JP5936361B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5936361B2
JP5936361B2 JP2012003691A JP2012003691A JP5936361B2 JP 5936361 B2 JP5936361 B2 JP 5936361B2 JP 2012003691 A JP2012003691 A JP 2012003691A JP 2012003691 A JP2012003691 A JP 2012003691A JP 5936361 B2 JP5936361 B2 JP 5936361B2
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JP
Japan
Prior art keywords
sample
power supply
hole
insulating film
socket
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012003691A
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English (en)
Japanese (ja)
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JP2013143512A (ja
JP2013143512A5 (enExample
Inventor
浩平 佐藤
浩平 佐藤
和則 中本
和則 中本
大本　豊
豊 大本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2012003691A priority Critical patent/JP5936361B2/ja
Priority to US13/410,331 priority patent/US9384946B2/en
Publication of JP2013143512A publication Critical patent/JP2013143512A/ja
Publication of JP2013143512A5 publication Critical patent/JP2013143512A5/ja
Application granted granted Critical
Publication of JP5936361B2 publication Critical patent/JP5936361B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H10P72/0441—
    • H10P72/722—
    • H10P72/7624—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2012003691A 2012-01-12 2012-01-12 プラズマ処理装置 Active JP5936361B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012003691A JP5936361B2 (ja) 2012-01-12 2012-01-12 プラズマ処理装置
US13/410,331 US9384946B2 (en) 2012-01-12 2012-03-02 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012003691A JP5936361B2 (ja) 2012-01-12 2012-01-12 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2013143512A JP2013143512A (ja) 2013-07-22
JP2013143512A5 JP2013143512A5 (enExample) 2015-03-05
JP5936361B2 true JP5936361B2 (ja) 2016-06-22

Family

ID=48779160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012003691A Active JP5936361B2 (ja) 2012-01-12 2012-01-12 プラズマ処理装置

Country Status (2)

Country Link
US (1) US9384946B2 (enExample)
JP (1) JP5936361B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6312451B2 (ja) * 2014-01-29 2018-04-18 東京エレクトロン株式会社 給電部カバー構造及び半導体製造装置
JP6308871B2 (ja) * 2014-05-28 2018-04-11 新光電気工業株式会社 静電チャック及び半導体・液晶製造装置
JP6317183B2 (ja) * 2014-05-30 2018-04-25 日本特殊陶業株式会社 半導体製造装置用部品
JP6424049B2 (ja) * 2014-09-12 2018-11-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR102684670B1 (ko) * 2016-01-19 2024-07-15 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
DE102017208081B3 (de) * 2017-05-12 2018-10-11 centrotherm international AG Kontaktierungsvorrichtung zur Verbindung eines Waferbootes mit einer elektrischen Leistungsversorgung
JP7052796B2 (ja) * 2017-07-28 2022-04-12 住友電気工業株式会社 シャワーヘッド及びその製造方法
JP7149068B2 (ja) * 2017-12-21 2022-10-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US11121010B2 (en) 2018-02-15 2021-09-14 Tokyo Electron Limited Plasma processing apparatus
JP7122212B2 (ja) * 2018-02-15 2022-08-19 東京エレクトロン株式会社 プラズマ処理装置
JP7090465B2 (ja) * 2018-05-10 2022-06-24 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP7090481B2 (ja) * 2018-06-15 2022-06-24 新光電気工業株式会社 静電チャック及びその製造方法
KR102608957B1 (ko) * 2018-08-27 2023-12-01 삼성전자주식회사 플라즈마 처리 장치
JP7285154B2 (ja) * 2019-07-16 2023-06-01 日本特殊陶業株式会社 保持装置
US20210381101A1 (en) * 2020-06-03 2021-12-09 Applied Materials, Inc. Substrate processing system
US12331984B2 (en) * 2021-05-10 2025-06-17 Applied Materials, Inc. Cryogenic micro-zone electrostatic chuck connector assembly
JP7557429B2 (ja) * 2021-05-27 2024-09-27 東京エレクトロン株式会社 プラズマ処理装置
JP7579758B2 (ja) * 2021-06-28 2024-11-08 東京エレクトロン株式会社 基板支持体、基板支持体アセンブリ及びプラズマ処理装置
WO2024201683A1 (ja) * 2023-03-27 2024-10-03 株式会社日立ハイテク プラズマ処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764950A (en) 1980-10-08 1982-04-20 Fujitsu Ltd Electrostatically attracting device and method therefor
JPH0478133A (ja) * 1990-07-20 1992-03-12 Tokyo Electron Ltd プラズマ処理装置
US5625526A (en) * 1993-06-01 1997-04-29 Tokyo Electron Limited Electrostatic chuck
JPH0774234A (ja) * 1993-06-28 1995-03-17 Tokyo Electron Ltd 静電チャックの電極構造、この組み立て方法、この組み立て治具及び処理装置
JPH08162518A (ja) * 1994-12-06 1996-06-21 Fujitsu Ltd 半導体装置の製造装置
US6072685A (en) * 1998-05-22 2000-06-06 Applied Materials, Inc. Electrostatic chuck having an electrical connector with housing
US6151203A (en) * 1998-12-14 2000-11-21 Applied Materials, Inc. Connectors for an electrostatic chuck and combination thereof
US20020022403A1 (en) * 1999-08-06 2002-02-21 Wing L. Cheng Connectors for an eletrostatic chuck
US6490144B1 (en) * 1999-11-29 2002-12-03 Applied Materials, Inc. Support for supporting a substrate in a process chamber
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
JP3993408B2 (ja) * 2001-10-05 2007-10-17 株式会社巴川製紙所 静電チャック装置、その組立方法および静電チャック装置用部材
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
JP4276404B2 (ja) * 2002-03-25 2009-06-10 株式会社クリエイティブ テクノロジー 静電チャックの電極構造

Also Published As

Publication number Publication date
US20130180662A1 (en) 2013-07-18
US9384946B2 (en) 2016-07-05
JP2013143512A (ja) 2013-07-22

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