CN102484197B - 具有用于改进的磁通钉扎的预制纳米结构的超导制品 - Google Patents

具有用于改进的磁通钉扎的预制纳米结构的超导制品 Download PDF

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CN102484197B
CN102484197B CN201080038345.6A CN201080038345A CN102484197B CN 102484197 B CN102484197 B CN 102484197B CN 201080038345 A CN201080038345 A CN 201080038345A CN 102484197 B CN102484197 B CN 102484197B
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nanometer rods
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nanometer
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CN102484197A (zh
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文卡特·塞尔瓦马尼坎
戈兰·迈基奇
马克西姆·马尔切夫斯基
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University of Houston System
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0828—Introducing flux pinning centres
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
CN201080038345.6A 2009-07-28 2010-07-27 具有用于改进的磁通钉扎的预制纳米结构的超导制品 Active CN102484197B (zh)

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CN201610511799.XA CN106065474B (zh) 2009-07-28 2010-07-27 具有用于改进的磁通钉扎的预制纳米结构的超导制品

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US22922509P 2009-07-28 2009-07-28
US61/229,225 2009-07-28
PCT/US2010/043411 WO2011017112A2 (en) 2009-07-28 2010-07-27 Superconducting article with prefabricated nanostructure for improved flux pinning

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CN102484197B true CN102484197B (zh) 2016-08-10

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CN201610511799.XA Active CN106065474B (zh) 2009-07-28 2010-07-27 具有用于改进的磁通钉扎的预制纳米结构的超导制品

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US (1) US8926868B2 (enExample)
EP (1) EP2460197B1 (enExample)
JP (1) JP5858912B2 (enExample)
KR (1) KR101485060B1 (enExample)
CN (2) CN102484197B (enExample)
CA (1) CA2768516C (enExample)
IN (1) IN2012DN00641A (enExample)
WO (1) WO2011017112A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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US7442629B2 (en) * 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
TW201228985A (en) * 2011-01-05 2012-07-16 Univ Nat Cheng Kung Nanorod-containing precursor powder, nanorod-containing superconductor bulk and method for manufacturing the same
US9362025B1 (en) 2012-02-08 2016-06-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
US9564258B2 (en) 2012-02-08 2017-02-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
DE102013210940B3 (de) * 2013-06-12 2014-07-03 THEVA DüNNSCHICHTTECHNIK GMBH Beschichtung technischer Substrate zur Herstellung supraleitender Schichten mit hoher Sprungtemperatur
US9410394B2 (en) 2013-12-11 2016-08-09 Schlumberger Technology Corporation Methods for minimizing overdisplacement of proppant in fracture treatments
WO2016149543A1 (en) * 2015-03-17 2016-09-22 The University Of Houston System Improved superconductor compositions
JPWO2017217487A1 (ja) * 2016-06-16 2019-04-11 株式会社フジクラ 酸化物超電導線材及びその製造方法
CN108963067B (zh) * 2018-07-27 2022-04-29 武汉工程大学 一种ReBa2Cu3O7-x超导薄膜上制备钉扎层的方法
KR102776826B1 (ko) * 2018-10-14 2025-03-05 메트옥스 인터내셔널 인코포레이티드 열 형 결함이 없는 초전도체 플럭스 피닝
EP3928359B8 (en) * 2019-02-18 2025-08-06 Superpower, Inc. Superconductor wire and fabrication thereof
CN110444658B (zh) * 2019-08-13 2020-08-11 中国科学院上海微系统与信息技术研究所 基于AlMn合金超导薄膜的TES微量能器及制备方法
US20230031577A1 (en) * 2021-07-08 2023-02-02 Superq Technologies India Pvt Ltd Method and systems for fabricating superconducting nanowire single photon detector (snspd)

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WO2006078952A1 (en) * 2005-01-21 2006-07-27 University Of California Methods for fabricating a long-range ordered periodic array of nano-features, and articles comprising same
CN1813317A (zh) * 2003-06-27 2006-08-02 美国超能公司 新颖的超导制品及其形成和应用方法
US20060258539A1 (en) * 2003-08-29 2006-11-16 Kaname Matsumoto Superconducting film and method of manufacturing the same
US20070238619A1 (en) * 2005-09-06 2007-10-11 Superpower, Inc. Superconductor components
US20080176749A1 (en) * 2005-08-01 2008-07-24 Amit Goyal High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods
US7491678B2 (en) * 2001-06-19 2009-02-17 Japan Science And Technology Agency Superconducting thin film having columnar pin retaining center using nano-dots

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DE69211117T2 (de) 1992-01-28 1996-12-12 Ibm Flussschlauch-Verankerungsstrukturen für supraleitende Dünnschichten und Methoden ihrer Herstellung
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US7491678B2 (en) * 2001-06-19 2009-02-17 Japan Science And Technology Agency Superconducting thin film having columnar pin retaining center using nano-dots
CN1813317A (zh) * 2003-06-27 2006-08-02 美国超能公司 新颖的超导制品及其形成和应用方法
US20060258539A1 (en) * 2003-08-29 2006-11-16 Kaname Matsumoto Superconducting film and method of manufacturing the same
WO2006078952A1 (en) * 2005-01-21 2006-07-27 University Of California Methods for fabricating a long-range ordered periodic array of nano-features, and articles comprising same
US20080176749A1 (en) * 2005-08-01 2008-07-24 Amit Goyal High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods
US20070238619A1 (en) * 2005-09-06 2007-10-11 Superpower, Inc. Superconductor components

Also Published As

Publication number Publication date
CN106065474B (zh) 2019-05-28
WO2011017112A3 (en) 2011-04-28
EP2460197A4 (en) 2014-01-15
IN2012DN00641A (enExample) 2015-08-21
CN102484197A (zh) 2012-05-30
CN106065474A (zh) 2016-11-02
US8926868B2 (en) 2015-01-06
EP2460197B1 (en) 2016-03-16
KR20120051688A (ko) 2012-05-22
CA2768516C (en) 2015-07-14
JP2013501313A (ja) 2013-01-10
KR101485060B1 (ko) 2015-01-21
WO2011017112A2 (en) 2011-02-10
US20110028328A1 (en) 2011-02-03
JP5858912B2 (ja) 2016-02-10
EP2460197A2 (en) 2012-06-06
CA2768516A1 (en) 2011-02-10

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