JP5847184B2 - 浸漬低インダクタンスｒｆコイル及びマルチカスプ磁気配列を用いた誘導結合型プラズマフラッドガン - Google Patents

浸漬低インダクタンスｒｆコイル及びマルチカスプ磁気配列を用いた誘導結合型プラズマフラッドガン Download PDF

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JP5847184B2
JP5847184B2 JP2013532983A JP2013532983A JP5847184B2 JP 5847184 B2 JP5847184 B2 JP 5847184B2 JP 2013532983 A JP2013532983 A JP 2013532983A JP 2013532983 A JP2013532983 A JP 2013532983A JP 5847184 B2 JP5847184 B2 JP 5847184B2
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plasma
magnets
coil
plasma chamber
pair
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JP2013546122A (ja
JP2013546122A5 (https=
Inventor
エフ クルンクジ ピーター
エフ クルンクジ ピーター
エム バンヴェニスト ヴィクター
エム バンヴェニスト ヴィクター
ヴィ ナウモヴスキー オリバー
ヴィ ナウモヴスキー オリバー
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ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/032—Mounting or supporting

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
JP2013532983A 2010-10-08 2011-10-07 浸漬低インダクタンスｒｆコイル及びマルチカスプ磁気配列を用いた誘導結合型プラズマフラッドガン Active JP5847184B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/901,198 US8471476B2 (en) 2010-10-08 2010-10-08 Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement
US12/901,198 2010-10-08
PCT/US2011/055425 WO2012048256A1 (en) 2010-10-08 2011-10-07 Inductively coupled plasma flood gun using an immersed low inductance rf coil and multicusp magnetic arrangement

Publications (3)

Publication Number Publication Date
JP2013546122A JP2013546122A (ja) 2013-12-26
JP2013546122A5 JP2013546122A5 (https=) 2014-07-31
JP5847184B2 true JP5847184B2 (ja) 2016-01-20

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JP2013532983A Active JP5847184B2 (ja) 2010-10-08 2011-10-07 浸漬低インダクタンスｒｆコイル及びマルチカスプ磁気配列を用いた誘導結合型プラズマフラッドガン

Country Status (6)

Country Link
US (2) US8471476B2 (https=)
JP (1) JP5847184B2 (https=)
KR (1) KR101631159B1 (https=)
CN (1) CN103250228B (https=)
TW (1) TWI503859B (https=)
WO (1) WO2012048256A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3002639B2 (ja) 1996-01-17 2000-01-24 四国電力株式会社 フィルタユニット

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9865422B2 (en) * 2013-03-15 2018-01-09 Nissin Ion Equipment Co., Ltd. Plasma generator with at least one non-metallic component
HK1220287A1 (zh) 2013-03-15 2017-04-28 Glenn Lane Family Limited Liability Limited Partnership 可调节的质量分辨孔
US9959941B2 (en) 2013-04-03 2018-05-01 Lockheed Martin Corporation System for supporting structures immersed in plasma
US9928927B2 (en) 2013-04-03 2018-03-27 Lockheed Martin Corporation Heating plasma for fusion power using magnetic field oscillation
US9959942B2 (en) 2013-04-03 2018-05-01 Lockheed Martin Corporation Encapsulating magnetic fields for plasma confinement
US10049773B2 (en) 2013-04-03 2018-08-14 Lockheed Martin Corporation Heating plasma for fusion power using neutral beam injection
US9934876B2 (en) 2013-04-03 2018-04-03 Lockheed Martin Corporation Magnetic field plasma confinement for compact fusion power
US9384937B2 (en) * 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter
US9299536B2 (en) * 2013-10-17 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Wide metal-free plasma flood gun
US9070538B2 (en) * 2013-10-25 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization
US9543110B2 (en) 2013-12-20 2017-01-10 Axcelis Technologies, Inc. Reduced trace metals contamination ion source for an ion implantation system
CN104037044B (zh) * 2014-07-09 2016-09-28 北京中科信电子装备有限公司 一种离子束垂直聚焦装置
CN104797071B (zh) * 2015-04-16 2018-09-04 中国科学院等离子体物理研究所 一种磁约束天线内置式射频离子源
US10643823B2 (en) * 2018-09-07 2020-05-05 Varian Semiconductor Equipment Associates, Inc. Foam in ion implantation system
US11222768B2 (en) * 2018-09-07 2022-01-11 Varian Semiconductor Equipment Associates, Inc. Foam in ion implantation system
JP2020163377A (ja) * 2019-03-26 2020-10-08 泰男 石川 プラズマ反応方法及びプラズマ反応装置
WO2020196535A1 (ja) * 2019-03-26 2020-10-01 泰男 石川 プラズマ反応方法及びプラズマ反応装置
JPWO2021079843A1 (https=) * 2019-10-21 2021-04-29
US11562885B2 (en) 2020-07-28 2023-01-24 Applied Materials, Inc. Particle yield via beam-line pressure control
US11830705B2 (en) * 2020-08-20 2023-11-28 PIE Scientific LLC Plasma flood gun for charged particle apparatus
US20240371602A1 (en) * 2023-05-05 2024-11-07 Applied Materials, Inc. Heated Plasma Flood Gun Sweeper

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0339554A3 (de) * 1988-04-26 1989-12-20 Hauzer Holding B.V. Hochfrequenz-Ionenstrahlquelle
US5466929A (en) 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
JP3054302B2 (ja) * 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
DE4241927C2 (de) 1992-12-11 1994-09-22 Max Planck Gesellschaft Zur Anordnung in einem Vakuumgefäß geeignete selbsttragende isolierte Elektrodenanordnung, insbesondere Antennenspule für einen Hochfrequenz-Plasmagenerator
US5354381A (en) 1993-05-07 1994-10-11 Varian Associates, Inc. Plasma immersion ion implantation (PI3) apparatus
US5589737A (en) 1994-12-06 1996-12-31 Lam Research Corporation Plasma processor for large workpieces
US5757018A (en) 1995-12-11 1998-05-26 Varian Associates, Inc. Zero deflection magnetically-suppressed Faraday for ion implanters
US5686796A (en) * 1995-12-20 1997-11-11 International Business Machines Corporation Ion implantation helicon plasma source with magnetic dipoles
JP3739137B2 (ja) * 1996-06-18 2006-01-25 日本電気株式会社 プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置
US6388381B2 (en) * 1996-09-10 2002-05-14 The Regents Of The University Of California Constricted glow discharge plasma source
GB9710380D0 (en) 1997-05-20 1997-07-16 Applied Materials Inc Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation
US5877471A (en) * 1997-06-11 1999-03-02 The Regents Of The University Of California Plasma torch having a cooled shield assembly
US6271529B1 (en) 1997-12-01 2001-08-07 Ebara Corporation Ion implantation with charge neutralization
JPH11317299A (ja) * 1998-02-17 1999-11-16 Toshiba Corp 高周波放電方法及びその装置並びに高周波処理装置
US6135128A (en) * 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
US6178919B1 (en) 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6313428B1 (en) 1999-10-12 2001-11-06 Advanced Ion Beam Technology, Inc. Apparatus and method for reducing space charge of ion beams and wafer charging
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US20020185226A1 (en) 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
JP3387488B2 (ja) 2000-12-01 2003-03-17 日新電機株式会社 イオンビーム照射装置
JP3912993B2 (ja) 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP3758520B2 (ja) 2001-04-26 2006-03-22 日新イオン機器株式会社 イオンビーム照射装置および関連の方法
US6891173B2 (en) * 2001-10-26 2005-05-10 Varian Semiconductor Equipment Associates, Inc. Ion implantation systems and methods utilizing a downstream gas source
GB0128913D0 (en) 2001-12-03 2002-01-23 Applied Materials Inc Improvements in ion sources for ion implantation apparatus
JP3680274B2 (ja) 2002-03-27 2005-08-10 住友イートンノバ株式会社 イオンビームの電荷中和装置とその方法
JP2004055614A (ja) 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
JP2004055600A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
TW200420201A (en) * 2002-12-16 2004-10-01 Japan Science & Tech Agency Plasma generation device, plasma control method and substrate manufacturing method
JP2004281232A (ja) 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
US7199064B2 (en) 2003-09-08 2007-04-03 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
JP3742638B2 (ja) 2003-09-19 2006-02-08 アプライド マテリアルズ インコーポレイテッド エレクトロンフラッド装置及びイオン注入装置
US7402816B2 (en) * 2004-11-19 2008-07-22 Varian Semiconductor Equipment Associates, Inc. Electron injection in ion implanter magnets
JP4533112B2 (ja) * 2004-11-30 2010-09-01 株式会社Sen ウエハ帯電抑制装置及びこれを備えたイオン注入装置
US7820020B2 (en) * 2005-02-03 2010-10-26 Applied Materials, Inc. Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
US20070137576A1 (en) * 2005-12-19 2007-06-21 Varian Semiconductor Equipment Associates, Inc. Technique for providing an inductively coupled radio frequency plasma flood gun
CN101341570A (zh) * 2005-12-19 2009-01-07 瓦里安半导体设备公司 提供感应耦合射频电浆浸没枪的技术
JP4001185B1 (ja) * 2007-03-06 2007-10-31 日新イオン機器株式会社 プラズマ発生装置
US7800083B2 (en) 2007-11-06 2010-09-21 Axcelis Technologies, Inc. Plasma electron flood for ion beam implanter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3002639B2 (ja) 1996-01-17 2000-01-24 四国電力株式会社 フィルタユニット

Also Published As

Publication number Publication date
TW201227795A (en) 2012-07-01
TWI503859B (zh) 2015-10-11
JP2013546122A (ja) 2013-12-26
CN103250228B (zh) 2016-01-13
US20130320854A1 (en) 2013-12-05
US8847496B2 (en) 2014-09-30
KR101631159B1 (ko) 2016-06-17
CN103250228A (zh) 2013-08-14
WO2012048256A1 (en) 2012-04-12
US8471476B2 (en) 2013-06-25
US20120085917A1 (en) 2012-04-12
KR20130126603A (ko) 2013-11-20

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