JP2013527610A5 - - Google Patents

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Publication number
JP2013527610A5
JP2013527610A5 JP2013508441A JP2013508441A JP2013527610A5 JP 2013527610 A5 JP2013527610 A5 JP 2013527610A5 JP 2013508441 A JP2013508441 A JP 2013508441A JP 2013508441 A JP2013508441 A JP 2013508441A JP 2013527610 A5 JP2013527610 A5 JP 2013527610A5
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JP
Japan
Prior art keywords
exhaust
gas
plasma reactor
vacuum vessel
exhaust hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013508441A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013527610A (ja
JP5927619B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2011/056820 external-priority patent/WO2011138239A1/en
Publication of JP2013527610A publication Critical patent/JP2013527610A/ja
Publication of JP2013527610A5 publication Critical patent/JP2013527610A5/ja
Application granted granted Critical
Publication of JP5927619B2 publication Critical patent/JP5927619B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013508441A 2010-05-06 2011-04-29 プラズマリアクタ Expired - Fee Related JP5927619B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33188710P 2010-05-06 2010-05-06
US61/331,887 2010-05-06
PCT/EP2011/056820 WO2011138239A1 (en) 2010-05-06 2011-04-29 Plasma reactor

Publications (3)

Publication Number Publication Date
JP2013527610A JP2013527610A (ja) 2013-06-27
JP2013527610A5 true JP2013527610A5 (enExample) 2014-06-05
JP5927619B2 JP5927619B2 (ja) 2016-06-01

Family

ID=44148910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013508441A Expired - Fee Related JP5927619B2 (ja) 2010-05-06 2011-04-29 プラズマリアクタ

Country Status (5)

Country Link
US (1) US20130052369A1 (enExample)
EP (1) EP2567392A1 (enExample)
JP (1) JP5927619B2 (enExample)
CN (2) CN202246850U (enExample)
WO (1) WO2011138239A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137521A (zh) * 2011-12-02 2013-06-05 中国科学院微电子研究所 一种进气装置
TWI480417B (zh) * 2012-11-02 2015-04-11 財團法人工業技術研究院 具氣幕之氣體噴灑裝置及其薄膜沉積裝置
US20150087108A1 (en) * 2013-09-26 2015-03-26 Tel Solar Ag Process, Film, and Apparatus for Top Cell for a PV Device
US9859088B2 (en) * 2015-04-30 2018-01-02 Lam Research Corporation Inter-electrode gap variation methods for compensating deposition non-uniformity
WO2017037527A1 (en) * 2015-08-31 2017-03-09 G-Ray Switzerland Sa Photon counting cone-beam ct apparatus with monolithic cmos integrated pixel detectors
CN114093739B (zh) * 2020-08-24 2024-03-12 中微半导体设备(上海)股份有限公司 一种气体流量调节装置和调节方法及等离子体处理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2589168B1 (fr) 1985-10-25 1992-07-17 Solems Sa Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma
US4913790A (en) * 1988-03-25 1990-04-03 Tokyo Electron Limited Treating method
JPH0776781A (ja) * 1993-09-10 1995-03-20 Matsushita Electric Ind Co Ltd プラズマ気相成長装置
US6228438B1 (en) 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6433484B1 (en) * 2000-08-11 2002-08-13 Lam Research Corporation Wafer area pressure control
KR101033123B1 (ko) * 2004-06-30 2011-05-11 엘지디스플레이 주식회사 액정표시장치의 제조를 위한 챔버형 장치
ES2301073T3 (es) * 2004-11-24 2008-06-16 Oc Oerlikon Balzers Ag Camara de procesamiento al vacio para sustratos de area muy grande.
JP2006303309A (ja) * 2005-04-22 2006-11-02 Hitachi High-Technologies Corp プラズマ処理装置
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US8522715B2 (en) * 2008-01-08 2013-09-03 Lam Research Corporation Methods and apparatus for a wide conductance kit
JP5233734B2 (ja) * 2008-02-20 2013-07-10 東京エレクトロン株式会社 ガス供給装置、成膜装置及び成膜方法
US20090286397A1 (en) * 2008-05-15 2009-11-19 Lam Research Corporation Selective inductive double patterning
KR101687833B1 (ko) * 2009-01-20 2016-12-19 미쓰비시 마테리알 가부시키가이샤 트리클로로실란 제조 장치 및 트리클로로실란 제조 방법

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