JP5876059B2 - 大面積上に高秩序化ナノピラーまたはナノホール構造を作製するための方法 - Google Patents
大面積上に高秩序化ナノピラーまたはナノホール構造を作製するための方法 Download PDFInfo
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- JP5876059B2 JP5876059B2 JP2013533128A JP2013533128A JP5876059B2 JP 5876059 B2 JP5876059 B2 JP 5876059B2 JP 2013533128 A JP2013533128 A JP 2013533128A JP 2013533128 A JP2013533128 A JP 2013533128A JP 5876059 B2 JP5876059 B2 JP 5876059B2
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- 238000001127 nanoimprint lithography Methods 0.000 claims description 47
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- 238000001746 injection moulding Methods 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 24
- 239000002110 nanocone Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000005350 fused silica glass Substances 0.000 claims description 22
- 239000002105 nanoparticle Substances 0.000 claims description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000000693 micelle Substances 0.000 claims description 5
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- 239000003795 chemical substances by application Substances 0.000 claims description 3
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
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- WTDHULULXKLSOZ-UHFFFAOYSA-N Hydroxylamine hydrochloride Chemical compound Cl.ON WTDHULULXKLSOZ-UHFFFAOYSA-N 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 238000009713 electroplating Methods 0.000 description 2
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- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
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- 230000005469 synchrotron radiation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
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- 150000002118 epoxides Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010107 reaction injection moulding Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/009—Manufacturing the stamps or the moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/002—Component parts, details or accessories; Auxiliary operations
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10013595 | 2010-10-13 | ||
EP10013595.3 | 2010-10-13 | ||
PCT/EP2011/005122 WO2012048870A2 (fr) | 2010-10-13 | 2011-10-12 | Procédé de fabrication de structures hautement ordonnées de nanopiliers ou de nanotrous sur de grandes surfaces |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014502035A JP2014502035A (ja) | 2014-01-23 |
JP5876059B2 true JP5876059B2 (ja) | 2016-03-02 |
Family
ID=44799989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013533128A Active JP5876059B2 (ja) | 2010-10-13 | 2011-10-12 | 大面積上に高秩序化ナノピラーまたはナノホール構造を作製するための方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130284690A1 (fr) |
EP (1) | EP2627605B1 (fr) |
JP (1) | JP5876059B2 (fr) |
CN (1) | CN103402908B (fr) |
WO (1) | WO2012048870A2 (fr) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150026952A1 (en) * | 2012-03-09 | 2015-01-29 | Danmarks Tekniske Universitet | Method for manufacturing a tool part for an injection molding process, a hot embossing process, a nano-imprint process, or an extrusion process |
US9469083B2 (en) * | 2012-07-09 | 2016-10-18 | Massachusetts Institute Of Technology | Inverted nanocone structures for multifunctional surface and its fabrication process |
US20140318657A1 (en) * | 2013-04-30 | 2014-10-30 | The Ohio State University | Fluid conveying apparatus with low drag, anti-fouling flow surface and methods of making same |
CN103576449A (zh) * | 2013-11-06 | 2014-02-12 | 无锡英普林纳米科技有限公司 | 一种用于纳米压印的复合模板及其制备方法 |
CN103576448A (zh) * | 2013-11-06 | 2014-02-12 | 无锡英普林纳米科技有限公司 | 一种利用纳米压印制备多孔减反射薄膜的方法 |
CN104310304A (zh) * | 2014-10-22 | 2015-01-28 | 上海大学 | 可控尺寸及表面结构的纳米柱阵列制备方法 |
EP3130559A1 (fr) | 2015-08-14 | 2017-02-15 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Fabrication de substrats nanostructurés comprenant une pluralité de gradients de nanostructures sur un substrat unique |
CN105399046A (zh) * | 2015-11-02 | 2016-03-16 | 中国科学院重庆绿色智能技术研究院 | 无机微光学元件批量化制作方法 |
SG11201806308WA (en) * | 2016-01-27 | 2018-08-30 | Agency Science Tech & Res | Textured surface ophthalmic device |
AU2018262130B2 (en) * | 2017-05-03 | 2021-11-11 | Nanotech Security Corp. | Methods for micro and nano fabrication by selective template removal |
CN110799858B (zh) * | 2017-06-21 | 2022-04-29 | 株式会社尼康 | 具有疏水和防雾性质的纳米结构化透明制品及其制造方法 |
CN108046211B (zh) * | 2017-11-23 | 2019-05-31 | 中国科学院合肥物质科学研究院 | 一种硅基多刺状纳米锥有序阵列的制备方法及其应用 |
