JP5949094B2 - ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法 - Google Patents

ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法 Download PDF

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JP5949094B2
JP5949094B2 JP2012099948A JP2012099948A JP5949094B2 JP 5949094 B2 JP5949094 B2 JP 5949094B2 JP 2012099948 A JP2012099948 A JP 2012099948A JP 2012099948 A JP2012099948 A JP 2012099948A JP 5949094 B2 JP5949094 B2 JP 5949094B2
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meth
acrylate
sensitive composition
structural unit
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Japanese (ja)
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JP2013228526A (ja
Inventor
八代　隆郎
隆郎 八代
信司 松村
信司 松村
高瀬　英明
英明 高瀬
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JSR Corp
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JSR Corp
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Priority to JP2012099948A priority Critical patent/JP5949094B2/ja
Priority to CN2013101317368A priority patent/CN103376649A/zh
Priority to KR1020130042785A priority patent/KR102051898B1/ko
Priority to TW102114502A priority patent/TWI572627B/zh
Publication of JP2013228526A publication Critical patent/JP2013228526A/ja
Application granted granted Critical
Publication of JP5949094B2 publication Critical patent/JP5949094B2/ja
Priority to KR1020190154207A priority patent/KR20190134572A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2012099948A 2012-04-25 2012-04-25 ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法 Active JP5949094B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012099948A JP5949094B2 (ja) 2012-04-25 2012-04-25 ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法
CN2013101317368A CN103376649A (zh) 2012-04-25 2013-04-16 感放射线性组合物、显示元件用层间绝缘膜以及其形成方法
KR1020130042785A KR102051898B1 (ko) 2012-04-25 2013-04-18 감방사선성 조성물, 표시 소자용 층간 절연막 및 그 형성 방법
TW102114502A TWI572627B (zh) 2012-04-25 2013-04-24 感放射線性組成物、顯示元件用層間絕緣膜以及其形成方法
KR1020190154207A KR20190134572A (ko) 2012-04-25 2019-11-27 감방사선성 조성물, 표시 소자용 층간 절연막 및 그 형성 방법

Applications Claiming Priority (1)

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JP2012099948A JP5949094B2 (ja) 2012-04-25 2012-04-25 ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法

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JP2013228526A JP2013228526A (ja) 2013-11-07
JP5949094B2 true JP5949094B2 (ja) 2016-07-06

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JP2012099948A Active JP5949094B2 (ja) 2012-04-25 2012-04-25 ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法

Country Status (4)

Country Link
JP (1) JP5949094B2 (ko)
KR (2) KR102051898B1 (ko)
CN (1) CN103376649A (ko)
TW (1) TWI572627B (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3109703B1 (en) * 2014-02-21 2020-12-30 Tokyo Electron Limited Photosensitization chemical-amplification type resist material, and method for forming pattern using same
CN106030417B (zh) * 2014-02-21 2020-02-28 东京毅力科创株式会社 光增感化学放大型抗蚀剂材料及使用了其的图案形成方法、以及半导体器件、光刻用掩模和纳米压印用模板的制造方法
JP2016206503A (ja) * 2015-04-24 2016-12-08 Jsr株式会社 感放射線性樹脂組成物、赤外線遮蔽膜、その形成方法、及び固体撮像素子、照度センサー
JP7012424B2 (ja) * 2016-03-25 2022-02-14 東京応化工業株式会社 エネルギー感受性組成物、硬化物及び硬化物の製造方法
WO2018230388A1 (ja) * 2017-06-15 2018-12-20 積水化学工業株式会社 有機ｅｌ表示素子用封止剤
KR102177417B1 (ko) * 2017-12-31 2020-11-11 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 방법
JP7063173B2 (ja) * 2018-08-01 2022-05-09 Jsr株式会社 感放射線性組成物およびその用途
JP7180202B2 (ja) * 2018-08-21 2022-11-30 Jsr株式会社 硬化性組成物、硬化膜、表示素子及び硬化膜の形成方法
TWI795489B (zh) * 2018-12-14 2023-03-11 奇美實業股份有限公司 化學增幅型正型感光性樹脂組成物及其應用

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4269740B2 (ja) 2002-03-28 2009-05-27 住友化学株式会社 ポジ型化学増幅型レジスト組成物
JP4207604B2 (ja) 2003-03-03 2009-01-14 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの形成方法
TW200836002A (en) * 2006-12-19 2008-09-01 Cheil Ind Inc Photosensitive resin composition and organic insulating film produced using the same
JP5623896B2 (ja) * 2010-01-15 2014-11-12 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
WO2011111424A1 (ja) * 2010-03-11 2011-09-15 富士フイルム株式会社 ポジ型感光性樹脂組成物、硬化膜の形成方法、硬化膜、液晶表示装置、及び、有機ｅｌ表示装置
JP4591625B1 (ja) 2010-04-01 2010-12-01 Ｊｓｒ株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
JP5625460B2 (ja) 2010-04-15 2014-11-19 Jsr株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
CN102859439B (zh) * 2010-04-27 2017-06-30 Jsr株式会社 正型感射线性组合物、显示元件用层间绝缘膜及其形成方法
JP5325278B2 (ja) * 2011-08-31 2013-10-23 富士フイルム株式会社 ポジ型感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機ｅｌ表示装置、及び、液晶表示装置
JP5542851B2 (ja) * 2012-02-16 2014-07-09 富士フイルム株式会社 感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機ｅｌ表示装置および液晶表示装置
KR20140139499A (ko) * 2012-02-29 2014-12-05 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 액정 표시 장치 및 유기 el 표시 장치

Also Published As

Publication number Publication date
KR20190134572A (ko) 2019-12-04
TWI572627B (zh) 2017-03-01
JP2013228526A (ja) 2013-11-07
KR20130120391A (ko) 2013-11-04
KR102051898B1 (ko) 2019-12-04
CN103376649A (zh) 2013-10-30
TW201343687A (zh) 2013-11-01

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