KR101485060B1 - 향상된 자속 고정을 위한 예비 제작된 나노 구조물을 구비한 초전도 물품 - Google Patents

향상된 자속 고정을 위한 예비 제작된 나노 구조물을 구비한 초전도 물품 Download PDF

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KR101485060B1
KR101485060B1 KR1020127003750A KR20127003750A KR101485060B1 KR 101485060 B1 KR101485060 B1 KR 101485060B1 KR 1020127003750 A KR1020127003750 A KR 1020127003750A KR 20127003750 A KR20127003750 A KR 20127003750A KR 101485060 B1 KR101485060 B1 KR 101485060B1
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KR20120051688A (ko
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벤카트 셀바마닉캄
고란 마이킥
맥심 마르체브스키
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유니버시티 오브 휴스턴 시스템
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/80Constructional details
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632Intermediate layers, e.g. for growth control
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0828Introducing flux pinning centres
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/20Permanent superconducting devices
    • H10N60/203Permanent superconducting devices comprising high-Tc ceramic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/80Constructional details
    • H10N60/85Superconducting active materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/25Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/26Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
KR1020127003750A 2009-07-28 2010-07-27 향상된 자속 고정을 위한 예비 제작된 나노 구조물을 구비한 초전도 물품 Active KR101485060B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22922509P 2009-07-28 2009-07-28
US61/229,225 2009-07-28
PCT/US2010/043411 WO2011017112A2 (en) 2009-07-28 2010-07-27 Superconducting article with prefabricated nanostructure for improved flux pinning

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Publication Number Publication Date
KR20120051688A KR20120051688A (ko) 2012-05-22
KR101485060B1 true KR101485060B1 (ko) 2015-01-21

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US (1) US8926868B2 (enExample)
EP (1) EP2460197B1 (enExample)
JP (1) JP5858912B2 (enExample)
KR (1) KR101485060B1 (enExample)
CN (2) CN106065474B (enExample)
CA (1) CA2768516C (enExample)
IN (1) IN2012DN00641A (enExample)
WO (1) WO2011017112A2 (enExample)

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US7442629B2 (en) * 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
TW201228985A (en) * 2011-01-05 2012-07-16 Univ Nat Cheng Kung Nanorod-containing precursor powder, nanorod-containing superconductor bulk and method for manufacturing the same
US9362025B1 (en) 2012-02-08 2016-06-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
US9564258B2 (en) 2012-02-08 2017-02-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
DE102013210940B3 (de) * 2013-06-12 2014-07-03 THEVA DüNNSCHICHTTECHNIK GMBH Beschichtung technischer Substrate zur Herstellung supraleitender Schichten mit hoher Sprungtemperatur
US9410394B2 (en) 2013-12-11 2016-08-09 Schlumberger Technology Corporation Methods for minimizing overdisplacement of proppant in fracture treatments
WO2016149543A1 (en) * 2015-03-17 2016-09-22 The University Of Houston System Improved superconductor compositions
US20190318849A1 (en) * 2016-06-16 2019-10-17 Fujikura Ltd. Oxide superconducting wire and method for manufacturing same
CN108963067B (zh) * 2018-07-27 2022-04-29 武汉工程大学 一种ReBa2Cu3O7-x超导薄膜上制备钉扎层的方法
CN112839742A (zh) * 2018-10-14 2021-05-25 金属氧化物技术有限责任公司 没有柱状缺陷的超导体磁通钉扎
KR102805651B1 (ko) * 2019-02-18 2025-05-13 수퍼파워, 인크. 초전도체 와이어의 제작
CN110444658B (zh) * 2019-08-13 2020-08-11 中国科学院上海微系统与信息技术研究所 基于AlMn合金超导薄膜的TES微量能器及制备方法
US20230031577A1 (en) * 2021-07-08 2023-02-02 Superq Technologies India Pvt Ltd Method and systems for fabricating superconducting nanowire single photon detector (snspd)

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JPH0656581A (ja) * 1992-08-07 1994-03-01 Nippon Telegr & Teleph Corp <Ntt> 酸化物高温超伝導体単結晶薄膜形成方法並びに酸化物高温超伝導体単結晶薄膜形成用基板及びその形成方法
US20040235670A1 (en) 2001-06-19 2004-11-25 Crisan Ioan Adrian Superconducting thin film having columnar pin retaining center using nano-dots
US20060258539A1 (en) 2003-08-29 2006-11-16 Kaname Matsumoto Superconducting film and method of manufacturing the same
US20070238619A1 (en) 2005-09-06 2007-10-11 Superpower, Inc. Superconductor components

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JPH0656581A (ja) * 1992-08-07 1994-03-01 Nippon Telegr & Teleph Corp <Ntt> 酸化物高温超伝導体単結晶薄膜形成方法並びに酸化物高温超伝導体単結晶薄膜形成用基板及びその形成方法
US20040235670A1 (en) 2001-06-19 2004-11-25 Crisan Ioan Adrian Superconducting thin film having columnar pin retaining center using nano-dots
US20060258539A1 (en) 2003-08-29 2006-11-16 Kaname Matsumoto Superconducting film and method of manufacturing the same
US20070238619A1 (en) 2005-09-06 2007-10-11 Superpower, Inc. Superconductor components

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JP5858912B2 (ja) 2016-02-10
CN106065474A (zh) 2016-11-02
CA2768516C (en) 2015-07-14
KR20120051688A (ko) 2012-05-22
US20110028328A1 (en) 2011-02-03
WO2011017112A3 (en) 2011-04-28
EP2460197B1 (en) 2016-03-16
IN2012DN00641A (enExample) 2015-08-21
CN102484197B (zh) 2016-08-10
US8926868B2 (en) 2015-01-06
JP2013501313A (ja) 2013-01-10
EP2460197A4 (en) 2014-01-15
CA2768516A1 (en) 2011-02-10
CN106065474B (zh) 2019-05-28
CN102484197A (zh) 2012-05-30
EP2460197A2 (en) 2012-06-06
WO2011017112A2 (en) 2011-02-10

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