JP5987275B2 - 固体撮像装置、固体撮像装置の製造方法、および電子機器 - Google Patents

固体撮像装置、固体撮像装置の製造方法、および電子機器 Download PDF

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JP5987275B2
JP5987275B2 JP2011162228A JP2011162228A JP5987275B2 JP 5987275 B2 JP5987275 B2 JP 5987275B2 JP 2011162228 A JP2011162228 A JP 2011162228A JP 2011162228 A JP2011162228 A JP 2011162228A JP 5987275 B2 JP5987275 B2 JP 5987275B2
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film
wiring
insulating layer
solid
imaging device
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Japanese (ja)
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JP2013026565A5 (enExample
JP2013026565A (ja
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健太郎 秋山
健太郎 秋山
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Sony Corp
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Sony Corp
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Priority to JP2011162228A priority Critical patent/JP5987275B2/ja
Priority to CN201610797377.3A priority patent/CN106449676A/zh
Priority to US13/547,698 priority patent/US9153490B2/en
Priority to CN201210241867.7A priority patent/CN103022062B/zh
Publication of JP2013026565A publication Critical patent/JP2013026565A/ja
Publication of JP2013026565A5 publication Critical patent/JP2013026565A5/ja
Priority to US14/841,958 priority patent/US9627429B2/en
Priority to US15/087,918 priority patent/US9525004B2/en
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Publication of JP5987275B2 publication Critical patent/JP5987275B2/ja
Priority to US15/370,818 priority patent/US10249674B2/en
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JP2011162228A 2011-07-19 2011-07-25 固体撮像装置、固体撮像装置の製造方法、および電子機器 Active JP5987275B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011162228A JP5987275B2 (ja) 2011-07-25 2011-07-25 固体撮像装置、固体撮像装置の製造方法、および電子機器
US13/547,698 US9153490B2 (en) 2011-07-19 2012-07-12 Solid-state imaging device, manufacturing method of solid-state imaging device, manufacturing method of semiconductor device, semiconductor device, and electronic device
CN201210241867.7A CN103022062B (zh) 2011-07-19 2012-07-12 固体摄像器件及其制造方法和电子设备
CN201610797377.3A CN106449676A (zh) 2011-07-19 2012-07-12 半导体装置和电子设备
US14/841,958 US9627429B2 (en) 2011-07-19 2015-09-01 Semiconductor device and electronic device having bonded substrates
US15/087,918 US9525004B2 (en) 2011-07-19 2016-03-31 Solid-state imaging device, manufacturing method of solid-state imaging device, manufacturing method of semiconductor device, semiconductor device, and electronic device
US15/370,818 US10249674B2 (en) 2011-07-19 2016-12-06 Semiconductor device and electronic apparatus including a semiconductor device having bonded sensor and logic substrates

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JP2011162228A JP5987275B2 (ja) 2011-07-25 2011-07-25 固体撮像装置、固体撮像装置の製造方法、および電子機器

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JP2013026565A JP2013026565A (ja) 2013-02-04
JP2013026565A5 JP2013026565A5 (enExample) 2014-09-18
JP5987275B2 true JP5987275B2 (ja) 2016-09-07

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI577001B (zh) * 2011-10-04 2017-04-01 Sony Corp 固體攝像裝置、固體攝像裝置之製造方法及電子機器
JP2015170702A (ja) * 2014-03-06 2015-09-28 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
WO2016194653A1 (ja) * 2015-06-05 2016-12-08 ソニー株式会社 撮像素子、電子機器、並びに、製造装置および方法
JP6986831B2 (ja) 2015-07-17 2021-12-22 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP2017130610A (ja) * 2016-01-22 2017-07-27 ソニー株式会社 イメージセンサ、製造方法、及び、電子機器
TW202038456A (zh) 2018-10-26 2020-10-16 日商索尼半導體解決方案公司 固態攝像元件、固態攝像元件封裝及電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4389626B2 (ja) * 2004-03-29 2009-12-24 ソニー株式会社 固体撮像素子の製造方法
JP5357441B2 (ja) * 2008-04-04 2013-12-04 キヤノン株式会社 固体撮像装置の製造方法
KR101010375B1 (ko) * 2008-08-06 2011-01-21 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP5985136B2 (ja) * 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
KR101648200B1 (ko) * 2009-10-22 2016-08-12 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP5442394B2 (ja) * 2009-10-29 2014-03-12 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
TWI515885B (zh) * 2009-12-25 2016-01-01 新力股份有限公司 半導體元件及其製造方法，及電子裝置

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