JP2013115182A5 - - Google Patents
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- Publication number
- JP2013115182A5 JP2013115182A5 JP2011259074A JP2011259074A JP2013115182A5 JP 2013115182 A5 JP2013115182 A5 JP 2013115182A5 JP 2011259074 A JP2011259074 A JP 2011259074A JP 2011259074 A JP2011259074 A JP 2011259074A JP 2013115182 A5 JP2013115182 A5 JP 2013115182A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- oxide semiconductor
- forming
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 41
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011259074A JP5881388B2 (ja) | 2011-11-28 | 2011-11-28 | 半導体装置及び半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011259074A JP5881388B2 (ja) | 2011-11-28 | 2011-11-28 | 半導体装置及び半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016017815A Division JP6194147B2 (ja) | 2016-02-02 | 2016-02-02 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013115182A JP2013115182A (ja) | 2013-06-10 |
| JP2013115182A5 true JP2013115182A5 (https=) | 2015-01-22 |
| JP5881388B2 JP5881388B2 (ja) | 2016-03-09 |
Family
ID=48710466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011259074A Active JP5881388B2 (ja) | 2011-11-28 | 2011-11-28 | 半導体装置及び半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5881388B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016027597A (ja) * | 2013-12-06 | 2016-02-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9929044B2 (en) | 2014-01-30 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP6736351B2 (ja) * | 2015-06-19 | 2020-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN106935659B (zh) * | 2017-05-11 | 2021-01-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、阵列基板以及显示装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH098292A (ja) * | 1995-06-21 | 1997-01-10 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JP2001345442A (ja) * | 2000-06-01 | 2001-12-14 | Nec Corp | Ｍｉｓ型ｆｅｔ及び半導体装置の製造方法 |
| JP2004079885A (ja) * | 2002-08-21 | 2004-03-11 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP5078246B2 (ja) * | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| KR101453829B1 (ko) * | 2007-03-23 | 2014-10-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그 제조 방법 |
| KR101496148B1 (ko) * | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
| JP2010205765A (ja) * | 2009-02-27 | 2010-09-16 | Toyama Univ | 自己整合半導体トランジスタの製造方法 |
| WO2011074407A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN109560140A (zh) * | 2010-02-05 | 2019-04-02 | 株式会社半导体能源研究所 | 半导体装置 |
-
2011
- 2011-11-28 JP JP2011259074A patent/JP5881388B2/ja active Active
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