JP5959551B2 - 送受信機信号絶縁および電圧固定法のための装置、および同装置を形成する方法 - Google Patents
送受信機信号絶縁および電圧固定法のための装置、および同装置を形成する方法 Download PDFInfo
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- JP5959551B2 JP5959551B2 JP2014015212A JP2014015212A JP5959551B2 JP 5959551 B2 JP5959551 B2 JP 5959551B2 JP 2014015212 A JP2014015212 A JP 2014015212A JP 2014015212 A JP2014015212 A JP 2014015212A JP 5959551 B2 JP5959551 B2 JP 5959551B2
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- type well
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- bipolar transistor
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/619—Combinations of lateral BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
- H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/766,541 | 2013-02-13 | ||
| US13/766,541 US9275991B2 (en) | 2013-02-13 | 2013-02-13 | Apparatus for transceiver signal isolation and voltage clamp |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014154883A JP2014154883A (ja) | 2014-08-25 |
| JP2014154883A5 JP2014154883A5 (enExample) | 2016-03-24 |
| JP5959551B2 true JP5959551B2 (ja) | 2016-08-02 |
Family
ID=50156548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014015212A Active JP5959551B2 (ja) | 2013-02-13 | 2014-01-30 | 送受信機信号絶縁および電圧固定法のための装置、および同装置を形成する方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9275991B2 (enExample) |
| EP (1) | EP2768022B1 (enExample) |
| JP (1) | JP5959551B2 (enExample) |
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| US10199369B2 (en) | 2016-03-04 | 2019-02-05 | Analog Devices, Inc. | Apparatus and methods for actively-controlled transient overstress protection with false condition shutdown |
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| US10734806B2 (en) | 2016-07-21 | 2020-08-04 | Analog Devices, Inc. | High voltage clamps with transient activation and activation release control |
| US10861845B2 (en) * | 2016-12-06 | 2020-12-08 | Analog Devices, Inc. | Active interface resistance modulation switch |
| US10319714B2 (en) | 2017-01-24 | 2019-06-11 | Analog Devices, Inc. | Drain-extended metal-oxide-semiconductor bipolar switch for electrical overstress protection |
| US10404059B2 (en) | 2017-02-09 | 2019-09-03 | Analog Devices, Inc. | Distributed switches to suppress transient electrical overstress-induced latch-up |
| US10608431B2 (en) | 2017-10-26 | 2020-03-31 | Analog Devices, Inc. | Silicon controlled rectifier dynamic triggering and shutdown via control signal amplification |
| TWI661530B (zh) * | 2018-02-13 | 2019-06-01 | 力晶積成電子製造股份有限公司 | 靜電放電保護元件 |
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| CN110620109B (zh) * | 2018-06-20 | 2021-11-02 | 台湾类比科技股份有限公司 | 高静电放电耐受力的静电保护元件布局结构 |
| TWI665802B (zh) * | 2018-08-08 | 2019-07-11 | 立錡科技股份有限公司 | 高壓元件及其製造方法 |
| US10581423B1 (en) | 2018-08-17 | 2020-03-03 | Analog Devices Global Unlimited Company | Fault tolerant low leakage switch |
| US11094688B2 (en) | 2018-08-23 | 2021-08-17 | Analog Devices International Unlimited Company | Isolation architecture |
| CN109103184B (zh) * | 2018-08-24 | 2023-05-26 | 电子科技大学 | 双向高维持电流esd防护器件 |
| US11387648B2 (en) | 2019-01-10 | 2022-07-12 | Analog Devices International Unlimited Company | Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces |
| US11004849B2 (en) | 2019-03-06 | 2021-05-11 | Analog Devices, Inc. | Distributed electrical overstress protection for large density and high data rate communication applications |
| DE102020111863A1 (de) | 2019-05-03 | 2020-11-05 | Analog Devices International Unlimited Company | Gegen elektrische Überlastung tolerante Mikrowellenverstärker |
| US11469717B2 (en) | 2019-05-03 | 2022-10-11 | Analog Devices International Unlimited Company | Microwave amplifiers tolerant to electrical overstress |
| US12032014B2 (en) | 2019-09-09 | 2024-07-09 | Analog Devices International Unlimited Company | Semiconductor device configured for gate dielectric monitoring |
| DE102020123481A1 (de) | 2019-09-09 | 2021-03-11 | Analog Devices International Unlimited Company | Halbleitervorrichtung, die zur gate-dielektrikum-überwachung ausgebildet ist |
| US11552190B2 (en) | 2019-12-12 | 2023-01-10 | Analog Devices International Unlimited Company | High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region |
| US11595036B2 (en) | 2020-04-30 | 2023-02-28 | Analog Devices, Inc. | FinFET thyristors for protecting high-speed communication interfaces |
| CN111696982B (zh) * | 2020-06-09 | 2023-10-03 | 深圳能芯半导体有限公司 | 一种基体分离n型功率管esd电路和设置方法 |
| US11626512B2 (en) * | 2021-01-15 | 2023-04-11 | Globalfoundries Singapore Pte. Ltd. | Electrostatic discharge protection devices and methods for fabricating electrostatic discharge protection devices |
| CN113838847B (zh) * | 2021-09-02 | 2023-04-07 | 电子科技大学 | 一种用于低压esd防护的双向dcscr器件 |
| JP7759855B2 (ja) * | 2022-08-10 | 2025-10-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US20240079482A1 (en) * | 2022-09-01 | 2024-03-07 | Globalfoundries U.S. Inc. | Gated protection device structures for an electrostatic discharge protection circuit |
| CN115831960B (zh) * | 2022-12-09 | 2025-08-26 | 湖南静芯微电子技术有限公司 | 一种强鲁棒性非对称双向可控硅静电防护器件及制作方法 |
| US20240234409A1 (en) * | 2023-01-10 | 2024-07-11 | Globalfoundries U.S. Inc. | Structure including n-type well over n-type deep well and between pair of p-type wells for esd protection |
| US12477836B2 (en) | 2023-12-08 | 2025-11-18 | Analog Devices, Inc. | Low capacitance silicon controlled rectifier topology for overvoltage protection |
| CN117832257B (zh) * | 2024-01-11 | 2024-11-05 | 深圳奥简科技有限公司 | 一种抑制漏电的n型mos管 |
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2013
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| Publication number | Publication date |
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| JP2014154883A (ja) | 2014-08-25 |
| US20140225228A1 (en) | 2014-08-14 |
| EP2768022B1 (en) | 2019-04-03 |
| US9275991B2 (en) | 2016-03-01 |
| EP2768022A2 (en) | 2014-08-20 |
| EP2768022A3 (en) | 2016-08-24 |
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