JP5948500B2 - ヘテロ接合電界効果トランジスタ - Google Patents
ヘテロ接合電界効果トランジスタ Download PDFInfo
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- 230000005669 field effect Effects 0.000 title claims description 17
- 239000011229 interlayer Substances 0.000 claims description 23
- 239000010410 layer Substances 0.000 description 35
- 229910002704 AlGaN Inorganic materials 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 11
- 230000002441 reversible effect Effects 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000006378 damage Effects 0.000 description 7
- 230000005533 two-dimensional electron gas Effects 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000012216 screening Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016570 AlCu Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/41725—Source or drain electrodes for field effect devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
ヘテロ接合を有するGaN系積層体と、
上記GaN系積層体上にフィンガー状に互いに平行に形成された複数のドレイン電極と、
上記GaN系積層体上に、上記複数のドレイン電極の配列方向に上記複数のドレイン電極と交互に配列するようにフィンガー状に互いに平行に形成された複数のソース電極と、
平面視において、上記ドレイン電極と上記ソース電極との間にそれぞれ形成されたゲート電極と、
上記GaN系積層体上に、上記ソース電極、上記ドレイン電極、および上記ゲート電極を覆うように形成された層間絶縁膜と、
上記各ソース電極の少なくとも一部の領域上、かつ、上記層間絶縁膜に形成され、上記ソース電極の長手方向に延在している第1コンタクト部と、
上記各ドレイン電極の少なくとも一部の領域上、かつ、上記層間絶縁膜に形成され、上記ドレイン電極の長手方向に延在している第2コンタクト部と、
を備え、
上記第1コンタクト部の長手方向の長さは、上記ソース電極の長手方向の長さよりも短く、
上記第2コンタクト部の長手方向の長さは、上記ドレイン電極の長手方向の長さよりも短く、
上記各ドレイン電極において、上記第2コンタクト部の端から上記第2コンタクト部より外側の上記ドレイン電極の端までの距離は、上記第1コンタクト部の端から上記第1コンタクト部より外側の上記ソース電極の端までの距離よりも長いことを特徴としている。
上記層間絶縁膜上に形成され、上記ソース電極に上記第1コンタクト部を介して電気的に接続されたソース配線を備えている。
上記ゲート電極は、平面視において、上記ドレイン電極と上記ソース電極との間で上記ドレイン電極の長手方向に延在していると共に、上記ドレイン電極の長手方向の両側の端部を囲むように延在している。
図1は、本発明の第1実施形態であるGaN系のHFETの電極構造を模式的に示す平面図である。また、図2は、図1のB−B線断面を示す図である。また、図3は、図1のA−A線断面を示す図である。
次に、本発明の第2実施形態のGaN系のHFETを説明する。
ヘテロ接合を有するGaN系積層体5と、
上記GaN系積層体5上にフィンガー状に互いに平行に形成された複数のドレイン電極11,61と、
上記GaN系積層体5上に、上記複数のドレイン電極11,61の配列方向に上記複数のドレイン電極11,61と交互に配列するように、フィンガー状に互いに平行に形成された複数のソース電極12,62と、
平面視において、上記ドレイン電極11,61と上記ソース電極12,62との間にそれぞれ形成されたゲート電極13と、
上記GaN系積層体5上に、上記ソース電極12,62、上記ドレイン電極11,61、および上記ゲート電極13を覆うように形成された層間絶縁膜8と、
上記各ソース電極12,62の少なくとも一部の領域上、かつ、上記層間絶縁膜8に形成され、上記ソース電極12,62の長手方向に延在している第1コンタクト部20a,70aと、
上記各ドレイン電極11,61の少なくとも一部の領域上、かつ、上記層間絶縁膜8に形成され、上記ドレイン電極11,61の長手方向に延在している第2コンタクト部15a,65aと、
を備え、
上記第1コンタクト部20a,70aの長手方向の長さは、上記ソース電極12,62の長手方向の長さよりも短く、
上記第2コンタクト部15a,65aの長手方向の長さは、上記ドレイン電極11,61の長手方向の長さよりも短く、
上記各ドレイン電極11,61において、上記第2コンタクト部15a,65aの端17A,17B,67A,67Bから上記第2コンタクト部15a,65aより外側の上記ドレイン電極11,61の端11A,11B,61A,61Bまでの距離Xは、上記第1コンタクト部20a,70aの端18A,18B,68A,68Bから上記第1コンタクト部20a,70aより外側の上記ソース電極12,62の端12A,12B,62A,62Bまでのそれぞれの距離Yよりも長いことを特徴としている。
上記層間絶縁膜8上に形成され、上記ソース電極12,62に上記第1コンタクト部20a,70aを介して電気的に接続されたソース配線20を備える。
上記ゲート電極13は、平面視において、上記ドレイン電極11,61と上記ソース電極12,62との間で上記ドレイン電極11,61の長手方向に延在していると共に、上記ドレイン電極11,61の長手方向の両側の端11A,11B,61A,61Bを囲むように延在している。
2 アンドープGaN層
3 アンドープAlGaN層
5 GaN系積層体
6 2DEG(2次元電子ガス)
7 保護膜
8 層間絶縁膜
11,61 ドレイン電極
11A,11B,61A,61B 端
12,62 ソース電極
12A,12B,62A,62B 端
13 ゲート電極
13A 長手方向延在部
13B,13C 湾曲部
13D 枝部
13E 連接部
15 ドレイン配線
15a,65a 第2コンタクト部
17,18,19 コンタクトホール
17A,17B,67A,67B 端
18A,18B,68A,68B 端
20 ソース配線
20a,70a 第1コンタクト部
X,Y 距離
Claims (3)
- ヘテロ接合を有するGaN系積層体(5)と、
上記GaN系積層体(5)上にフィンガー状に互いに平行に形成された複数のドレイン電極(11,61)と、
上記GaN系積層体(5)上に、上記複数のドレイン電極(11,61)の配列方向に上記複数のドレイン電極(11,61)と交互に配列するように、フィンガー状に互いに平行に形成された複数のソース電極(12,62)と、
平面視において、上記ドレイン電極(11,61)と上記ソース電極(12,62)との間にそれぞれ形成されたゲート電極(13)と、
上記GaN系積層体(5)上に、上記ソース電極(12,62)、上記ドレイン電極(11,61)、および上記ゲート電極(13)を覆うように形成された層間絶縁膜(8)と、
上記各ソース電極(12,62)の少なくとも一部の領域上、かつ、上記層間絶縁膜(8)に形成され、上記ソース電極(12,62)の長手方向に延在している第1コンタクト部(20a,70a)と、
上記各ドレイン電極(11,61)の少なくとも一部の領域上、かつ、上記層間絶縁膜(8)に形成され、上記ドレイン電極(11,61)の長手方向に延在している第2コンタクト部(15a,65a)と、
を備え、
上記第1コンタクト部(20a,70a)の長手方向の長さは、上記ソース電極(12,62)の長手方向の長さよりも短く、
上記第2コンタクト部(15a,65a)の長手方向の長さは、上記ドレイン電極(11,61)の長手方向の長さよりも短く、
上記各ドレイン電極(11,61)において、上記第2コンタクト部(15a,65a)の端(17A,17B,67A,67B)から上記第2コンタクト部(15a,65a)より外側の上記ドレイン電極(11,61)の端(11A,11B,61A,61B)までの距離Xは、上記第1コンタクト部(20a,70a)の端(18A,18B,68A,68B)から上記第1コンタクト部(20a,70a)より外側の上記ソース電極(12,62)の端(12A,12B,62A,62B)までのそれぞれの距離Yよりも長く、
上記第2コンタクト部(15a,65a)の長手方向の長さは、上記第1コンタクト部(20a,70a)の長手方向の長さよりも短く、
上記第2コンタクト部(15a,65a)は、上記第1コンタクト部(20a,70a)の長手方向において、上記第1コンタクト部(20a,70a)の両端(18A,18B,68A,68B)の間に位置し、
上記ソース電極(12,62)の長手方向の長さ(L2)は、上記ドレイン電極(11,61)の長手方向の長さ(L1)よりも短く、
上記ソース電極(12,62)は、上記ドレイン電極(11,61)の長手方向において、上記ドレイン電極(11,61)の両端(11A,11B,61A,61B)の間に位置していることを特徴とするヘテロ接合電界効果トランジスタ。 - 請求項1に記載のヘテロ接合電界効果トランジスタにおいて、
上記層間絶縁膜(8)上に形成され、上記ソース電極(12,62)に上記第1コンタクト部(20a,70a)を介して電気的に接続されたソース配線(20)を備えることを特徴とするヘテロ接合電界効果トランジスタ。 - 請求項1または2に記載のヘテロ接合電界効果トランジスタにおいて、
上記ゲート電極(13)は、
平面視において、上記ドレイン電極(11,61)と上記ソース電極(12,62)との間で上記ドレイン電極(11,61)の長手方向に延在していると共に、上記ドレイン電極(11,61)の長手方向の両側の端(11A,11B,61A,61B)を囲むように延在していることを特徴とするヘテロ接合電界効果トランジスタ。
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JP2013124546 | 2013-06-13 | ||
JP2013124546 | 2013-06-13 | ||
PCT/JP2014/055016 WO2014199671A1 (ja) | 2013-06-13 | 2014-02-28 | ヘテロ接合電界効果トランジスタ |
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JP5948500B2 true JP5948500B2 (ja) | 2016-07-06 |
JPWO2014199671A1 JPWO2014199671A1 (ja) | 2017-02-23 |
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US9882041B1 (en) * | 2016-11-17 | 2018-01-30 | Texas Instruments Incorporated | HEMT having conduction barrier between drain fingertip and source |
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