JP5872760B2 - 半導体基体のテクスチャ化 - Google Patents
半導体基体のテクスチャ化 Download PDFInfo
- Publication number
- JP5872760B2 JP5872760B2 JP2010213050A JP2010213050A JP5872760B2 JP 5872760 B2 JP5872760 B2 JP 5872760B2 JP 2010213050 A JP2010213050 A JP 2010213050A JP 2010213050 A JP2010213050 A JP 2010213050A JP 5872760 B2 JP5872760 B2 JP 5872760B2
- Authority
- JP
- Japan
- Prior art keywords
- integer
- semiconductor substrate
- texturing
- aqueous solution
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 61
- 239000000758 substrate Substances 0.000 title claims description 38
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 48
- 239000007864 aqueous solution Substances 0.000 claims description 40
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 35
- 229910052709 silver Inorganic materials 0.000 claims description 35
- 239000004332 silver Substances 0.000 claims description 35
- 229910052759 nickel Inorganic materials 0.000 claims description 33
- 150000001875 compounds Chemical class 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000003513 alkali Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 229910001868 water Inorganic materials 0.000 claims description 11
- 230000003667 anti-reflective effect Effects 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- 229910001514 alkali metal chloride Inorganic materials 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000002585 base Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 150000004679 hydroxides Chemical class 0.000 claims description 2
- 150000004760 silicates Chemical class 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 47
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 45
- 239000000243 solution Substances 0.000 description 38
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 26
- 238000007747 plating Methods 0.000 description 22
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 15
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 13
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical class COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 150000002334 glycols Chemical class 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- -1 ether acetate derivative Chemical class 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000009472 formulation Methods 0.000 description 5
- 238000001579 optical reflectometry Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 239000012776 electronic material Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 2
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 2
- 229960001231 choline Drugs 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 229910052914 metal silicate Inorganic materials 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- FYFNFZLMMGXBMT-UHFFFAOYSA-M tributyl(ethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CC)(CCCC)CCCC FYFNFZLMMGXBMT-UHFFFAOYSA-M 0.000 description 2
- XHMRNVTVZOCEEI-UHFFFAOYSA-N (3-hydroxy-2,3-dimethylbutan-2-yl)azanium;hydroxide Chemical compound [OH-].CC(C)([NH3+])C(C)(C)O XHMRNVTVZOCEEI-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 description 1
