JP5927619B2 - プラズマリアクタ - Google Patents
プラズマリアクタ Download PDFInfo
- Publication number
- JP5927619B2 JP5927619B2 JP2013508441A JP2013508441A JP5927619B2 JP 5927619 B2 JP5927619 B2 JP 5927619B2 JP 2013508441 A JP2013508441 A JP 2013508441A JP 2013508441 A JP2013508441 A JP 2013508441A JP 5927619 B2 JP5927619 B2 JP 5927619B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- exhaust
- plasma
- plasma reactor
- vacuum vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 97
- 230000000694 effects Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 239000006185 dispersion Substances 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 131
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 238000005086 pumping Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000007667 floating Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- 230000002860 competitive effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005288 electromagnetic effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33188710P | 2010-05-06 | 2010-05-06 | |
| US61/331,887 | 2010-05-06 | ||
| PCT/EP2011/056820 WO2011138239A1 (en) | 2010-05-06 | 2011-04-29 | Plasma reactor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013527610A JP2013527610A (ja) | 2013-06-27 |
| JP2013527610A5 JP2013527610A5 (enExample) | 2014-06-05 |
| JP5927619B2 true JP5927619B2 (ja) | 2016-06-01 |
Family
ID=44148910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013508441A Expired - Fee Related JP5927619B2 (ja) | 2010-05-06 | 2011-04-29 | プラズマリアクタ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20130052369A1 (enExample) |
| EP (1) | EP2567392A1 (enExample) |
| JP (1) | JP5927619B2 (enExample) |
| CN (2) | CN202246850U (enExample) |
| WO (1) | WO2011138239A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137521A (zh) * | 2011-12-02 | 2013-06-05 | 中国科学院微电子研究所 | 一种进气装置 |
| TWI480417B (zh) * | 2012-11-02 | 2015-04-11 | Ind Tech Res Inst | 具氣幕之氣體噴灑裝置及其薄膜沉積裝置 |
| US20150087108A1 (en) * | 2013-09-26 | 2015-03-26 | Tel Solar Ag | Process, Film, and Apparatus for Top Cell for a PV Device |
| US9859088B2 (en) * | 2015-04-30 | 2018-01-02 | Lam Research Corporation | Inter-electrode gap variation methods for compensating deposition non-uniformity |
| JP6903662B2 (ja) * | 2015-08-31 | 2021-07-14 | ジーレイ スイッツァーランド エスアー | モノリシックcmos集積ピクセル検出器を備えた光子計数コーンビームct装置 |
| CN114093739B (zh) * | 2020-08-24 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种气体流量调节装置和调节方法及等离子体处理装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2589168B1 (fr) | 1985-10-25 | 1992-07-17 | Solems Sa | Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma |
| US4913790A (en) * | 1988-03-25 | 1990-04-03 | Tokyo Electron Limited | Treating method |
| JPH0776781A (ja) * | 1993-09-10 | 1995-03-20 | Matsushita Electric Ind Co Ltd | プラズマ気相成長装置 |
| US6228438B1 (en) | 1999-08-10 | 2001-05-08 | Unakis Balzers Aktiengesellschaft | Plasma reactor for the treatment of large size substrates |
| US6502530B1 (en) | 2000-04-26 | 2003-01-07 | Unaxis Balzers Aktiengesellschaft | Design of gas injection for the electrode in a capacitively coupled RF plasma reactor |
| US6433484B1 (en) * | 2000-08-11 | 2002-08-13 | Lam Research Corporation | Wafer area pressure control |
| KR101033123B1 (ko) * | 2004-06-30 | 2011-05-11 | 엘지디스플레이 주식회사 | 액정표시장치의 제조를 위한 챔버형 장치 |
| JP5027667B2 (ja) * | 2004-11-24 | 2012-09-19 | エリコン・ソーラー・アクチェンゲゼルシャフト,トリュープバッハ | 超大面積基板用真空処理チャンバ |
| JP2006303309A (ja) * | 2005-04-22 | 2006-11-02 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| US8043430B2 (en) * | 2006-12-20 | 2011-10-25 | Lam Research Corporation | Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber |
| US8522715B2 (en) * | 2008-01-08 | 2013-09-03 | Lam Research Corporation | Methods and apparatus for a wide conductance kit |
| WO2009104732A1 (ja) * | 2008-02-20 | 2009-08-27 | 東京エレクトロン株式会社 | ガス供給装置 |
| US20090286397A1 (en) * | 2008-05-15 | 2009-11-19 | Lam Research Corporation | Selective inductive double patterning |
| MY176065A (en) * | 2009-01-20 | 2020-07-23 | Mitsubishi Materials Corp | Apparatus for producing trichlorosilane and method for producing trichlorosilane |
-
2011
- 2011-04-29 WO PCT/EP2011/056820 patent/WO2011138239A1/en not_active Ceased
- 2011-04-29 EP EP11716567A patent/EP2567392A1/en not_active Withdrawn
- 2011-04-29 JP JP2013508441A patent/JP5927619B2/ja not_active Expired - Fee Related
- 2011-04-29 US US13/695,500 patent/US20130052369A1/en not_active Abandoned
- 2011-05-05 CN CN2011201396629U patent/CN202246850U/zh not_active Expired - Fee Related
- 2011-05-05 CN CN2011101152544A patent/CN102237247A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN102237247A (zh) | 2011-11-09 |
| US20130052369A1 (en) | 2013-02-28 |
| EP2567392A1 (en) | 2013-03-13 |
| WO2011138239A1 (en) | 2011-11-10 |
| JP2013527610A (ja) | 2013-06-27 |
| CN202246850U (zh) | 2012-05-30 |
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