JP5858912B2 - 磁束ピンニングを改善するためのプレファブ式に作製されたナノ構造を有する超伝導部材 - Google Patents

磁束ピンニングを改善するためのプレファブ式に作製されたナノ構造を有する超伝導部材 Download PDF

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JP5858912B2
JP5858912B2 JP2012522973A JP2012522973A JP5858912B2 JP 5858912 B2 JP5858912 B2 JP 5858912B2 JP 2012522973 A JP2012522973 A JP 2012522973A JP 2012522973 A JP2012522973 A JP 2012522973A JP 5858912 B2 JP5858912 B2 JP 5858912B2
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nanorods
layer
hts
buffer layer
superconducting
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JP2013501313A (ja
JP2013501313A5 (enExample
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セルヴァマニック−エーエム，ヴェンカト
マイキッチ，ゴーラン
マルシェヴィスキー，マキシム
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ユニバーシティー オブ ヒューストン システム
ユニバーシティー オブ ヒューストン システム
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0828—Introducing flux pinning centres
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
JP2012522973A 2009-07-28 2010-07-27 磁束ピンニングを改善するためのプレファブ式に作製されたナノ構造を有する超伝導部材 Active JP5858912B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22922509P 2009-07-28 2009-07-28
US61/229,225 2009-07-28
PCT/US2010/043411 WO2011017112A2 (en) 2009-07-28 2010-07-27 Superconducting article with prefabricated nanostructure for improved flux pinning

Publications (3)

Publication Number Publication Date
JP2013501313A JP2013501313A (ja) 2013-01-10
JP2013501313A5 JP2013501313A5 (enExample) 2013-09-12
JP5858912B2 true JP5858912B2 (ja) 2016-02-10

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JP2012522973A Active JP5858912B2 (ja) 2009-07-28 2010-07-27 磁束ピンニングを改善するためのプレファブ式に作製されたナノ構造を有する超伝導部材

Country Status (8)

Country Link
US (1) US8926868B2 (enExample)
EP (1) EP2460197B1 (enExample)
JP (1) JP5858912B2 (enExample)
KR (1) KR101485060B1 (enExample)
CN (2) CN106065474B (enExample)
CA (1) CA2768516C (enExample)
IN (1) IN2012DN00641A (enExample)
WO (1) WO2011017112A2 (enExample)

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US7442629B2 (en) * 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
TW201228985A (en) * 2011-01-05 2012-07-16 Univ Nat Cheng Kung Nanorod-containing precursor powder, nanorod-containing superconductor bulk and method for manufacturing the same
US9362025B1 (en) 2012-02-08 2016-06-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
US9564258B2 (en) 2012-02-08 2017-02-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
DE102013210940B3 (de) * 2013-06-12 2014-07-03 THEVA DüNNSCHICHTTECHNIK GMBH Beschichtung technischer Substrate zur Herstellung supraleitender Schichten mit hoher Sprungtemperatur
US9410394B2 (en) 2013-12-11 2016-08-09 Schlumberger Technology Corporation Methods for minimizing overdisplacement of proppant in fracture treatments
WO2016149543A1 (en) * 2015-03-17 2016-09-22 The University Of Houston System Improved superconductor compositions
US20190318849A1 (en) * 2016-06-16 2019-10-17 Fujikura Ltd. Oxide superconducting wire and method for manufacturing same
CN108963067B (zh) * 2018-07-27 2022-04-29 武汉工程大学 一种ReBa2Cu3O7-x超导薄膜上制备钉扎层的方法
CN112839742A (zh) * 2018-10-14 2021-05-25 金属氧化物技术有限责任公司 没有柱状缺陷的超导体磁通钉扎
KR102805651B1 (ko) * 2019-02-18 2025-05-13 수퍼파워, 인크. 초전도체 와이어의 제작
CN110444658B (zh) * 2019-08-13 2020-08-11 中国科学院上海微系统与信息技术研究所 基于AlMn合金超导薄膜的TES微量能器及制备方法
US20230031577A1 (en) * 2021-07-08 2023-02-02 Superq Technologies India Pvt Ltd Method and systems for fabricating superconducting nanowire single photon detector (snspd)

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EP0553593B1 (en) 1992-01-28 1996-05-29 International Business Machines Corporation Pinning structures for superconducting films and method for making same
JP2747173B2 (ja) 1992-08-07 1998-05-06 日本電信電話株式会社 酸化物高温超伝導体単結晶薄膜形成方法
DE69403104T2 (de) * 1993-02-15 1997-10-30 Sumitomo Electric Industries Verfahren zum Erzeugen einer strukturierten oxydsupraleitenden Dünnschicht
US5897945A (en) * 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
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Publication number Publication date
CN106065474A (zh) 2016-11-02
KR101485060B1 (ko) 2015-01-21
CA2768516C (en) 2015-07-14
KR20120051688A (ko) 2012-05-22
US20110028328A1 (en) 2011-02-03
WO2011017112A3 (en) 2011-04-28
EP2460197B1 (en) 2016-03-16
IN2012DN00641A (enExample) 2015-08-21
CN102484197B (zh) 2016-08-10
US8926868B2 (en) 2015-01-06
JP2013501313A (ja) 2013-01-10
EP2460197A4 (en) 2014-01-15
CA2768516A1 (en) 2011-02-10
CN106065474B (zh) 2019-05-28
CN102484197A (zh) 2012-05-30
EP2460197A2 (en) 2012-06-06
WO2011017112A2 (en) 2011-02-10

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