- JZUHIOJYCPIVLQ-UHFFFAOYSA-N 2-methylpentane-1,5-diamine Chemical compound NCC(C)CCCN JZUHIOJYCPIVLQ-UHFFFAOYSA-N 0.000 description 1
- RPQFOXCKLIALTB-UHFFFAOYSA-M 3-hydroxybutyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC(O)CC[N+](C)(C)C RPQFOXCKLIALTB-UHFFFAOYSA-M 0.000 description 1
- AJEUSSNTTSVFIZ-UHFFFAOYSA-M 3-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCO AJEUSSNTTSVFIZ-UHFFFAOYSA-M 0.000 description 1
- FAXDZWQIWUSWJH-UHFFFAOYSA-N 3-methoxypropan-1-amine Chemical compound COCCCN FAXDZWQIWUSWJH-UHFFFAOYSA-N 0.000 description 1
- YZHQBWDNOANICQ-UHFFFAOYSA-M 4-hydroxybutyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCCO YZHQBWDNOANICQ-UHFFFAOYSA-M 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- QVHMSMOUDQXMRS-UHFFFAOYSA-N PPG n4 Chemical compound CC(O)COC(C)COC(C)COC(C)CO QVHMSMOUDQXMRS-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- RKTGAWJWCNLSFX-UHFFFAOYSA-M bis(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(C)CCO RKTGAWJWCNLSFX-UHFFFAOYSA-M 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- OGGLTDSXGQCNMM-UHFFFAOYSA-N butyl(2-hydroxyethyl)azanium hydroxide Chemical compound [OH-].C(CCC)[NH2+]CCO OGGLTDSXGQCNMM-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000994 contrast dye Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- KFJNCGCKGILQMF-UHFFFAOYSA-M dibutyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(C)CCCC KFJNCGCKGILQMF-UHFFFAOYSA-M 0.000 description 1
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical group OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- IIAPBJPXNIYANW-UHFFFAOYSA-M ethyl-(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CCO IIAPBJPXNIYANW-UHFFFAOYSA-M 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- KTDMLSMSWDJKGA-UHFFFAOYSA-M methyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](C)(CCC)CCC KTDMLSMSWDJKGA-UHFFFAOYSA-M 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- WTSXICLFTPPDTL-UHFFFAOYSA-N pentane-1,3-diamine Chemical compound CCC(N)CCN WTSXICLFTPPDTL-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 description 1
- JAJRRCSBKZOLPA-UHFFFAOYSA-M triethyl(methyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(CC)CC JAJRRCSBKZOLPA-UHFFFAOYSA-M 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Weting (AREA)
Description
本発明は、不揮発性高分子量アルコキシ化グリコール、そのエーテルおよびエーテルアセタート誘導体を含む水溶液で半導体基体をテクスチャ化する(texturing)方法に関する。より具体的には、本発明は、不揮発性高分子量アルコキシ化グリコール、そのエーテルおよびエーテルアセタート誘導体を含む水溶液で半導体基体をテクスチャ化して、半導体基体からの光反射率を低減させる方法に関する。
別の形態においては、方法は、半導体基体を提供し;170g/モル以上の重量平均分子量および75℃以上の引火点を有する、アルコキシ化グリコール、そのモノメチルエーテルおよびモノメチルエーテルアセタート誘導体から選択される1種以上の化合物と、1種以上のアルカリ化合物とを含む水溶液で半導体基体の表面をテクスチャ化し;半導体基体をドーピングしてp/n接合を形成し;テクスチャ化された表面上に反射防止層を堆積させ;反射防止層を選択的にエッチングしてテクスチャ化された表面の部分を露出させてパターンを形成し;並びに、テクスチャ化された表面の露出した部分上に1以上の金属層を堆積させて、電流トラックを形成する;ことを含む。
本方法は、太陽電池の製造における半導体をはじめとする、一般の光起電力素子のための半導体をテクスチャ化するために使用されうる。本方法は、光学および電気化学検出器/センサー、バイオ検出器/バイオセンサー、触媒、電極、ゲート電極、オーミック接触、相互接続ライン、ショットキー障壁ダイオード接触、光電子部品、並びに入射光の反射率の低減がデバイスの効率を改良する他の物品の製造における半導体をテクスチャ化するためにも使用されうる。
