JP5967710B2 - プラズマエッチングの終点検出方法 - Google Patents

プラズマエッチングの終点検出方法 Download PDF

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JP5967710B2
JP5967710B2 JP2012215537A JP2012215537A JP5967710B2 JP 5967710 B2 JP5967710 B2 JP 5967710B2 JP 2012215537 A JP2012215537 A JP 2012215537A JP 2012215537 A JP2012215537 A JP 2012215537A JP 5967710 B2 JP5967710 B2 JP 5967710B2
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etching
plasma
end point
gas
protective film
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JP2014072269A5 (enExample
JP2014072269A (ja
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知行 野中
知行 野中
浩通 扇谷
浩通 扇谷
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Samco Inc
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Samco Inc
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JP2012215537A 2012-09-28 2012-09-28 プラズマエッチングの終点検出方法 Active JP5967710B2 (ja)

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JP2012215537A JP5967710B2 (ja) 2012-09-28 2012-09-28 プラズマエッチングの終点検出方法

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JP2012215537A JP5967710B2 (ja) 2012-09-28 2012-09-28 プラズマエッチングの終点検出方法

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JP2014072269A JP2014072269A (ja) 2014-04-21
JP2014072269A5 JP2014072269A5 (enExample) 2015-07-16
JP5967710B2 true JP5967710B2 (ja) 2016-08-10

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9640371B2 (en) * 2014-10-20 2017-05-02 Lam Research Corporation System and method for detecting a process point in multi-mode pulse processes
JP6356615B2 (ja) 2015-02-06 2018-07-11 東芝メモリ株式会社 半導体製造装置および半導体製造方法
JP2017079273A (ja) * 2015-10-21 2017-04-27 パナソニックＩｐマネジメント株式会社 プラズマ処理方法
US12046522B2 (en) 2022-02-18 2024-07-23 Applied Materials, Inc. Endpoint detection in low open area and/or high aspect ratio etch applications

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
JP4101280B2 (ja) * 2006-07-28 2008-06-18 住友精密工業株式会社 終点検出可能なプラズマエッチング方法及びプラズマエッチング装置
JP2008205436A (ja) * 2007-01-26 2008-09-04 Toshiba Corp 微細構造体の製造方法
JP5654359B2 (ja) * 2011-01-06 2015-01-14 株式会社アルバック プラズマエッチング方法、及びプラズマエッチング装置

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