SG11201502546VA - Manufacturing method and manufacturing apparatus of crystal semiconductor film - Google Patents
Manufacturing method and manufacturing apparatus of crystal semiconductor filmInfo
- Publication number
- SG11201502546VA SG11201502546VA SG11201502546VA SG11201502546VA SG11201502546VA SG 11201502546V A SG11201502546V A SG 11201502546VA SG 11201502546V A SG11201502546V A SG 11201502546VA SG 11201502546V A SG11201502546V A SG 11201502546VA SG 11201502546V A SG11201502546V A SG 11201502546VA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- semiconductor film
- crystal semiconductor
- manufacturing apparatus
- crystal
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000013078 crystal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012219756A JP5922549B2 (en) | 2012-10-01 | 2012-10-01 | Crystal semiconductor film manufacturing method and manufacturing apparatus |
PCT/JP2013/076501 WO2014054564A1 (en) | 2012-10-01 | 2013-09-30 | Method and apparatus for manufacturing crystal semiconductor film |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201502546VA true SG11201502546VA (en) | 2015-05-28 |
Family
ID=50434891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201502546VA SG11201502546VA (en) | 2012-10-01 | 2013-09-30 | Manufacturing method and manufacturing apparatus of crystal semiconductor film |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP5922549B2 (en) |
KR (1) | KR102108024B1 (en) |
CN (1) | CN104718600B (en) |
SG (1) | SG11201502546VA (en) |
TW (1) | TWI582833B (en) |
WO (1) | WO2014054564A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6096228B2 (en) * | 2015-01-09 | 2017-03-15 | 株式会社日本製鋼所 | Semiconductor film surface unevenness detection apparatus, laser annealing apparatus, and semiconductor film surface unevenness detection method |
KR102563724B1 (en) * | 2017-11-29 | 2023-08-07 | 니치아 카가쿠 고교 가부시키가이샤 | Manufacturing method of semiconductor light emitting device |
WO2019123611A1 (en) * | 2017-12-21 | 2019-06-27 | ギガフォトン株式会社 | Laser irradiation method and laser irradiation system |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3301054B2 (en) * | 1996-02-13 | 2002-07-15 | 株式会社半導体エネルギー研究所 | Laser irradiation device and laser irradiation method |
JP3306300B2 (en) | 1996-06-20 | 2002-07-24 | 三洋電機株式会社 | Laser annealing method for semiconductor film |
KR20040052468A (en) * | 2001-11-12 | 2004-06-23 | 소니 가부시끼 가이샤 | Laser annealing device and thin-film transistor manufacturing method |
JP2005277007A (en) * | 2004-03-24 | 2005-10-06 | Hitachi Ltd | Polycrystalline semiconductor film manufacturing method, apparatus therefor, and image display panel |
JP5437079B2 (en) * | 2008-01-07 | 2014-03-12 | 株式会社Ihi | Laser annealing method and apparatus |
JP2012015445A (en) * | 2010-07-05 | 2012-01-19 | Japan Steel Works Ltd:The | Laser anneal processing unit and laser anneal processing method |
KR20130100996A (en) * | 2010-08-31 | 2013-09-12 | 가부시끼가이샤 니혼 세이꼬쇼 | Laser annealing device and laser annealing method |
-
2012
- 2012-10-01 JP JP2012219756A patent/JP5922549B2/en not_active Expired - Fee Related
-
2013
- 2013-09-30 KR KR1020157008543A patent/KR102108024B1/en active IP Right Grant
- 2013-09-30 SG SG11201502546VA patent/SG11201502546VA/en unknown
- 2013-09-30 TW TW102135385A patent/TWI582833B/en active
- 2013-09-30 CN CN201380051586.8A patent/CN104718600B/en active Active
- 2013-09-30 WO PCT/JP2013/076501 patent/WO2014054564A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2014054564A1 (en) | 2014-04-10 |
JP2014072496A (en) | 2014-04-21 |
CN104718600B (en) | 2018-04-27 |
KR20150060746A (en) | 2015-06-03 |
TWI582833B (en) | 2017-05-11 |
JP5922549B2 (en) | 2016-05-24 |
KR102108024B1 (en) | 2020-05-07 |
TW201421544A (en) | 2014-06-01 |
CN104718600A (en) | 2015-06-17 |
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