JP5955232B2 - 加熱炉 - Google Patents
加熱炉 Download PDFInfo
- Publication number
- JP5955232B2 JP5955232B2 JP2013002825A JP2013002825A JP5955232B2 JP 5955232 B2 JP5955232 B2 JP 5955232B2 JP 2013002825 A JP2013002825 A JP 2013002825A JP 2013002825 A JP2013002825 A JP 2013002825A JP 5955232 B2 JP5955232 B2 JP 5955232B2
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- Prior art keywords
- substrate
- heating
- gas
- hot plate
- solder
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- 238000010438 heat treatment Methods 0.000 title claims description 93
- 239000000758 substrate Substances 0.000 claims description 156
- 239000007789 gas Substances 0.000 claims description 100
- 238000001816 cooling Methods 0.000 claims description 41
- 238000005476 soldering Methods 0.000 claims description 30
- 229910000679 solder Inorganic materials 0.000 claims description 25
- 239000011261 inert gas Substances 0.000 claims description 21
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 2
- 230000003028 elevating effect Effects 0.000 description 23
- 230000007246 mechanism Effects 0.000 description 23
- 238000012546 transfer Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 12
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000000112 cooling gas Substances 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Furnace Details (AREA)
Description
9 作業室(作業スペース
37 昇降機構
38 ホットプレート(加熱装置)
38b 導入孔
39 赤外線ヒータ(補助加熱装置)
41 冷却装置
42 連結板(連結体)
43 昇降ピン
44 昇降シリンダ(アクチュエータ)
47 熱伝導面
48 固定ピン
49 流路
52 ガス供給装置
B 基板(ウェハ,シリコンウェハ)
S クリアランス
Claims (4)
- 基板(B)の表面のハンダを溶融させることにより、該基板(B)へのハンダ付を行う加熱炉において、
上記ハンダ付作業を行う作業部(2)内に作業スペース(9)を形成し、
前記基板(B)と対向する対向面を有して該基板(B)を加熱する加熱装置(38)を、該基板(B)の直下又は直上に設け、
前記加熱装置(38)は、該加熱装置(38)自身を加熱する発熱体を有し、
作業スペース(9)内に不活性ガスまたは還元ガスを導入する複数の導入孔(38b)が、加熱装置(38)の上記対向面に形成され、
作業スペース(9)内において加熱装置(38)の上記対向面に前記基板(B)を近接させた状態で、加熱を行う際、該基板(B)と上記対向面との間に、不活性ガスまたは還元ガスの流動を許容するクリアランス(S)が形成されるように前記作業部(2)を構成するにあたり、前記基板(B)と上記対向面とが非接触な状態で近接して両者の間に前記クリアランス(S)が形成されるように、該対向面から上方に突出した複数の昇降ピン(43)又は複数の固定ピン(48)のみによって、該基板(B)が下支えされ、
前記クリアランス(S)は、上記導入孔(38b)から該クリアランス(S)内に上方噴出された不活性ガスまたは還元ガスが、上下何れの方向への流動も同時に規制されて前記基板(B)の面方向に流動するサイズの隙間である
ことを特徴とする加熱炉。 - 前記導入孔(38b)を上下方向に形成し、
不活性ガスまたは還元ガスが注入される流路(49)を、加熱装置(38)内に横方向に形成し、
流路(49)内の上記不活性ガスまたは還元ガスが作業スペース(9)内に噴出されるように該流路(49)と導入孔(38b)とを連通させた
請求項1に記載の加熱炉。 - 記加熱装置(38)がホットプレートであり、
加熱された状態の不活性ガスまたは還元ガスが作業スペース(9)内に導入される
請求項2に記載の加熱炉。 - 表面のハンダが溶融しない温度で基板(B)を予備加熱する予備加熱手段と、
該予備加熱後に上記ハンダが溶融する温度で基板(B)を本加熱する本加熱手段と、
該本加熱後に上記ハンダが凝固する温度で基板(B)を冷却させる冷却手段とを有し、
本加熱手段は、上記クリアランス(S)が形成される状態で本加熱を行う
請求項1乃至3の何れかに記載の加熱炉。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013002825A JP5955232B2 (ja) | 2013-01-10 | 2013-01-10 | 加熱炉 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013002825A JP5955232B2 (ja) | 2013-01-10 | 2013-01-10 | 加熱炉 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012189571A Division JP5174272B1 (ja) | 2012-08-30 | 2012-08-30 | 加熱炉 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014049746A JP2014049746A (ja) | 2014-03-17 |
JP5955232B2 true JP5955232B2 (ja) | 2016-07-20 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013002825A Active JP5955232B2 (ja) | 2013-01-10 | 2013-01-10 | 加熱炉 |
Country Status (1)
Country | Link |
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JP (1) | JP5955232B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016067682A1 (ja) * | 2014-10-28 | 2016-05-06 | 株式会社Uacj | ろう付炉及びアルミニウム材のろう付方法 |
CN116423004B (zh) * | 2023-06-14 | 2023-08-25 | 北京中科科美科技股份有限公司 | 一种小型金属部件的真空钎焊炉 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003218512A (ja) * | 2002-01-17 | 2003-07-31 | Fujitsu Access Ltd | 電子部品交換装置 |
WO2008136524A1 (ja) * | 2007-05-07 | 2008-11-13 | Japan E. M. Co., Ltd. | 半田バンプ形成方法および半田バンプ形成装置 |
JP5103064B2 (ja) * | 2007-06-19 | 2012-12-19 | 株式会社タムラ製作所 | リフロー装置 |
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- 2013-01-10 JP JP2013002825A patent/JP5955232B2/ja active Active
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