SG11201502546VA - Manufacturing method and manufacturing apparatus of crystal semiconductor film - Google Patents

Manufacturing method and manufacturing apparatus of crystal semiconductor film

Info

Publication number
SG11201502546VA
SG11201502546VA SG11201502546VA SG11201502546VA SG11201502546VA SG 11201502546V A SG11201502546V A SG 11201502546VA SG 11201502546V A SG11201502546V A SG 11201502546VA SG 11201502546V A SG11201502546V A SG 11201502546VA SG 11201502546V A SG11201502546V A SG 11201502546VA
Authority
SG
Singapore
Prior art keywords
manufacturing
semiconductor film
crystal semiconductor
manufacturing apparatus
crystal
Prior art date
Application number
SG11201502546VA
Inventor
Junichi Shida
Masashi Machida
Suk-Hwan Chung
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Publication of SG11201502546VA publication Critical patent/SG11201502546VA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686Pulsed laser beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
SG11201502546VA 2012-10-01 2013-09-30 Manufacturing method and manufacturing apparatus of crystal semiconductor film SG11201502546VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012219756A JP5922549B2 (en) 2012-10-01 2012-10-01 Crystal semiconductor film manufacturing method and manufacturing apparatus
PCT/JP2013/076501 WO2014054564A1 (en) 2012-10-01 2013-09-30 Method and apparatus for manufacturing crystal semiconductor film

Publications (1)

Publication Number Publication Date
SG11201502546VA true SG11201502546VA (en) 2015-05-28

Family

ID=50434891

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201502546VA SG11201502546VA (en) 2012-10-01 2013-09-30 Manufacturing method and manufacturing apparatus of crystal semiconductor film

Country Status (6)

Country Link
JP (1) JP5922549B2 (en)
KR (1) KR102108024B1 (en)
CN (1) CN104718600B (en)
SG (1) SG11201502546VA (en)
TW (1) TWI582833B (en)
WO (1) WO2014054564A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6096228B2 (en) * 2015-01-09 2017-03-15 株式会社日本製鋼所 Semiconductor film surface unevenness detection apparatus, laser annealing apparatus, and semiconductor film surface unevenness detection method
KR102563724B1 (en) * 2017-11-29 2023-08-07 니치아 카가쿠 고교 가부시키가이샤 Manufacturing method of semiconductor light emitting device
WO2019123611A1 (en) * 2017-12-21 2019-06-27 ギガフォトン株式会社 Laser irradiation method and laser irradiation system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3301054B2 (en) * 1996-02-13 2002-07-15 株式会社半導体エネルギー研究所 Laser irradiation device and laser irradiation method
JP3306300B2 (en) 1996-06-20 2002-07-24 三洋電機株式会社 Laser annealing method for semiconductor film
KR20040052468A (en) * 2001-11-12 2004-06-23 소니 가부시끼 가이샤 Laser annealing device and thin-film transistor manufacturing method
JP2005277007A (en) * 2004-03-24 2005-10-06 Hitachi Ltd Polycrystalline semiconductor film manufacturing method, apparatus therefor, and image display panel
JP5437079B2 (en) * 2008-01-07 2014-03-12 株式会社Ihi Laser annealing method and apparatus
JP2012015445A (en) * 2010-07-05 2012-01-19 Japan Steel Works Ltd:The Laser anneal processing unit and laser anneal processing method
KR20130100996A (en) * 2010-08-31 2013-09-12 가부시끼가이샤 니혼 세이꼬쇼 Laser annealing device and laser annealing method

Also Published As

Publication number Publication date
WO2014054564A1 (en) 2014-04-10
JP2014072496A (en) 2014-04-21
CN104718600B (en) 2018-04-27
KR20150060746A (en) 2015-06-03
TWI582833B (en) 2017-05-11
JP5922549B2 (en) 2016-05-24
KR102108024B1 (en) 2020-05-07
TW201421544A (en) 2014-06-01
CN104718600A (en) 2015-06-17

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