JP5881388B2 - 半導体装置及び半導体装置の作製方法 - Google Patents

半導体装置及び半導体装置の作製方法 Download PDF

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JP5881388B2
JP5881388B2 JP2011259074A JP2011259074A JP5881388B2 JP 5881388 B2 JP5881388 B2 JP 5881388B2 JP 2011259074 A JP2011259074 A JP 2011259074A JP 2011259074 A JP2011259074 A JP 2011259074A JP 5881388 B2 JP5881388 B2 JP 5881388B2
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film
insulating film
oxide semiconductor
gate electrode
source
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JP2013115182A (ja
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耕生 野田
耕生 野田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2011259074A 2011-11-28 2011-11-28 半導体装置及び半導体装置の作製方法 Active JP5881388B2 (ja)

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JP2016017815A Division JP6194147B2 (ja) 2016-02-02 2016-02-02 半導体装置

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JP2013115182A JP2013115182A (ja) 2013-06-10
JP2013115182A5 JP2013115182A5 (https=) 2015-01-22
JP5881388B2 true JP5881388B2 (ja) 2016-03-09

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016027597A (ja) * 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
US9929044B2 (en) 2014-01-30 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP6736351B2 (ja) * 2015-06-19 2020-08-05 株式会社半導体エネルギー研究所 半導体装置
CN106935659B (zh) * 2017-05-11 2021-01-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、阵列基板以及显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098292A (ja) * 1995-06-21 1997-01-10 Hitachi Ltd 半導体装置及びその製造方法
JP2001345442A (ja) * 2000-06-01 2001-12-14 Nec Corp Ｍｉｓ型ｆｅｔ及び半導体装置の製造方法
JP2004079885A (ja) * 2002-08-21 2004-03-11 Seiko Epson Corp 半導体装置の製造方法
JP5078246B2 (ja) * 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
KR101453829B1 (ko) * 2007-03-23 2014-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조 방법
KR101496148B1 (ko) * 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
JP2010205765A (ja) * 2009-02-27 2010-09-16 Toyama Univ 自己整合半導体トランジスタの製造方法
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN109560140A (zh) * 2010-02-05 2019-04-02 株式会社半导体能源研究所 半导体装置

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