CN106065474B - 具有用于改进的磁通钉扎的预制纳米结构的超导制品 - Google Patents
具有用于改进的磁通钉扎的预制纳米结构的超导制品 Download PDFInfo
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- CN106065474B CN106065474B CN201610511799.XA CN201610511799A CN106065474B CN 106065474 B CN106065474 B CN 106065474B CN 201610511799 A CN201610511799 A CN 201610511799A CN 106065474 B CN106065474 B CN 106065474B
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- 239000002086 nanomaterial Substances 0.000 title abstract description 21
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- 239000010949 copper Substances 0.000 description 11
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- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 9
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- 238000005118 spray pyrolysis Methods 0.000 description 3
- 229910002328 LaMnO3 Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- XTFXDIIACSLLET-UHFFFAOYSA-N [O-2].[Zr+4].[Gd+3] Chemical compound [O-2].[Zr+4].[Gd+3] XTFXDIIACSLLET-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- 239000010953 base metal Substances 0.000 description 1
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- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
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- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
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- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- -1 crystal structure Chemical compound 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- HBAGRTDVSXKKDO-UHFFFAOYSA-N dioxido(dioxo)manganese lanthanum(3+) Chemical compound [La+3].[La+3].[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O HBAGRTDVSXKKDO-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
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- 238000011031 large-scale manufacturing process Methods 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
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- 230000035899 viability Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0828—Introducing flux pinning centres
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22922509P | 2009-07-28 | 2009-07-28 | |
| US61/229,225 | 2009-07-28 | ||
| CN201080038345.6A CN102484197B (zh) | 2009-07-28 | 2010-07-27 | 具有用于改进的磁通钉扎的预制纳米结构的超导制品 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080038345.6A Division CN102484197B (zh) | 2009-07-28 | 2010-07-27 | 具有用于改进的磁通钉扎的预制纳米结构的超导制品 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106065474A CN106065474A (zh) | 2016-11-02 |
| CN106065474B true CN106065474B (zh) | 2019-05-28 |
Family
ID=43527576
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610511799.XA Active CN106065474B (zh) | 2009-07-28 | 2010-07-27 | 具有用于改进的磁通钉扎的预制纳米结构的超导制品 |
| CN201080038345.6A Active CN102484197B (zh) | 2009-07-28 | 2010-07-27 | 具有用于改进的磁通钉扎的预制纳米结构的超导制品 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080038345.6A Active CN102484197B (zh) | 2009-07-28 | 2010-07-27 | 具有用于改进的磁通钉扎的预制纳米结构的超导制品 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8926868B2 (enExample) |
| EP (1) | EP2460197B1 (enExample) |
| JP (1) | JP5858912B2 (enExample) |
| KR (1) | KR101485060B1 (enExample) |
| CN (2) | CN106065474B (enExample) |
| CA (1) | CA2768516C (enExample) |
| IN (1) | IN2012DN00641A (enExample) |
| WO (1) | WO2011017112A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442629B2 (en) * | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| TW201228985A (en) * | 2011-01-05 | 2012-07-16 | Univ Nat Cheng Kung | Nanorod-containing precursor powder, nanorod-containing superconductor bulk and method for manufacturing the same |
| US9362025B1 (en) | 2012-02-08 | 2016-06-07 | Superconductor Technologies, Inc. | Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same |
| US9564258B2 (en) | 2012-02-08 | 2017-02-07 | Superconductor Technologies, Inc. | Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same |
| DE102013210940B3 (de) * | 2013-06-12 | 2014-07-03 | THEVA DüNNSCHICHTTECHNIK GMBH | Beschichtung technischer Substrate zur Herstellung supraleitender Schichten mit hoher Sprungtemperatur |
