JP2013527610A5 - - Google Patents

Download PDF

Info

Publication number
JP2013527610A5
JP2013527610A5 JP2013508441A JP2013508441A JP2013527610A5 JP 2013527610 A5 JP2013527610 A5 JP 2013527610A5 JP 2013508441 A JP2013508441 A JP 2013508441A JP 2013508441 A JP2013508441 A JP 2013508441A JP 2013527610 A5 JP2013527610 A5 JP 2013527610A5
Authority
JP
Japan
Prior art keywords
exhaust
gas
plasma reactor
vacuum vessel
exhaust hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013508441A
Other languages
English (en)
Japanese (ja)
Other versions
JP5927619B2 (ja
JP2013527610A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2011/056820 external-priority patent/WO2011138239A1/en
Publication of JP2013527610A publication Critical patent/JP2013527610A/ja
Publication of JP2013527610A5 publication Critical patent/JP2013527610A5/ja
Application granted granted Critical
Publication of JP5927619B2 publication Critical patent/JP5927619B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013508441A 2010-05-06 2011-04-29 プラズマリアクタ Expired - Fee Related JP5927619B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33188710P 2010-05-06 2010-05-06
US61/331,887 2010-05-06
PCT/EP2011/056820 WO2011138239A1 (en) 2010-05-06 2011-04-29 Plasma reactor

Publications (3)

Publication Number Publication Date
JP2013527610A JP2013527610A (ja) 2013-06-27
JP2013527610A5 true JP2013527610A5 (enExample) 2014-06-05
JP5927619B2 JP5927619B2 (ja) 2016-06-01

Family

ID=44148910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013508441A Expired - Fee Related JP5927619B2 (ja) 2010-05-06 2011-04-29 プラズマリアクタ

Country Status (5)

Country Link
US (1) US20130052369A1 (enExample)
EP (1) EP2567392A1 (enExample)
JP (1) JP5927619B2 (enExample)
CN (2) CN102237247A (enExample)
WO (1) WO2011138239A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137521A (zh) * 2011-12-02 2013-06-05 中国科学院微电子研究所 一种进气装置
TWI480417B (zh) * 2012-11-02 2015-04-11 Ind Tech Res Inst 具氣幕之氣體噴灑裝置及其薄膜沉積裝置
WO2015048501A2 (en) * 2013-09-26 2015-04-02 Tel Solar Ag Process, film, and apparatus for top cell for a pv device
US9859088B2 (en) * 2015-04-30 2018-01-02 Lam Research Corporation Inter-electrode gap variation methods for compensating deposition non-uniformity
EP3345220B1 (en) * 2015-08-31 2022-03-30 G-Ray Switzerland SA Photon counting cone-beam ct apparatus with monolithic cmos integrated pixel detectors
CN114093739B (zh) * 2020-08-24 2024-03-12 中微半导体设备(上海)股份有限公司 一种气体流量调节装置和调节方法及等离子体处理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2589168B1 (fr) 1985-10-25 1992-07-17 Solems Sa Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma
US4913790A (en) * 1988-03-25 1990-04-03 Tokyo Electron Limited Treating method
JPH0776781A (ja) * 1993-09-10 1995-03-20 Matsushita Electric Ind Co Ltd プラズマ気相成長装置
US6228438B1 (en) 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6433484B1 (en) * 2000-08-11 2002-08-13 Lam Research Corporation Wafer area pressure control
KR101033123B1 (ko) * 2004-06-30 2011-05-11 엘지디스플레이 주식회사 액정표시장치의 제조를 위한 챔버형 장치
CN101728206B (zh) * 2004-11-24 2011-11-23 欧瑞康太阳能股份公司(特吕巴赫) 用于非常大面积基片的真空处理室
JP2006303309A (ja) * 2005-04-22 2006-11-02 Hitachi High-Technologies Corp プラズマ処理装置
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US8522715B2 (en) * 2008-01-08 2013-09-03 Lam Research Corporation Methods and apparatus for a wide conductance kit
WO2009104732A1 (ja) * 2008-02-20 2009-08-27 東京エレクトロン株式会社 ガス供給装置
US20090286397A1 (en) * 2008-05-15 2009-11-19 Lam Research Corporation Selective inductive double patterning
CN101798086B (zh) * 2009-01-20 2013-07-24 三菱综合材料株式会社 三氯硅烷制造装置以及三氯硅烷制造方法

Similar Documents

Publication Publication Date Title
JP2013527610A5 (enExample)
USD694790S1 (en) Baffle plate for manufacturing semiconductor
USD871609S1 (en) Electrode plate peripheral ring for a plasma processing apparatus
USD665491S1 (en) Deposition chamber cover ring
USD658935S1 (en) Parmesan cheese container cover
USD868993S1 (en) Electrode plate for a plasma processing apparatus
USD785750S1 (en) Handle end of filter cartridge
USD606952S1 (en) Plasma inducing plate for semiconductor deposition apparatus
USD731845S1 (en) Gas oven range
JP2018533673A5 (enExample)
USD694791S1 (en) Baffle plate for manufacturing semiconductor
USD777812S1 (en) Liquid cooled plasma torch electrode
USD668351S1 (en) Adjustable enclosure covering
TWD178424S (zh) 用於半導體製造設備的氣流控制板
USD776177S1 (en) Air cooled plasma torch electrode
WO2008070181A3 (en) Mid-chamber gas distribution plate, tuned plasma control grid and electrode
JP2012049376A5 (enExample)
USD672010S1 (en) Adjustable chemical vapor deposition showerhead assembly
JP2015183224A5 (enExample)
JP2014175669A5 (enExample)
JP2011517116A5 (enExample)
EA201290093A1 (ru) Способ и устройство для изготовления изделий из титана
JP2013049924A5 (enExample)
WO2007076195A3 (en) Small volume symmetric flow single wafer ald apparatus
USD702654S1 (en) Plasma power transfer rod for a semiconductor deposition apparatus