JP5922549B2 - 結晶半導体膜の製造方法および製造装置 - Google Patents

結晶半導体膜の製造方法および製造装置 Download PDF

Info

Publication number
JP5922549B2
JP5922549B2 JP2012219756A JP2012219756A JP5922549B2 JP 5922549 B2 JP5922549 B2 JP 5922549B2 JP 2012219756 A JP2012219756 A JP 2012219756A JP 2012219756 A JP2012219756 A JP 2012219756A JP 5922549 B2 JP5922549 B2 JP 5922549B2
Authority
JP
Japan
Prior art keywords
irradiation
energy density
semiconductor film
pulse
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012219756A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014072496A (ja
Inventor
純一 次田
純一 次田
政志 町田
政志 町田
石煥 鄭
石煥 鄭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Steel Works Ltd
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Priority to JP2012219756A priority Critical patent/JP5922549B2/ja
Priority to KR1020157008543A priority patent/KR102108024B1/ko
Priority to CN201380051586.8A priority patent/CN104718600B/zh
Priority to PCT/JP2013/076501 priority patent/WO2014054564A1/ja
Priority to SG11201502546VA priority patent/SG11201502546VA/en
Priority to TW102135385A priority patent/TWI582833B/zh
Publication of JP2014072496A publication Critical patent/JP2014072496A/ja
Application granted granted Critical
Publication of JP5922549B2 publication Critical patent/JP5922549B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP2012219756A 2012-10-01 2012-10-01 結晶半導体膜の製造方法および製造装置 Expired - Fee Related JP5922549B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012219756A JP5922549B2 (ja) 2012-10-01 2012-10-01 結晶半導体膜の製造方法および製造装置
KR1020157008543A KR102108024B1 (ko) 2012-10-01 2013-09-30 결정 반도체막의 제조방법 및 제조장치
CN201380051586.8A CN104718600B (zh) 2012-10-01 2013-09-30 结晶半导体膜的制造方法及制造装置
PCT/JP2013/076501 WO2014054564A1 (ja) 2012-10-01 2013-09-30 結晶半導体膜の製造方法および製造装置
SG11201502546VA SG11201502546VA (en) 2012-10-01 2013-09-30 Manufacturing method and manufacturing apparatus of crystal semiconductor film
TW102135385A TWI582833B (zh) 2012-10-01 2013-09-30 結晶半導體膜之製造方法以及製造裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012219756A JP5922549B2 (ja) 2012-10-01 2012-10-01 結晶半導体膜の製造方法および製造装置

Publications (2)

Publication Number Publication Date
JP2014072496A JP2014072496A (ja) 2014-04-21
JP5922549B2 true JP5922549B2 (ja) 2016-05-24

Family

ID=50434891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012219756A Expired - Fee Related JP5922549B2 (ja) 2012-10-01 2012-10-01 結晶半導体膜の製造方法および製造装置

Country Status (6)

Country Link
JP (1) JP5922549B2 (ko)
KR (1) KR102108024B1 (ko)
CN (1) CN104718600B (ko)
SG (1) SG11201502546VA (ko)
TW (1) TWI582833B (ko)
WO (1) WO2014054564A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6096228B2 (ja) * 2015-01-09 2017-03-15 株式会社日本製鋼所 半導体膜の表面ムラ検出装置、レーザアニール装置および半導体膜の表面ムラ検出方法
EP3718148B1 (en) * 2017-11-29 2022-11-16 Nichia Corporation Method for producing semiconductor light emitting element
CN111247626A (zh) * 2017-12-21 2020-06-05 极光先进雷射株式会社 激光照射方法和激光照射系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3301054B2 (ja) * 1996-02-13 2002-07-15 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JP3306300B2 (ja) 1996-06-20 2002-07-24 三洋電機株式会社 半導体膜のレーザーアニール方法
WO2003043070A1 (en) * 2001-11-12 2003-05-22 Sony Corporation Laser annealing device and thin-film transistor manufacturing method
JP2005277007A (ja) * 2004-03-24 2005-10-06 Hitachi Ltd 多結晶半導体膜製造方法とその装置および画像表示パネル
CN104882371B (zh) * 2008-01-07 2018-01-26 株式会社 Ihi 激光退火方法以及装置
JP2012015445A (ja) * 2010-07-05 2012-01-19 Japan Steel Works Ltd:The レーザアニール処理装置およびレーザアニール処理方法
SG188277A1 (en) * 2010-08-31 2013-04-30 Japan Steel Works Ltd Laser annealing apparatus and laser annealing method

Also Published As

Publication number Publication date
KR20150060746A (ko) 2015-06-03
JP2014072496A (ja) 2014-04-21
WO2014054564A1 (ja) 2014-04-10
TW201421544A (zh) 2014-06-01
TWI582833B (zh) 2017-05-11
CN104718600A (zh) 2015-06-17
SG11201502546VA (en) 2015-05-28
CN104718600B (zh) 2018-04-27
KR102108024B1 (ko) 2020-05-07

Similar Documents

Publication Publication Date Title
WO2012004903A1 (ja) レーザアニール処理装置およびレーザアニール処理方法
US20110309370A1 (en) Systems and methods for the crystallization of thin films
US20080030877A1 (en) Systems and methods for optimizing the crystallization of amorphous silicon
JP5922549B2 (ja) 結晶半導体膜の製造方法および製造装置
WO2008072454A1 (ja) 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置
TWI521607B (zh) 結晶質半導體的製造方法以及雷射退火裝置
JP5904590B2 (ja) 結晶質半導体の製造方法および結晶質半導体の製造装置
JP2004207691A (ja) 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置
JP5907530B2 (ja) レーザアニール方法およびレーザアニール装置
JP4947667B2 (ja) 結晶半導体膜の製造方法
JP5594741B2 (ja) 結晶質膜の製造方法および結晶質膜製造装置
JP2009004629A (ja) 多結晶半導体膜形成方法及び多結晶半導体膜形成装置
WO2014080728A1 (ja) レーザ処理方法およびレーザ処理装置
JP2009111206A (ja) レーザアニール方法
TWI435390B (zh) 結晶質膜的製造方法以及製造裝置
JP6687497B2 (ja) 結晶半導体膜製造方法、結晶半導体膜製造装置および結晶半導体膜製造装置の制御方法
JP2009032814A (ja) レーザ光照射装置および結晶成長方法
JP2007005412A (ja) ポリシリコン膜の形成方法
WO2019075454A1 (en) SYSTEMS AND METHODS FOR BEAM POINT CRYSTALLIZATION AND LINEAR BEAM
JP2005072487A (ja) 半導体膜のレーザアニーリング方法
JP2006190897A (ja) 半導体デバイス、その製造方法および製造装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140320

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150603

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150803

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160323

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160414

R150 Certificate of patent or registration of utility model

Ref document number: 5922549

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees