 - Google Patents

リフトオフ方法 Download PDF

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Publication number
JP5996254B2
JP5996254B2 JP2012101535A JP2012101535A JP5996254B2 JP 5996254 B2 JP5996254 B2 JP 5996254B2 JP 2012101535 A JP2012101535 A JP 2012101535A JP 2012101535 A JP2012101535 A JP 2012101535A JP 5996254 B2 JP5996254 B2 JP 5996254B2
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JP
Japan
Prior art keywords
layer
substrate
optical device
epitaxy substrate
epitaxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012101535A
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English (en)
Japanese (ja)
Other versions
JP2013229508A (ja
Inventor
洋司 森數
洋司 森數
健太呂 飯塚
健太呂 飯塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2012101535A priority Critical patent/JP5996254B2/ja
Priority to TW102109471A priority patent/TWI575590B/zh
Priority to KR1020130039112A priority patent/KR101876588B1/ko
Priority to CN201310145344.7A priority patent/CN103378232B/zh
Publication of JP2013229508A publication Critical patent/JP2013229508A/ja
Application granted granted Critical
Publication of JP5996254B2 publication Critical patent/JP5996254B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2012101535A 2012-04-26 2012-04-26 リフトオフ方法 Active JP5996254B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012101535A JP5996254B2 (ja) 2012-04-26 2012-04-26 リフトオフ方法
TW102109471A TWI575590B (zh) 2012-04-26 2013-03-18 Methodology (2)
KR1020130039112A KR101876588B1 (ko) 2012-04-26 2013-04-10 리프트 오프 방법
CN201310145344.7A CN103378232B (zh) 2012-04-26 2013-04-24 提离方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012101535A JP5996254B2 (ja) 2012-04-26 2012-04-26 リフトオフ方法

Publications (2)

Publication Number Publication Date
JP2013229508A JP2013229508A (ja) 2013-11-07
JP5996254B2 true JP5996254B2 (ja) 2016-09-21

Family

ID=49463071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012101535A Active JP5996254B2 (ja) 2012-04-26 2012-04-26 リフトオフ方法

Country Status (4)

Country Link
JP (1) JP5996254B2 (zh)
KR (1) KR101876588B1 (zh)
CN (1) CN103378232B (zh)
TW (1) TWI575590B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6366996B2 (ja) * 2014-05-19 2018-08-01 株式会社ディスコ リフトオフ方法
JP6349175B2 (ja) * 2014-07-14 2018-06-27 株式会社ディスコ リフトオフ方法及び超音波ホーン
JP6450637B2 (ja) * 2015-04-21 2019-01-09 株式会社ディスコ リフトオフ方法及び超音波ホーン
KR20160126500A (ko) 2015-04-23 2016-11-02 부경대학교 산학협력단 하이브리드 자율 무인 잠수정
JP2017103405A (ja) * 2015-12-04 2017-06-08 株式会社ディスコ ウエーハの加工方法
CN106271107A (zh) * 2016-09-07 2017-01-04 京东方科技集团股份有限公司 切割设备及显示母板的切割方法
CN106475680B (zh) * 2016-12-09 2018-12-07 深圳市吉祥云科技有限公司 一种采用激光拆解夹层内oca光学胶的方法
TW201917811A (zh) * 2017-06-26 2019-05-01 美商特索羅科學有限公司 發光二極體質量傳遞設備及製造方法
JP7009194B2 (ja) * 2017-12-12 2022-01-25 株式会社ディスコ ウエーハ生成装置および搬送トレー
DE102018111450B4 (de) 2018-05-14 2024-06-20 Infineon Technologies Ag Verfahren zum Verarbeiten eines Breiter-Bandabstand-Halbleiterwafers, Verfahren zum Bilden einer Mehrzahl von dünnen Breiter-Bandabstand-Halbleiterwafern und Breiter-Bandabstand-Halbleiterwafer
JP7164396B2 (ja) * 2018-10-29 2022-11-01 株式会社ディスコ ウエーハ生成装置
CN113745094A (zh) * 2021-08-31 2021-12-03 顾赢速科技(合肥)有限公司 多层外延工艺制作薄碳化硅晶片圆的方法
CN113838778B (zh) * 2021-09-03 2023-12-05 北京中科镭特电子有限公司 一种激光解键合装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4524953B2 (ja) * 2001-05-18 2010-08-18 パナソニック株式会社 窒化物半導体基板の製造方法および窒化物半導体装置の製造方法
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
CN101477943B (zh) * 2008-01-04 2013-02-13 晶元光电股份有限公司 分离两种材料系统的方法
CN101555627B (zh) * 2009-04-30 2012-01-25 苏州纳晶光电有限公司 一种氮化镓基外延膜的激光剥离方法
JP5403754B2 (ja) * 2010-01-21 2014-01-29 スタンレー電気株式会社 半導体発光装置の製造方法
JP5596375B2 (ja) * 2010-03-08 2014-09-24 スタンレー電気株式会社 半導体発光素子の製造方法及び半導体発光素子
JP2012004353A (ja) * 2010-06-17 2012-01-05 Toshiba Corp 剥離装置および剥離方法

Also Published As

Publication number Publication date
KR101876588B1 (ko) 2018-07-09
TWI575590B (zh) 2017-03-21
KR20130121014A (ko) 2013-11-05
CN103378232A (zh) 2013-10-30
CN103378232B (zh) 2017-06-06
JP2013229508A (ja) 2013-11-07
TW201349321A (zh) 2013-12-01

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