KR101739631B1 - TiN막의 성막 방법 및 기억 매체 - Google Patents

TiN막의 성막 방법 및 기억 매체 Download PDF

Info

Publication number
KR101739631B1
KR101739631B1 KR1020147021757A KR20147021757A KR101739631B1 KR 101739631 B1 KR101739631 B1 KR 101739631B1 KR 1020147021757 A KR1020147021757 A KR 1020147021757A KR 20147021757 A KR20147021757 A KR 20147021757A KR 101739631 B1 KR101739631 B1 KR 101739631B1
Authority
KR
South Korea
Prior art keywords
film
tin
stress
gas
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020147021757A
Other languages
English (en)
Korean (ko)
Other versions
KR20140116901A (ko
Inventor
히데아키 야마사키
다케시 야마모토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20140116901A publication Critical patent/KR20140116901A/ko
Application granted granted Critical
Publication of KR101739631B1 publication Critical patent/KR101739631B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020147021757A 2012-01-05 2012-12-12 TiN막의 성막 방법 및 기억 매체 Active KR101739631B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012000444A JP5872904B2 (ja) 2012-01-05 2012-01-05 ＴｉＮ膜の成膜方法および記憶媒体
JPJP-P-2012-000444 2012-01-05
PCT/JP2012/082213 WO2013103076A1 (ja) 2012-01-05 2012-12-12 ＴｉＮ膜の成膜方法および記憶媒体

Publications (2)

Publication Number Publication Date
KR20140116901A KR20140116901A (ko) 2014-10-06
KR101739631B1 true KR101739631B1 (ko) 2017-05-24

Family

ID=48745140

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147021757A Active KR101739631B1 (ko) 2012-01-05 2012-12-12 TiN막의 성막 방법 및 기억 매체

Country Status (5)

Country Link
US (1) US9257278B2 (enExample)
JP (1) JP5872904B2 (enExample)
KR (1) KR101739631B1 (enExample)
TW (1) TWI613309B (enExample)
WO (1) WO2013103076A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6492736B2 (ja) 2015-02-17 2019-04-03 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
JP6416031B2 (ja) * 2015-03-30 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体デバイスの製造方法、基板処理装置およびプログラム
JP6436886B2 (ja) * 2015-09-28 2018-12-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法及びプログラム
US10543512B2 (en) * 2015-12-08 2020-01-28 M-I L.L.C. Apparatus and method of separation with a pressure differential device
US10535527B2 (en) 2017-07-13 2020-01-14 Applied Materials, Inc. Methods for depositing semiconductor films
KR102549542B1 (ko) 2017-09-12 2023-06-29 삼성전자주식회사 금속 하드마스크 및 반도체 소자의 제조 방법
CN110875181A (zh) * 2018-08-30 2020-03-10 长鑫存储技术有限公司 介电材料层及其形成方法、应用其的半导体结构

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050112876A1 (en) * 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3138892B2 (ja) 1992-12-17 2001-02-26 東京エレクトロン株式会社 薄膜形成方法及びその装置
US6699530B2 (en) * 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
US6155198A (en) 1994-11-14 2000-12-05 Applied Materials, Inc. Apparatus for constructing an oxidized film on a semiconductor wafer
US6251758B1 (en) 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
US5989999A (en) 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
KR100218728B1 (ko) 1995-11-01 1999-09-01 김영환 반도체 소자의 금속 배선 제조방법
JP3851686B2 (ja) * 1996-06-08 2006-11-29 キヤノンアネルバ株式会社 プラズマｃｖｄによる薄膜形成方法
JPH10237662A (ja) * 1996-12-24 1998-09-08 Sony Corp 金属膜のプラズマｃｖｄ方法、および金属窒化物膜の形成方法ならびに半導体装置
US6555183B2 (en) * 1999-06-11 2003-04-29 Applied Materials, Inc. Plasma treatment of a titanium nitride film formed by chemical vapor deposition
JP4178776B2 (ja) 2001-09-03 2008-11-12 東京エレクトロン株式会社 成膜方法
KR100695887B1 (ko) 2004-12-09 2007-03-20 삼성전자주식회사 티타늄질화막 형성 방법 및 상기 티타늄질화막을 이용한금속-절연체-금속 커패시터의 하부전극 형성 방법
CN101910458B (zh) * 2008-03-28 2012-11-14 东京毅力科创株式会社 金属系膜的成膜方法以及存储介质
JP5774822B2 (ja) 2009-05-25 2015-09-09 株式会社日立国際電気 半導体デバイスの製造方法及び基板処理装置
JP2011103330A (ja) * 2009-11-10 2011-05-26 Panasonic Corp 半導体装置の製造方法
US8975187B2 (en) * 2013-03-15 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Stress-controlled formation of tin hard mask

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050112876A1 (en) * 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film

Also Published As

Publication number Publication date
WO2013103076A1 (ja) 2013-07-11
US20150004803A1 (en) 2015-01-01
TW201348495A (zh) 2013-12-01
US9257278B2 (en) 2016-02-09
JP2013139609A (ja) 2013-07-18
TWI613309B (zh) 2018-02-01
JP5872904B2 (ja) 2016-03-01
KR20140116901A (ko) 2014-10-06

Similar Documents

Publication Publication Date Title
KR101739631B1 (ko) TiN막의 성막 방법 및 기억 매체
KR101379089B1 (ko) 금속 하드 마스크 제조
KR101787806B1 (ko) ＴｉＮ막의 성막 방법 및 기억 매체
KR101921359B1 (ko) 실리콘 질화물 막의 성막 방법 및 성막 장치
JP6807278B2 (ja) シリコン窒化膜の成膜方法および成膜装置
KR101991574B1 (ko) 성막 장치, 및 그것에 이용하는 가스 토출 부재
TWI796388B (zh) 減少或消除鎢膜中缺陷的方法
TWI457997B (zh) 使用對稱流入口與流出口供應處理氣體之基材處理設備
KR20170044602A (ko) Peald에 의하여 트렌치들 내에 유전체 막을 퇴적하는 방법
JP6426893B2 (ja) コンタクト層の形成方法
KR101759769B1 (ko) Ｔｉ막의 성막 방법
JP2018011009A (ja) 窒化膜の成膜方法および成膜装置
JP2010016136A (ja) 薄膜の成膜方法及び成膜装置
TW201907046A (zh) 成膜方法及成膜裝置
KR20180061472A (ko) 플라즈마 원자층 증착법을 이용한 박막 증착 방법
JP2010242180A (ja) 基板処理装置及び半導体装置の製造方法
TW202509265A (zh) 金屬氮化物薄膜的形成方法
KR20240110438A (ko) 기판 처리 방법
KR20180064618A (ko) 박막 증착 방법
KR20230087681A (ko) 박막 증착 장치 및 이를 이용한 박막 증착 방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20140804

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20150713

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20160926

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20170310

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20170518

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20170518

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20200506

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20210503

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20220418

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20240424

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20250407

Start annual number: 9

End annual number: 9