TWI572627B - 感放射線性組成物、顯示元件用層間絕緣膜以及其形成方法 - Google Patents

感放射線性組成物、顯示元件用層間絕緣膜以及其形成方法 Download PDF

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Publication number
TWI572627B
TWI572627B TW102114502A TW102114502A TWI572627B TW I572627 B TWI572627 B TW I572627B TW 102114502 A TW102114502 A TW 102114502A TW 102114502 A TW102114502 A TW 102114502A TW I572627 B TWI572627 B TW I572627B
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Taiwan
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group
acrylate
meth
radiation
compound
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TW102114502A
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English (en)
Chinese (zh)
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TW201343687A (zh
Inventor
八代隆郎
松村信司
高瀬英明
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Jsr股份有限公司
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Publication of TW201343687A publication Critical patent/TW201343687A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW102114502A 2012-04-25 2013-04-24 感放射線性組成物、顯示元件用層間絕緣膜以及其形成方法 TWI572627B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012099948A JP5949094B2 (ja) 2012-04-25 2012-04-25 ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法

Publications (2)

Publication Number Publication Date
TW201343687A TW201343687A (zh) 2013-11-01
TWI572627B true TWI572627B (zh) 2017-03-01

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TW102114502A TWI572627B (zh) 2012-04-25 2013-04-24 感放射線性組成物、顯示元件用層間絕緣膜以及其形成方法

Country Status (4)

Country Link
JP (1) JP5949094B2 (ko)
KR (2) KR102051898B1 (ko)
CN (1) CN103376649A (ko)
TW (1) TWI572627B (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111562720B (zh) * 2014-02-21 2023-09-29 东京毅力科创株式会社 光增感化学放大型抗蚀剂材料、图案形成方法、半导体器件、光刻用掩模、纳米压印用模板
EP3109703B1 (en) * 2014-02-21 2020-12-30 Tokyo Electron Limited Photosensitization chemical-amplification type resist material, and method for forming pattern using same
JP2016206503A (ja) * 2015-04-24 2016-12-08 Jsr株式会社 感放射線性樹脂組成物、赤外線遮蔽膜、その形成方法、及び固体撮像素子、照度センサー
JP7012424B2 (ja) * 2016-03-25 2022-02-14 東京応化工業株式会社 エネルギー感受性組成物、硬化物及び硬化物の製造方法
CN110731127B (zh) * 2017-06-15 2022-08-19 积水化学工业株式会社 有机el显示元件用密封剂
JP6730417B2 (ja) * 2017-12-31 2020-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物および方法
JP7063173B2 (ja) * 2018-08-01 2022-05-09 Jsr株式会社 感放射線性組成物およびその用途
JP7180202B2 (ja) * 2018-08-21 2022-11-30 Jsr株式会社 硬化性組成物、硬化膜、表示素子及び硬化膜の形成方法
TWI795489B (zh) * 2018-12-14 2023-03-11 奇美實業股份有限公司 化學增幅型正型感光性樹脂組成物及其應用

Citations (1)

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TW201140232A (en) * 2010-01-15 2011-11-16 Fujifilm Corp Photosensitive resin composition, cured film and method of producing the same, organic EL display device, and liquid crystal display device

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JP4269740B2 (ja) 2002-03-28 2009-05-27 住友化学株式会社 ポジ型化学増幅型レジスト組成物
JP4207604B2 (ja) 2003-03-03 2009-01-14 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの形成方法
TW200836002A (en) * 2006-12-19 2008-09-01 Cheil Ind Inc Photosensitive resin composition and organic insulating film produced using the same
CN102792227B (zh) * 2010-03-11 2014-11-12 富士胶片株式会社 正型感光性树脂组合物、固化膜的形成方法、固化膜、液晶显示装置、以及有机el显示装置
JP4591625B1 (ja) 2010-04-01 2010-12-01 Ｊｓｒ株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
JP5625460B2 (ja) 2010-04-15 2014-11-19 Jsr株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
JP5761182B2 (ja) * 2010-04-27 2015-08-12 Jsr株式会社 ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法
JP5325278B2 (ja) * 2011-08-31 2013-10-23 富士フイルム株式会社 ポジ型感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機ｅｌ表示装置、及び、液晶表示装置
JP5542851B2 (ja) * 2012-02-16 2014-07-09 富士フイルム株式会社 感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機ｅｌ表示装置および液晶表示装置
KR20140139499A (ko) * 2012-02-29 2014-12-05 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 액정 표시 장치 및 유기 el 표시 장치

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
TW201140232A (en) * 2010-01-15 2011-11-16 Fujifilm Corp Photosensitive resin composition, cured film and method of producing the same, organic EL display device, and liquid crystal display device

Also Published As

Publication number Publication date
KR102051898B1 (ko) 2019-12-04
JP5949094B2 (ja) 2016-07-06
JP2013228526A (ja) 2013-11-07
TW201343687A (zh) 2013-11-01
KR20190134572A (ko) 2019-12-04
CN103376649A (zh) 2013-10-30
KR20130120391A (ko) 2013-11-04

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