を有する化合物も挙げられる。典型的には、nは3〜5の、より典型的には3〜4の整数である。このようなアルコキシ化グリコールの例はトリエチレングリコール、テトラエチレングリコールおよびポリエチレングリコールである。
前面またはエミッタ層上のn+ドープされた領域、並びにエミッタ層の下のpn接合を有するドープされた単結晶性シリコンウェハに、下記表1に開示される配合を有するテクスチャ化水溶液が噴霧される。
処理されたエミッタ層の表面は、次いで、テクスチャの品質について調べられた。その表面は、走査型電子顕微鏡(AMRAY1510電解放射走査型電子顕微鏡)を用いて調べられた。結果は、エミッタ層の表面全体上に、ランダムで均一な正方晶ピラミッド構造を示した。これはテクスチャ化された表面の200倍でのSEMである図1に示される。ピーク高さ分布も良好であり、ピークの大部分は6.5μm〜8μmの範囲であり、少量は1μm〜3μmの範囲であった。
次いで、テクスチャ化表面の反射率がMacBeth Coloreye反射率計7000を用いて360nm〜750nmの波長範囲で測定された。入射光のソースはパルスキセノン球であった。6回の反射率の読み取りの平均が表面にわたって検討された。反射率は13%〜15%の範囲であり、平均14%であった。平均反射率の理想的な範囲は13%〜14%であった。
トリプロピレングリコールがジプロピレングリコールに替えられたことを除いて、実施例1に記載された方法が繰り返された。テクスチャ化水溶液は以下の表2に示される配合を有していた。
処理されたエミッタ層の表面は、次いで、テクスチャの品質について調べられた。その表面は、走査型電子顕微鏡を用いて調べられた。ランダム分布のピラミッド構造が存在していたが、エミッタ層の表面全体上にわたって、ピラミッド構造は均一ではなかった。図2はテクスチャ化された表面のSEMである。さらに、多くの平坦な領域が存在していた。ピラミッド構造の均一さまたは欠け、並びに平坦な領域は、実施例1のテクスチャ化された表面と比較して入射光の反射率を増大させた。ピーク高さ分布は実施例1のものよりも劣っていた。ピーク分布の大部分は2μm〜8μmの範囲にあり、いくらかは10μm〜12μmであった。ピーク高さの幅広の分布は、結果的に、増大した反射率も生じさせた。MacBeth Coloreye反射率計7000を用いて測定された場合、平均反射率は360nm〜750nmの範囲で27%であった。
Claims (7)
- a)単結晶性、多結晶性または非晶質ケイ素から構成された半導体基体を提供し;並びに、
b)式:
(ii)Rは−CH3であり、Yは−C(O)CH3であり、mは3以上の整数であり、かつxは3〜6の整数であるか、または、
(iii)Rは−CH3であり、Yは−Hであり、mは8〜66の整数であり、かつxは3〜6の整数である)を有し、かつ170g/モル以上の分子量および75℃以上の引火点を有する1種以上の化合物と、1種以上のアルカリ化合物とを含む水溶液を前記半導体基体に適用し、前記半導体基体をテクスチャ化する;
ことを含む方法。 - 1種以上のアルカリ化合物が水酸化物およびアルカノールアミンから選択される、請求項1に記載の方法。
- 1種以上のアルカリ金属塩化物または1種以上のケイ酸塩またはこれらの混合物をさらに含む、請求項1に記載の方法。
- a)単結晶性、多結晶性または非晶質ケイ素から構成された半導体基体を提供し;
b)式:
(ii)Rは−CH3であり、Yは−C(O)CH3であり、mは3以上の整数であり、かつxは3〜6の整数であるか、または、
(iii)Rは−CH3であり、Yは−Hであり、mは8〜66の整数であり、かつxは3〜6の整数である)を有し、かつ170g/モル以上の分子量および75℃以上の引火点を有する1種以上の化合物と、1種以上の塩基とを含む水溶液で前記半導体基体の表面をテクスチャ化し;
c)前記半導体基体をドーピングしてp/n接合を提供し;
d)テクスチャ化された表面上に反射防止層を堆積させ;
e)反射防止層を選択的にエッチングして、テクスチャ化された表面の部分を露出させてパターンを形成し;並びに、
f)テクスチャ化された表面の露出した部分上に1以上の金属層を堆積させる;
ことを含む方法。 - 1以上の金属層が、金、銀、銅またはニッケルである、請求項4に記載の方法。
- 前記半導体基体が光起電力素子、電極、ショットキー障壁ダイオード接触、光電子部品または、光もしくは電気化学検出器/センサーのための部品である、請求項4に記載の方法。
- 式:
(ii)Rは−CH3であり、Yは−C(O)CH3であり、mは3以上の整数であり、かつxは3〜6の整数であるか、または、
(iii)Rは−CH3であり、Yは−Hであり、mは8〜66の整数であり、かつxは3〜6の整数である)を有し、かつ170g/モル以上の重量平均分子量および75℃以上の引火点を有する、0.001重量%〜2重量%の量の1種以上の化合物と、0.5重量%〜15重量%の1種以上のアルカリ化合物と、水とから本質的になる、単結晶性、多結晶性または非晶質ケイ素から構成された半導体基体をテクスチャー化するための水溶液。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US27740909P | 2009-09-24 | 2009-09-24 | |
US61/277409 | 2009-09-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011139023A JP2011139023A (ja) | 2011-07-14 |
JP5872760B2 true JP5872760B2 (ja) | 2016-03-01 |
Family
ID=43466594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010213050A Expired - Fee Related JP5872760B2 (ja) | 2009-09-24 | 2010-09-24 | 半導体基体のテクスチャ化 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7955989B2 (ja) |
EP (1) | EP2302701A3 (ja) |
JP (1) | JP5872760B2 (ja) |
KR (1) | KR101723427B1 (ja) |
CN (1) | CN102162139B (ja) |
SG (1) | SG169962A1 (ja) |