| US9410394B2 (en) | 2013-12-11 | 2016-08-09 | Schlumberger Technology Corporation | Methods for minimizing overdisplacement of proppant in fracture treatments |
| WO2016149543A1 (en) * | 2015-03-17 | 2016-09-22 | The University Of Houston System | Improved superconductor compositions |
| US20190318849A1 (en) * | 2016-06-16 | 2019-10-17 | Fujikura Ltd. | Oxide superconducting wire and method for manufacturing same |
| CN108963067B (zh) * | 2018-07-27 | 2022-04-29 | 武汉工程大学 | 一种ReBa2Cu3O7-x超导薄膜上制备钉扎层的方法 |
| CN112839742A (zh) * | 2018-10-14 | 2021-05-25 | 金属氧化物技术有限责任公司 | 没有柱状缺陷的超导体磁通钉扎 |
| KR102805651B1 (ko) * | 2019-02-18 | 2025-05-13 | 수퍼파워, 인크. | 초전도체 와이어의 제작 |
| CN110444658B (zh) * | 2019-08-13 | 2020-08-11 | 中国科学院上海微系统与信息技术研究所 | 基于AlMn合金超导薄膜的TES微量能器及制备方法 |
| US20230031577A1 (en) * | 2021-07-08 | 2023-02-02 | Superq Technologies India Pvt Ltd | Method and systems for fabricating superconducting nanowire single photon detector (snspd) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1813317A (zh) * | 2003-06-27 | 2006-08-02 | 美国超能公司 | 新颖的超导制品及其形成和应用方法 |
| CN1842878A (zh) * | 2003-08-29 | 2006-10-04 | 独立行政法人科学技术振兴机构 | 超导膜及其制造方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0262083A (ja) | 1988-08-29 | 1990-03-01 | Canon Inc | ジョセフソン接合の形成方法およびジョセフソン接合素子 |
| EP0553593B1 (en) | 1992-01-28 | 1996-05-29 | International Business Machines Corporation | Pinning structures for superconducting films and method for making same |
| JP2747173B2 (ja) | 1992-08-07 | 1998-05-06 | 日本電信電話株式会社 | 酸化物高温超伝導体単結晶薄膜形成方法 |
| DE69403104T2 (de) * | 1993-02-15 | 1997-10-30 | Sumitomo Electric Industries | Verfahren zum Erzeugen einer strukturierten oxydsupraleitenden Dünnschicht |
| US5897945A (en) * | 1996-02-26 | 1999-04-27 | President And Fellows Of Harvard College | Metal oxide nanorods |
| US6190752B1 (en) | 1997-11-13 | 2001-02-20 | Board Of Trustees Of The Leland Stanford Junior University | Thin films having rock-salt-like structure deposited on amorphous surfaces |
| US8119571B2 (en) * | 2006-08-03 | 2012-02-21 | Amit Goyal | High performance electrical, magnetic, electromagnetic and electrooptical devices enabled by three dimensionally ordered nanodots and nanorods |
| JP3622147B2 (ja) * | 2001-06-19 | 2005-02-23 | 独立行政法人産業技術総合研究所 | 柱状ピン止め中心を有する超伝導薄膜及びその製造方法 |
| US8178165B2 (en) * | 2005-01-21 | 2012-05-15 | The Regents Of The University Of California | Method for fabricating a long-range ordered periodic array of nano-features, and articles comprising same |
| JP2006233247A (ja) | 2005-02-23 | 2006-09-07 | Fujikura Ltd | 薄膜形成装置 |
| US8034745B2 (en) * | 2005-08-01 | 2011-10-11 | Amit Goyal | High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods |
| US20070238619A1 (en) * | 2005-09-06 | 2007-10-11 | Superpower, Inc. | Superconductor components |
| CN101842909A (zh) | 2007-07-19 | 2010-09-22 | 加利福尼亚技术学院 | 半导体的有序阵列结构 |
| JP5017161B2 (ja) * | 2008-03-27 | 2012-09-05 | 株式会社東芝 | 酸化物超電導体 |
| US7919435B2 (en) * | 2008-09-30 | 2011-04-05 | Ut-Battelle, Llc | Superconductor films with improved flux pinning and reduced AC losses |
-
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1813317A (zh) * | 2003-06-27 | 2006-08-02 | 美国超能公司 | 新颖的超导制品及其形成和应用方法 |
| CN1842878A (zh) * | 2003-08-29 | 2006-10-04 | 独立行政法人科学技术振兴机构 | 超导膜及其制造方法 |
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| JP5858912B2 (ja) | 2016-02-10 |
| CN106065474A (zh) | 2016-11-02 |
| KR101485060B1 (ko) | 2015-01-21 |
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| KR20120051688A (ko) | 2012-05-22 |
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| WO2011017112A3 (en) | 2011-04-28 |
| EP2460197B1 (en) | 2016-03-16 |
| IN2012DN00641A (enExample) | 2015-08-21 |
| CN102484197B (zh) | 2016-08-10 |
| US8926868B2 (en) | 2015-01-06 |
| JP2013501313A (ja) | 2013-01-10 |
| EP2460197A4 (en) | 2014-01-15 |
| CA2768516A1 (en) | 2011-02-10 |
| CN102484197A (zh) | 2012-05-30 |
| EP2460197A2 (en) | 2012-06-06 |
| WO2011017112A2 (en) | 2011-02-10 |
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