JP5934501B2 - 走査電子線装置およびそれを用いた寸法計測方法 - Google Patents

走査電子線装置およびそれを用いた寸法計測方法 Download PDF

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Publication number
JP5934501B2
JP5934501B2 JP2011271863A JP2011271863A JP5934501B2 JP 5934501 B2 JP5934501 B2 JP 5934501B2 JP 2011271863 A JP2011271863 A JP 2011271863A JP 2011271863 A JP2011271863 A JP 2011271863A JP 5934501 B2 JP5934501 B2 JP 5934501B2
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Prior art keywords
wafer
electron beam
height
objective lens
acceleration voltage
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JP2011271863A
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English (en)
Japanese (ja)
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JP2013125583A5 (enExample
JP2013125583A (ja
Inventor
矢野　資
資 矢野
早田　康成
康成 早田
福田　宗行
宗行 福田
勝則 小貫
勝則 小貫
源 川野
川野　　源
直正 鈴木
直正 鈴木
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2011271863A priority Critical patent/JP5934501B2/ja
Priority to US14/364,392 priority patent/US9644955B2/en
Priority to PCT/JP2012/080509 priority patent/WO2013088944A1/ja
Publication of JP2013125583A publication Critical patent/JP2013125583A/ja
Publication of JP2013125583A5 publication Critical patent/JP2013125583A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H01J2237/281—Bottom of trenches or holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
JP2011271863A 2011-12-13 2011-12-13 走査電子線装置およびそれを用いた寸法計測方法 Active JP5934501B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011271863A JP5934501B2 (ja) 2011-12-13 2011-12-13 走査電子線装置およびそれを用いた寸法計測方法
US14/364,392 US9644955B2 (en) 2011-12-13 2012-11-26 Scanning electron beam device with focus adjustment based on acceleration voltage and dimension measurement method using same
PCT/JP2012/080509 WO2013088944A1 (ja) 2011-12-13 2012-11-26 走査電子線装置およびそれを用いた寸法計測方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011271863A JP5934501B2 (ja) 2011-12-13 2011-12-13 走査電子線装置およびそれを用いた寸法計測方法

Publications (3)

Publication Number Publication Date
JP2013125583A JP2013125583A (ja) 2013-06-24
JP2013125583A5 JP2013125583A5 (enExample) 2014-11-27
JP5934501B2 true JP5934501B2 (ja) 2016-06-15

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JP2011271863A Active JP5934501B2 (ja) 2011-12-13 2011-12-13 走査電子線装置およびそれを用いた寸法計測方法

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Country Link
US (1) US9644955B2 (enExample)
JP (1) JP5934501B2 (enExample)
WO (1) WO2013088944A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9932664B2 (en) * 2012-11-06 2018-04-03 Purdue Research Foundation Methods for directed irradiation synthesis with ion and thermal beams
JP5965851B2 (ja) * 2013-02-15 2016-08-10 株式会社日立ハイテクノロジーズ 試料観察装置
JP6230831B2 (ja) * 2013-07-08 2017-11-15 株式会社日立ハイテクノロジーズ 荷電粒子線装置および画像取得方法
US9958257B2 (en) * 2015-09-21 2018-05-01 Kla-Tencor Corporation Increasing dynamic range of a height sensor for inspection and metrology
JP7040927B2 (ja) * 2017-12-01 2022-03-23 株式会社日立ハイテク 荷電粒子線装置、及び荷電粒子線装置における撮像条件調整方法
IL283996B1 (en) * 2018-12-28 2025-10-01 Asml Netherlands Bv Methods and systems for focusing charged particle beams
JP7154593B2 (ja) * 2019-02-15 2022-10-18 株式会社日立ハイテクサイエンス 複合荷電粒子ビーム装置、及び制御方法
JP7308581B2 (ja) * 2019-10-18 2023-07-14 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、複合荷電粒子ビーム装置、及び荷電粒子ビーム装置の制御方法
JP7342696B2 (ja) * 2019-12-26 2023-09-12 株式会社ニューフレアテクノロジー 電子ビーム検査装置
JP7455676B2 (ja) 2020-06-05 2024-03-26 株式会社日立ハイテク 電子顕微鏡および電子顕微鏡のフォーカス調整方法
JP2022021104A (ja) * 2020-07-21 2022-02-02 株式会社日立ハイテク 荷電粒子線装置
WO2022144156A1 (en) * 2020-12-30 2022-07-07 Asml Netherlands B.V. Dual focus soluton for sem metrology tools
CN119826746B (zh) * 2025-01-07 2025-10-24 芯恩（青岛）集成电路有限公司 机台载具平整度量测方法及装置、存储介质和终端

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5594245A (en) * 1990-10-12 1997-01-14 Hitachi, Ltd. Scanning electron microscope and method for dimension measuring by using the same
JPH04269613A (ja) * 1991-02-25 1992-09-25 Nippon Telegr & Teleph Corp <Ntt> 荷電ビームの焦点合わせ方法
JPH1186769A (ja) * 1997-09-02 1999-03-30 Nikon Corp 走査電子顕微鏡の自動焦点合わせ装置および方法
JP3429988B2 (ja) * 1997-10-30 2003-07-28 株式会社日立製作所 走査電子顕微鏡
CA2358946C (en) * 1998-12-31 2006-11-21 Meang K. Chia Decorative jewelry article
JP4727777B2 (ja) 1999-05-24 2011-07-20 株式会社日立製作所 走査形電子顕微鏡による測長方法
JP3684943B2 (ja) * 1999-10-19 2005-08-17 株式会社日立製作所 ビーム走査形検査装置
US6521891B1 (en) 1999-09-03 2003-02-18 Applied Materials, Inc. Focusing method and system
JP3951590B2 (ja) * 2000-10-27 2007-08-01 株式会社日立製作所 荷電粒子線装置
JP4587742B2 (ja) * 2004-08-23 2010-11-24 株式会社日立ハイテクノロジーズ 荷電粒子線顕微方法及び荷電粒子線応用装置
JP5075431B2 (ja) * 2007-02-28 2012-11-21 株式会社日立ハイテクノロジーズ 帯電測定方法、焦点調整方法、及び走査電子顕微鏡
JP5474312B2 (ja) * 2007-06-20 2014-04-16 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置及びその制御方法
JP4357567B2 (ja) * 2008-01-07 2009-11-04 株式会社日立製作所 走査形電子顕微鏡による測長方法

Also Published As

Publication number Publication date
WO2013088944A1 (ja) 2013-06-20
JP2013125583A (ja) 2013-06-24
US9644955B2 (en) 2017-05-09
US20140339425A1 (en) 2014-11-20

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