DE102018203213A1 (de) * | 2018-03-05 | 2019-09-05 | Robert Bosch Gmbh | Verfahren zum Herstellen zumindest einer eine Nanostruktur aufweisenden Schicht auf zumindest einem Elektronikelement eines Leiterplatten-Nutzens für ein Kamerasystem und Spritzgießvorrichtung mit einer Strukturplatte mit zumindest einer Nanonegativstruktur zum Herstellen einer eine Nanostruktur aufweisenden Schicht |
CN108693700B (zh) * | 2018-05-17 | 2021-04-09 | 京东方科技集团股份有限公司 | 一种压印模板及其制备方法 |
US20210268693A1 (en) * | 2018-07-10 | 2021-09-02 | B.G. Negev Technologies And Applications Ltd., At Ben-Gurion University | A nanocomposite mold for thermal nanoimprinting and method for producing the same |
CN112638612A (zh) * | 2018-08-31 | 2021-04-09 | 东北泰克诺亚奇股份有限公司 | 成形模及透镜 |
EP3685715B1 (fr) * | 2019-01-24 | 2022-11-30 | Société des Produits Nestlé S.A. | Distributeur de boissons comprenant des composants autonettoyants |
CN111258093B (zh) * | 2020-01-19 | 2020-12-01 | 湖北民族大学 | 一种二维plzst反铁电光子晶体及制备方法 |
CN112018213B (zh) * | 2020-07-20 | 2022-03-29 | 烟台南山学院 | 一种与基底表面具有高粘附力的直立Au纳米锥的制备方法 |
WO2022144773A1 (fr) * | 2020-12-31 | 2022-07-07 | 3M Innovative Properties Company | Appareil et procédé de reproduction et de transfert structurés |
CN113985501B (zh) * | 2021-10-27 | 2023-09-01 | 北京工业大学 | 一种利用热压印制备大面积纳米金属光子晶体的方法 |
GB202208279D0 (en) | 2022-06-06 | 2022-07-20 | Provost Fellows Scholars And Other Members Of Board Of Trinity College Dublin | Method for fabricating nanopatterned substrates |
CN115159446B (zh) * | 2022-06-17 | 2024-07-12 | 燕山大学 | 硅微/纳米柱的制备方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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US6780491B1 (en) * | 1996-12-12 | 2004-08-24 | Micron Technology, Inc. | Microstructures including hydrophilic particles |
JP3940546B2 (ja) * | 1999-06-07 | 2007-07-04 | 株式会社東芝 | パターン形成方法およびパターン形成材料 |
DE19952018C1 (de) * | 1999-10-28 | 2001-08-23 | Martin Moeller | Verfahren zur Herstellung von im Nanometerbereich oberflächendekorierten Substraten |
DE10207952A1 (de) * | 2002-02-25 | 2003-09-04 | Max Planck Gesellschaft | Verfahren zur Erzeugung von porösem Material mit periodischer Porenanordnung |
JP4466074B2 (ja) * | 2003-12-26 | 2010-05-26 | 株式会社日立製作所 | 微細金属構造体とその製造方法、並びに微細金型とデバイス |
JP4253302B2 (ja) * | 2005-01-06 | 2009-04-08 | 株式会社東芝 | 有機エレクトロルミネッセンス素子およびその製造方法 |
WO2007081381A2 (fr) * | 2005-05-10 | 2007-07-19 | The Regents Of The University Of California | Nanostructures a motifs spinodaux |
JP2007246418A (ja) * | 2006-03-14 | 2007-09-27 | Canon Inc | 感光性シランカップリング剤、パターン形成方法およびデバイスの製造方法 |
WO2008001670A1 (fr) * | 2006-06-30 | 2008-01-03 | Oji Paper Co., Ltd. | Masque de gravure de film monoparticulaire et son procédé de production, procédé de production d'une structure fine avec un masque de gravure de film monoparticulaire et structure fine obtenue à l'aide du procédé de production |
KR100831049B1 (ko) * | 2006-12-21 | 2008-05-21 | 삼성전자주식회사 | 나노임프린트 리소그래피용 솔벤트 가용성 스탬프의 제조방법 |
DE102007014538A1 (de) | 2007-03-27 | 2008-10-02 | Carl Zeiss Ag | Verfahren zur Erzeugung einer Antireflexionsoberfläche auf einem optischen Element sowie optische Elemente mit einer Antireflexionsoberfläche |
CN101205054B (zh) * | 2007-12-11 | 2011-03-30 | 山东大学 | 一种微型金属镍模具制作方法 |
JP2008226444A (ja) * | 2008-04-28 | 2008-09-25 | Toshiba Corp | 記録媒体および記録装置 |
US20100095862A1 (en) * | 2008-10-22 | 2010-04-22 | Molecular Imprints, Inc. | Double Sidewall Angle Nano-Imprint Template |
CN101770165A (zh) * | 2009-01-06 | 2010-07-07 | 上海市纳米科技与产业发展促进中心 | 一种压印模板 |
JP4686617B2 (ja) * | 2009-02-26 | 2011-05-25 | 株式会社東芝 | スタンパ作製用マスター原盤およびその製造方法並びにNiスタンパの製造方法 |
DE102009060223A1 (de) * | 2009-12-23 | 2011-06-30 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 80539 | Konusförmige Nanostrukturen auf Substratoberflächen, insbesondere optischen Elementen, Verfahren zu deren Erzeugung sowie deren Verwendung |
JP2011243655A (ja) * | 2010-05-14 | 2011-12-01 | Hitachi Ltd | 高分子薄膜、パターン媒体、及びこれらの製造方法、並びに表面改質材料 |
US8673541B2 (en) * | 2010-10-29 | 2014-03-18 | Seagate Technology Llc | Block copolymer assembly methods and patterns formed thereby |
-
2011
- 2011-10-12 CN CN201180049660.3A patent/CN103402908B/zh active Active
- 2011-10-12 JP JP2013533128A patent/JP5876059B2/ja active Active
- 2011-10-12 US US13/879,043 patent/US20130284690A1/en not_active Abandoned
- 2011-10-12 WO PCT/EP2011/005122 patent/WO2012048870A2/fr active Application Filing
- 2011-10-12 EP EP11769797.9A patent/EP2627605B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
CN103402908A (zh) | 2013-11-20 |
JP2014502035A (ja) | 2014-01-23 |
WO2012048870A2 (fr) | 2012-04-19 |
EP2627605B1 (fr) | 2017-12-20 |
EP2627605A2 (fr) | 2013-08-21 |
US20130284690A1 (en) | 2013-10-31 |
WO2012048870A3 (fr) | 2012-06-28 |
CN103402908B (zh) | 2016-08-31 |
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