JP5873275B2 - 描画装置及び物品の製造方法 - Google Patents

描画装置及び物品の製造方法 Download PDF

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Publication number
JP5873275B2
JP5873275B2 JP2011198865A JP2011198865A JP5873275B2 JP 5873275 B2 JP5873275 B2 JP 5873275B2 JP 2011198865 A JP2011198865 A JP 2011198865A JP 2011198865 A JP2011198865 A JP 2011198865A JP 5873275 B2 JP5873275 B2 JP 5873275B2
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Japan
Prior art keywords
storage unit
unit
drawing data
state
storage
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JP2011198865A
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English (en)
Japanese (ja)
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JP2013062326A (ja
JP2013062326A5 (enExample
Inventor
伸司 大石
伸司 大石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011198865A priority Critical patent/JP5873275B2/ja
Priority to US13/606,125 priority patent/US8686374B2/en
Publication of JP2013062326A publication Critical patent/JP2013062326A/ja
Publication of JP2013062326A5 publication Critical patent/JP2013062326A5/ja
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Publication of JP5873275B2 publication Critical patent/JP5873275B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31754—Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2011198865A 2011-09-12 2011-09-12 描画装置及び物品の製造方法 Active JP5873275B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011198865A JP5873275B2 (ja) 2011-09-12 2011-09-12 描画装置及び物品の製造方法
US13/606,125 US8686374B2 (en) 2011-09-12 2012-09-07 Drawing apparatus, and method of manufacturing article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011198865A JP5873275B2 (ja) 2011-09-12 2011-09-12 描画装置及び物品の製造方法

Publications (3)

Publication Number Publication Date
JP2013062326A JP2013062326A (ja) 2013-04-04
JP2013062326A5 JP2013062326A5 (enExample) 2014-10-30
JP5873275B2 true JP5873275B2 (ja) 2016-03-01

Family

ID=47829587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011198865A Active JP5873275B2 (ja) 2011-09-12 2011-09-12 描画装置及び物品の製造方法

Country Status (2)

Country Link
US (1) US8686374B2 (enExample)
JP (1) JP5873275B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013143451A (ja) * 2012-01-10 2013-07-22 Canon Inc 描画装置、物品の製造方法及び処理装置
JP2015191153A (ja) * 2014-03-28 2015-11-02 キヤノン株式会社 描画システム、描画方法及び物品の製造方法
JP6589758B2 (ja) * 2016-07-04 2019-10-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
KR20250158038A (ko) * 2023-03-28 2025-11-05 가부시키가이샤 니콘 데이터 전송 장치, 노광 장치, 장치 및 디바이스 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5847741B2 (ja) * 1978-03-29 1983-10-24 日本電信電話株式会社 パタ−ン発生器
JPS62263632A (ja) * 1986-05-12 1987-11-16 Hitachi Ltd 電子線描画装置
JPS6394623A (ja) * 1986-10-09 1988-04-25 Hitachi Ltd 描画装置
JPH01111326A (ja) * 1987-10-26 1989-04-28 Fujitsu Ltd 電子ビーム露光装置
JPH03108712A (ja) * 1989-09-22 1991-05-08 Toshiba Corp 電子ビーム描画装置
JPH07273006A (ja) * 1994-03-29 1995-10-20 Fujitsu Ltd 荷電粒子ビーム露光方法及びその装置
DE69700328T2 (de) * 1997-09-13 1999-11-04 Hewlett-Packard Co., Palo Alto Ausgleich von Latenzzeit in einem Speicher
JP2001076989A (ja) * 1999-08-31 2001-03-23 Canon Inc 荷電粒子線露光装置及びその制御方法。
JP5139658B2 (ja) * 2006-09-21 2013-02-06 株式会社ニューフレアテクノロジー 描画データ処理制御装置
JP5662863B2 (ja) * 2011-03-31 2015-02-04 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

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Publication number Publication date
US20130063708A1 (en) 2013-03-14
US8686374B2 (en) 2014-04-01
JP2013062326A (ja) 2013-04-04

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