JP5882937B2 - ポリフッ化ビニリデン背面シートを有する光起電モジュール - Google Patents
ポリフッ化ビニリデン背面シートを有する光起電モジュール Download PDFInfo
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- JP5882937B2 JP5882937B2 JP2013079751A JP2013079751A JP5882937B2 JP 5882937 B2 JP5882937 B2 JP 5882937B2 JP 2013079751 A JP2013079751 A JP 2013079751A JP 2013079751 A JP2013079751 A JP 2013079751A JP 5882937 B2 JP5882937 B2 JP 5882937B2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Laminated Bodies (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
Description
a)外側透明グレージング材料と、
b)カプセル封入相互接続太陽電池と、
c)最外背面層を含むポリフッ化ビニリデン(PVDF)組成物を含む背面シートと
を含む光起電モジュールまたは太陽光発電装置に関する。
−官能化PVDF層//LOTADER ADX1200//PETまたはPETG//
−PVDF/アクリルブレンド//LOTADER//PVDF/アクリルブレンド
−PVDF/LOTADER/PVDF
−PVDFホモポリマー単層
−PVDF/HFPコポリマー単層
−PVDFコポリマー/アルミニウムホイル/PVDFコポリマー
表1に示す配合物を用いて、溶液コーティング配合物を調製した。この配合物を、ペイントシェーカーで125グラムの4mmガラスビーズと共に中身を30分間振とうすることにより混合した。このコーティングは架橋しない。このコーティングを、SKCフィルムよりSH−22として入手可能な(これは、接着力を改善するために化学処理されている)5ミルのPETに、5ミルのブレードを用いて、コートした。空気中で5分間流してから、3分間、350°Fで、強制空気オーブンにおいてオーブン硬化した。乾燥コーティング厚さは、約1ミルである。コートしたフィルムを、水に85℃で72時間浸漬し、乾燥し、ASTM D3359に定義された一般手順を用いて、クロスハッチ接着力を試験した。接着力Iを、テープを適用し、除去した後に保持されたパーセントで記録した。100%の値は、平方の全てが基板にまだ接着したままであることを意味している。50%の値は、平方の50%が基板に保持されていることを意味している。
分散液コーティングの実施例を、アクリルを架橋し、かつ処理済みPETと結合可能とさせるために、KYNAR 500粉末、官能化アルキルおよび架橋剤により配合した。表2の配合物を、30分間、125gの4mmのガラスビーズと、実施例1と同様のペイントシェーカーで混合した。コーティングを、SKC(SH22)より入手可能な5ミルのPETフィルムにコートした。室温で5分間流した後、3分間、350°Fでオーブン硬化した。フィルム積層体を、85℃で水に72時間浸漬し、平方の80〜90%が基板に保持されるようにして実施例1と同様に、クロスハッチ接着力を試験した。これは優れた接着力を示し、接着力は、焼成温度を最適化することにより高めることができることが分かる。
比較例として、実施例2と同様の配合物を調製した(表3参照)。
水性コーティングを、Arkemaアクリル変性フルオロポリマー技術に基づいて配合した。以下に示した配合物において、顔料濃縮物を、Cowles高速ミキサーを用いて、2000rpmで15分間、4000rpmで30分間動作させて生成した。ラテックス配合物を、低速混合攪拌器を用いて、500rpmで10分間混合し、増粘剤を、記載した通り、2アリコートで添加した。次に、これらを、低速攪拌器で、さらに10分間、一緒にブレンドし、ろ過し、実施例1と同様に、5ミルのドローダウンブレードを用いて、約1ミルの乾燥コーティング厚さまで、同じ予備処理済みPETにコートした。試料を、室温で10分間流してから、10分間、55℃でオーブン焼成した。試料を、水に85℃で72時間浸漬し、実施例1と同様にコーティング接着力を試験した。基板の平方の100%の保持により示されるように、優れた接着力であった。
Claims (6)
- c)外側透明グレージング材料と、
d)カプセル封入相互接続太陽電池と、
c)官能化ポリフッ化ビニリデン(PVDF)組成物を含む背面シートとを含み、ポリフッ化ビニリデン組成物が、背面シート基板に、水性コーティング組成物として適用される光起電モジュールであって、該PVDF組成物は、官能化アクリル変性フルオロポリマーを含み、ここで、そのフルオロポリマー部分は、該アクリル変性フルオロポリマーの少なくとも50重量%を構成し、かつ、フッ化ビニリデンモノマー単位と1〜29重量%のヘキサフルオロプロペンモノマー単位とのコポリマーであり、該アクリル変性フルオロポリマーの該アクリル部分が官能化アクリルモノマー単位を含む、光起電モジュール。 - 前記背面シート基板が、ポリエチレンテレフタレートまたはポリブチレンテレフタレート基板である請求項1に記載の光起電モジュール。
- 背面シート基板が、化学的に処理されて、PVDFコーティングの接着が改善される請求項1に記載の光起電モジュール。
- 前記PVDFコーティング組成物が、アクリル変性フルオロポリマー水性分散液である請求項1に記載の光起電モジュール。
- 前記コーティング組成物が、2〜33重量パーセントの架橋剤を含む請求項1に記載の光起電モジュール。
- 前記PVDFが、130℃を超える融点を有するホモポリマーまたはコポリマーである請求項1に記載の光起電モジュール。
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LAPS | Cancellation because of no payment of annual fees |