JP5872904B2 - ＴｉＮ膜の成膜方法および記憶媒体 - Google Patents

ＴｉＮ膜の成膜方法および記憶媒体 Download PDF

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Publication number
JP5872904B2
JP5872904B2 JP2012000444A JP2012000444A JP5872904B2 JP 5872904 B2 JP5872904 B2 JP 5872904B2 JP 2012000444 A JP2012000444 A JP 2012000444A JP 2012000444 A JP2012000444 A JP 2012000444A JP 5872904 B2 JP5872904 B2 JP 5872904B2
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Japan
Prior art keywords
film
tin
forming
stress
gas
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JP2012000444A
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English (en)
Japanese (ja)
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JP2013139609A (ja
JP2013139609A5 (enExample
Inventor
山▲崎▼　英亮
英亮 山▲崎▼
健史 山本
健史 山本
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2012000444A priority Critical patent/JP5872904B2/ja
Priority to KR1020147021757A priority patent/KR101739631B1/ko
Priority to US14/370,732 priority patent/US9257278B2/en
Priority to PCT/JP2012/082213 priority patent/WO2013103076A1/ja
Priority to TW102100185A priority patent/TWI613309B/zh
Publication of JP2013139609A publication Critical patent/JP2013139609A/ja
Publication of JP2013139609A5 publication Critical patent/JP2013139609A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
JP2012000444A 2012-01-05 2012-01-05 ＴｉＮ膜の成膜方法および記憶媒体 Active JP5872904B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012000444A JP5872904B2 (ja) 2012-01-05 2012-01-05 ＴｉＮ膜の成膜方法および記憶媒体
KR1020147021757A KR101739631B1 (ko) 2012-01-05 2012-12-12 TiN막의 성막 방법 및 기억 매체
US14/370,732 US9257278B2 (en) 2012-01-05 2012-12-12 Method for forming TiN and storage medium
PCT/JP2012/082213 WO2013103076A1 (ja) 2012-01-05 2012-12-12 ＴｉＮ膜の成膜方法および記憶媒体
TW102100185A TWI613309B (zh) 2012-01-05 2013-01-04 ＴｉＮ膜之成膜方法及記憶媒體

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012000444A JP5872904B2 (ja) 2012-01-05 2012-01-05 ＴｉＮ膜の成膜方法および記憶媒体

Publications (3)

Publication Number Publication Date
JP2013139609A JP2013139609A (ja) 2013-07-18
JP2013139609A5 JP2013139609A5 (enExample) 2014-11-27
JP5872904B2 true JP5872904B2 (ja) 2016-03-01

Family

ID=48745140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012000444A Active JP5872904B2 (ja) 2012-01-05 2012-01-05 ＴｉＮ膜の成膜方法および記憶媒体

Country Status (5)

Country Link
US (1) US9257278B2 (enExample)
JP (1) JP5872904B2 (enExample)
KR (1) KR101739631B1 (enExample)
TW (1) TWI613309B (enExample)
WO (1) WO2013103076A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6492736B2 (ja) 2015-02-17 2019-04-03 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
JP6416031B2 (ja) * 2015-03-30 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体デバイスの製造方法、基板処理装置およびプログラム
JP6436886B2 (ja) * 2015-09-28 2018-12-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法及びプログラム
US10543512B2 (en) * 2015-12-08 2020-01-28 M-I L.L.C. Apparatus and method of separation with a pressure differential device
US10535527B2 (en) 2017-07-13 2020-01-14 Applied Materials, Inc. Methods for depositing semiconductor films
KR102549542B1 (ko) 2017-09-12 2023-06-29 삼성전자주식회사 금속 하드마스크 및 반도체 소자의 제조 방법
CN110875181A (zh) * 2018-08-30 2020-03-10 长鑫存储技术有限公司 介电材料层及其形成方法、应用其的半导体结构

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3138892B2 (ja) 1992-12-17 2001-02-26 東京エレクトロン株式会社 薄膜形成方法及びその装置
US6699530B2 (en) * 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
US6155198A (en) 1994-11-14 2000-12-05 Applied Materials, Inc. Apparatus for constructing an oxidized film on a semiconductor wafer
US6251758B1 (en) 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
US5989999A (en) 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
KR100218728B1 (ko) 1995-11-01 1999-09-01 김영환 반도체 소자의 금속 배선 제조방법
JP3851686B2 (ja) * 1996-06-08 2006-11-29 キヤノンアネルバ株式会社 プラズマｃｖｄによる薄膜形成方法
JPH10237662A (ja) * 1996-12-24 1998-09-08 Sony Corp 金属膜のプラズマｃｖｄ方法、および金属窒化物膜の形成方法ならびに半導体装置
US6555183B2 (en) * 1999-06-11 2003-04-29 Applied Materials, Inc. Plasma treatment of a titanium nitride film formed by chemical vapor deposition
JP4178776B2 (ja) 2001-09-03 2008-11-12 東京エレクトロン株式会社 成膜方法
US20050112876A1 (en) * 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film
KR100695887B1 (ko) 2004-12-09 2007-03-20 삼성전자주식회사 티타늄질화막 형성 방법 및 상기 티타늄질화막을 이용한금속-절연체-금속 커패시터의 하부전극 형성 방법
CN101910458B (zh) * 2008-03-28 2012-11-14 东京毅力科创株式会社 金属系膜的成膜方法以及存储介质
JP5774822B2 (ja) 2009-05-25 2015-09-09 株式会社日立国際電気 半導体デバイスの製造方法及び基板処理装置
JP2011103330A (ja) * 2009-11-10 2011-05-26 Panasonic Corp 半導体装置の製造方法
US8975187B2 (en) * 2013-03-15 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Stress-controlled formation of tin hard mask

Also Published As

Publication number Publication date
WO2013103076A1 (ja) 2013-07-11
US20150004803A1 (en) 2015-01-01
TW201348495A (zh) 2013-12-01
US9257278B2 (en) 2016-02-09
JP2013139609A (ja) 2013-07-18
KR101739631B1 (ko) 2017-05-24
TWI613309B (zh) 2018-02-01
KR20140116901A (ko) 2014-10-06

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