TW (1) | TWI408211B (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9232167B2 (en) * | 2009-08-04 | 2016-01-05 | Echostar Technologies L.L.C. | Video system and remote control with touch interface for supplemental content display |
SG170691A1 (en) * | 2009-10-14 | 2011-05-30 | Rohm & Haas Elect Mat | Method of cleaning and micro-etching semiconductor wafers |
TWI539493B (zh) | 2010-03-08 | 2016-06-21 | 黛納羅伊有限責任公司 | 用於摻雜具有分子單層之矽基材之方法及組合物 |
DE102011050136A1 (de) | 2010-09-03 | 2012-03-08 | Schott Solar Ag | Verfahren zum nasschemischen Ätzen einer Siliziumschicht |
EP2514799A1 (en) * | 2011-04-21 | 2012-10-24 | Rohm and Haas Electronic Materials LLC | Improved polycrystalline texturing composition and method |
WO2012169788A2 (ko) * | 2011-06-07 | 2012-12-13 | 동우화인켐 주식회사 | 단결정 실리콘 웨이퍼 및 그 제조방법 |
KR20120135870A (ko) * | 2011-06-07 | 2012-12-17 | 동우 화인켐 주식회사 | 단결정 실리콘 웨이퍼 및 그 제조방법 |
JP2015008167A (ja) * | 2011-10-28 | 2015-01-15 | 三菱電機株式会社 | シリコン基板のエッチング方法およびシリコン基板のエッチング液 |
US20140004701A1 (en) * | 2012-06-27 | 2014-01-02 | Rohm And Haas Electronic Materials Llc | Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance |
US8765001B2 (en) * | 2012-08-28 | 2014-07-01 | Rohm And Haas Electronic Materials Llc | Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance |
US8853438B2 (en) | 2012-11-05 | 2014-10-07 | Dynaloy, Llc | Formulations of solutions and processes for forming a substrate including an arsenic dopant |
JP6157895B2 (ja) * | 2013-04-01 | 2017-07-05 | 株式会社トクヤマ | テクスチャー形成用組成物、シリコン基板の製造方法、及びテクスチャー形成用組成物調製キット |
KR101892624B1 (ko) | 2014-03-17 | 2018-08-28 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
TWI635160B (zh) * | 2014-03-07 | 2018-09-11 | 東友精細化工有限公司 | 紋理蝕刻溶液組成物及晶體矽晶圓紋理蝕刻方法 |
KR101863536B1 (ko) * | 2014-03-07 | 2018-06-01 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
KR101956352B1 (ko) * | 2014-03-20 | 2019-03-08 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3998659A (en) * | 1974-01-28 | 1976-12-21 | Texas Instruments Incorporated | Solar cell with semiconductor particles and method of fabrication |
US4137123A (en) * | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
DE59008544D1 (de) | 1990-09-28 | 1995-03-30 | Siemens Solar Gmbh | Nasschemische Strukturätzung von Silizium. |
JPH0690014A (ja) * | 1992-07-22 | 1994-03-29 | Mitsubishi Electric Corp | 薄型太陽電池及びその製造方法,エッチング方法及び自動エッチング装置,並びに半導体装置の製造方法 |
US5431777A (en) * | 1992-09-17 | 1995-07-11 | International Business Machines Corporation | Methods and compositions for the selective etching of silicon |
US6544599B1 (en) * | 1996-07-31 | 2003-04-08 | Univ Arkansas | Process and apparatus for applying charged particles to a substrate, process for forming a layer on a substrate, products made therefrom |
JPH11214722A (ja) * | 1998-01-28 | 1999-08-06 | Mitsubishi Electric Corp | 太陽電池、およびその製造方法並びに製造装置 |
JPH11214772A (ja) * | 1998-01-28 | 1999-08-06 | Mitsubishi Electric Corp | レーザ発振器の冷却装置 |
DE19811878C2 (de) * | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
JP3719632B2 (ja) * | 1998-12-17 | 2005-11-24 | 三菱電機株式会社 | シリコン太陽電池の製造方法 |
