JP5939118B2 - 基板処理装置、基板処理方法及び記憶媒体 - Google Patents

基板処理装置、基板処理方法及び記憶媒体 Download PDF

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Publication number
JP5939118B2
JP5939118B2 JP2012220632A JP2012220632A JP5939118B2 JP 5939118 B2 JP5939118 B2 JP 5939118B2 JP 2012220632 A JP2012220632 A JP 2012220632A JP 2012220632 A JP2012220632 A JP 2012220632A JP 5939118 B2 JP5939118 B2 JP 5939118B2
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Japan
Prior art keywords
solvent
substrate
liquid reservoir
substrate processing
unit
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JP2012220632A
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English (en)
Japanese (ja)
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JP2014075391A5 (enExample
JP2014075391A (ja
Inventor
上田　健一
健一 上田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2012220632A priority Critical patent/JP5939118B2/ja
Priority to KR1020130114384A priority patent/KR101696709B1/ko
Publication of JP2014075391A publication Critical patent/JP2014075391A/ja
Publication of JP2014075391A5 publication Critical patent/JP2014075391A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2012220632A 2012-10-02 2012-10-02 基板処理装置、基板処理方法及び記憶媒体 Expired - Fee Related JP5939118B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012220632A JP5939118B2 (ja) 2012-10-02 2012-10-02 基板処理装置、基板処理方法及び記憶媒体
KR1020130114384A KR101696709B1 (ko) 2012-10-02 2013-09-26 기판 처리 장치, 기판 처리 방법 및 기억 매체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012220632A JP5939118B2 (ja) 2012-10-02 2012-10-02 基板処理装置、基板処理方法及び記憶媒体

Publications (3)

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JP2014075391A JP2014075391A (ja) 2014-04-24
JP2014075391A5 JP2014075391A5 (enExample) 2014-12-18
JP5939118B2 true JP5939118B2 (ja) 2016-06-22

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JP2012220632A Expired - Fee Related JP5939118B2 (ja) 2012-10-02 2012-10-02 基板処理装置、基板処理方法及び記憶媒体

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JP (1) JP5939118B2 (enExample)
KR (1) KR101696709B1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202314405A (zh) * 2021-06-15 2023-04-01 美商蘭姆研究公司 用於晶圓中的乾式顯影副產物揮發的乾式顯影設備及方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04328667A (ja) 1991-04-27 1992-11-17 Nec Corp ２ポートｒａｍデータ送受方式及び装置
JP2004031750A (ja) * 2002-06-27 2004-01-29 Tokyo Electron Ltd 基板処理装置および基板処理方法
JP4328667B2 (ja) * 2003-06-06 2009-09-09 東京エレクトロン株式会社 基板の処理膜の表面荒れを改善する方法及び基板の処理装置
JP2005259862A (ja) * 2004-03-10 2005-09-22 Mitsui Eng & Shipbuild Co Ltd レジスト除去方法、レジスト除去剤噴射装置、およびレジスト除去装置
JP2012087983A (ja) * 2010-10-19 2012-05-10 Tokyo Electron Ltd 流体加熱装置及び基板処理装置
JP5278469B2 (ja) * 2011-03-03 2013-09-04 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体

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JP2014075391A (ja) 2014-04-24
KR101696709B1 (ko) 2017-01-16
KR20140043674A (ko) 2014-04-10

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