WO2000043475A2 (en) * | 1999-01-20 | 2000-07-27 | The Procter & Gamble Company | Dishwashing compositions comprising modified alkylbenzene sulfonates |
DE10241300A1 (de) | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
JP4741315B2 (ja) * | 2005-08-11 | 2011-08-03 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ポリマー除去組成物 |
DE102006051952A1 (de) | 2006-11-01 | 2008-05-08 | Merck Patent Gmbh | Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten |
KR100964153B1 (ko) | 2006-11-22 | 2010-06-17 | 엘지전자 주식회사 | 태양전지의 제조방법 및 그에 의해 제조되는 태양전지 |
KR20080100057A (ko) * | 2007-05-11 | 2008-11-14 | 주성엔지니어링(주) | 결정질 실리콘 태양전지의 제조방법과 그 제조장치 및시스템 |
DE102007058829A1 (de) | 2007-12-06 | 2009-06-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung |
US9376648B2 (en) * | 2008-04-07 | 2016-06-28 | The Procter & Gamble Company | Foam manipulation compositions containing fine particles |
JP5339880B2 (ja) * | 2008-12-11 | 2013-11-13 | 株式会社新菱 | シリコン基板のエッチング液およびシリコン基板の表面加工方法 |
JP2010226089A (ja) * | 2009-01-14 | 2010-10-07 | Rohm & Haas Electronic Materials Llc | 半導体ウェハをクリーニングする方法 |
-
2010
- 2010-09-22 US US12/887,873 patent/US7955989B2/en active Active
- 2010-09-23 SG SG201006948-2A patent/SG169962A1/en unknown
- 2010-09-23 EP EP10178654.9A patent/EP2302701A3/en not_active Withdrawn
- 2010-09-23 TW TW099132153A patent/TWI408211B/zh active
- 2010-09-24 KR KR1020100092931A patent/KR101723427B1/ko active IP Right Grant
- 2010-09-24 JP JP2010213050A patent/JP5872760B2/ja not_active Expired - Fee Related
- 2010-09-27 CN CN201010621452.3A patent/CN102162139B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP2302701A2 (en) | 2011-03-30 |
TWI408211B (zh) | 2013-09-11 |
US20110081742A1 (en) | 2011-04-07 |
KR20110033096A (ko) | 2011-03-30 |
SG169962A1 (en) | 2011-04-29 |
US7955989B2 (en) | 2011-06-07 |
CN102162139B (zh) | 2014-02-26 |
CN102162139A (zh) | 2011-08-24 |
EP2302701A3 (en) | 2014-08-20 |
KR101723427B1 (ko) | 2017-04-05 |
JP2011139023A (ja) | 2011-07-14 |
TW201132742A (en) | 2011-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5872760B2 (ja) | 半導体基体のテクスチャ化 | |
US9663715B2 (en) | Polycrystalline texturing composition and method | |
KR101578035B1 (ko) | 반도체 상에서의 광 유도 플레이팅 방법 | |
JP6058070B2 (ja) | 半導体ウェハを清浄化しマイクロエッチングする方法 | |
JP6279254B2 (ja) | 入射光の反射率を低減させるための単結晶半導体基体のテクスチャー化 | |
TWI488944B (zh) | 用以降低入射光反射率之單晶半導體基板之紋理化 | |
KR20120120073A (ko) | 개선된 다결정 텍스쳐링 조성물 및 방법 | |
US20170069480A9 (en) | Method of cleaning and micro-etching semiconductor wafers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130920 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141008 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150108 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150430 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150728 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160107 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160114 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5872760 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |