JP2013546122A5 - - Google Patents
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- Publication number
- JP2013546122A5 JP2013546122A5 JP2013532983A JP2013532983A JP2013546122A5 JP 2013546122 A5 JP2013546122 A5 JP 2013546122A5 JP 2013532983 A JP2013532983 A JP 2013532983A JP 2013532983 A JP2013532983 A JP 2013532983A JP 2013546122 A5 JP2013546122 A5 JP 2013546122A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- magnets
- pair
- flood gun
- plasma chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910002804 graphite Inorganic materials 0.000 claims 2
- 239000010439 graphite Substances 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005591 charge neutralization Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
Images
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/901,198 US8471476B2 (en) | 2010-10-08 | 2010-10-08 | Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement |
| US12/901,198 | 2010-10-08 | ||
| PCT/US2011/055425 WO2012048256A1 (en) | 2010-10-08 | 2011-10-07 | Inductively coupled plasma flood gun using an immersed low inductance rf coil and multicusp magnetic arrangement |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013546122A JP2013546122A (ja) | 2013-12-26 |
| JP2013546122A5 true JP2013546122A5 (https=) | 2014-07-31 |
| JP5847184B2 JP5847184B2 (ja) | 2016-01-20 |
Family
ID=44800293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013532983A Active JP5847184B2 (ja) | 2010-10-08 | 2011-10-07 | 浸漬低インダクタンスrfコイル及びマルチカスプ磁気配列を用いた誘導結合型プラズマフラッドガン |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8471476B2 (https=) |
| JP (1) | JP5847184B2 (https=) |
| KR (1) | KR101631159B1 (https=) |
| CN (1) | CN103250228B (https=) |
| TW (1) | TWI503859B (https=) |
| WO (1) | WO2012048256A1 (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3002639B2 (ja) | 1996-01-17 | 2000-01-24 | 四国電力株式会社 | フィルタユニット |
| US9865422B2 (en) * | 2013-03-15 | 2018-01-09 | Nissin Ion Equipment Co., Ltd. | Plasma generator with at least one non-metallic component |
| HK1220287A1 (zh) | 2013-03-15 | 2017-04-28 | Glenn Lane Family Limited Liability Limited Partnership | 可调节的质量分辨孔 |
| US9959941B2 (en) | 2013-04-03 | 2018-05-01 | Lockheed Martin Corporation | System for supporting structures immersed in plasma |
| US9928927B2 (en) | 2013-04-03 | 2018-03-27 | Lockheed Martin Corporation | Heating plasma for fusion power using magnetic field oscillation |
| US9959942B2 (en) | 2013-04-03 | 2018-05-01 | Lockheed Martin Corporation | Encapsulating magnetic fields for plasma confinement |
| US10049773B2 (en) | 2013-04-03 | 2018-08-14 | Lockheed Martin Corporation | Heating plasma for fusion power using neutral beam injection |
| US9934876B2 (en) | 2013-04-03 | 2018-04-03 | Lockheed Martin Corporation | Magnetic field plasma confinement for compact fusion power |
| US9384937B2 (en) * | 2013-09-27 | 2016-07-05 | Varian Semiconductor Equipment Associates, Inc. | SiC coating in an ion implanter |
| US9299536B2 (en) * | 2013-10-17 | 2016-03-29 | Varian Semiconductor Equipment Associates, Inc. | Wide metal-free plasma flood gun |
| US9070538B2 (en) * | 2013-10-25 | 2015-06-30 | Varian Semiconductor Equipment Associates, Inc. | Pinched plasma bridge flood gun for substrate charge neutralization |
| US9543110B2 (en) | 2013-12-20 | 2017-01-10 | Axcelis Technologies, Inc. | Reduced trace metals contamination ion source for an ion implantation system |
| CN104037044B (zh) * | 2014-07-09 | 2016-09-28 | 北京中科信电子装备有限公司 | 一种离子束垂直聚焦装置 |
| CN104797071B (zh) * | 2015-04-16 | 2018-09-04 | 中国科学院等离子体物理研究所 | 一种磁约束天线内置式射频离子源 |
| US10643823B2 (en) * | 2018-09-07 | 2020-05-05 | Varian Semiconductor Equipment Associates, Inc. | Foam in ion implantation system |
| US11222768B2 (en) * | 2018-09-07 | 2022-01-11 | Varian Semiconductor Equipment Associates, Inc. | Foam in ion implantation system |
| JP2020163377A (ja) * | 2019-03-26 | 2020-10-08 | 泰男 石川 | プラズマ反応方法及びプラズマ反応装置 |
| WO2020196535A1 (ja) * | 2019-03-26 | 2020-10-01 | 泰男 石川 | プラズマ反応方法及びプラズマ反応装置 |
| JPWO2021079843A1 (https=) * | 2019-10-21 | 2021-04-29 | ||
| US11562885B2 (en) | 2020-07-28 | 2023-01-24 | Applied Materials, Inc. | Particle yield via beam-line pressure control |
| US11830705B2 (en) * | 2020-08-20 | 2023-11-28 | PIE Scientific LLC | Plasma flood gun for charged particle apparatus |
| US20240371602A1 (en) * | 2023-05-05 | 2024-11-07 | Applied Materials, Inc. | Heated Plasma Flood Gun Sweeper |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0339554A3 (de) * | 1988-04-26 | 1989-12-20 | Hauzer Holding B.V. | Hochfrequenz-Ionenstrahlquelle |
| US5466929A (en) | 1992-02-21 | 1995-11-14 | Hitachi, Ltd. | Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus |
| JP3054302B2 (ja) * | 1992-12-02 | 2000-06-19 | アプライド マテリアルズ インコーポレイテッド | イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム |
| DE4241927C2 (de) | 1992-12-11 | 1994-09-22 | Max Planck Gesellschaft | Zur Anordnung in einem Vakuumgefäß geeignete selbsttragende isolierte Elektrodenanordnung, insbesondere Antennenspule für einen Hochfrequenz-Plasmagenerator |
| US5354381A (en) | 1993-05-07 | 1994-10-11 | Varian Associates, Inc. | Plasma immersion ion implantation (PI3) apparatus |
| US5589737A (en) | 1994-12-06 | 1996-12-31 | Lam Research Corporation | Plasma processor for large workpieces |
| US5757018A (en) | 1995-12-11 | 1998-05-26 | Varian Associates, Inc. | Zero deflection magnetically-suppressed Faraday for ion implanters |
| US5686796A (en) * | 1995-12-20 | 1997-11-11 | International Business Machines Corporation | Ion implantation helicon plasma source with magnetic dipoles |
| JP3739137B2 (ja) * | 1996-06-18 | 2006-01-25 | 日本電気株式会社 | プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置 |
| US6388381B2 (en) * | 1996-09-10 | 2002-05-14 | The Regents Of The University Of California | Constricted glow discharge plasma source |
| GB9710380D0 (en) | 1997-05-20 | 1997-07-16 | Applied Materials Inc | Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation |
| US5877471A (en) * | 1997-06-11 | 1999-03-02 | The Regents Of The University Of California | Plasma torch having a cooled shield assembly |
| US6271529B1 (en) | 1997-12-01 | 2001-08-07 | Ebara Corporation | Ion implantation with charge neutralization |
| JPH11317299A (ja) * | 1998-02-17 | 1999-11-16 | Toshiba Corp | 高周波放電方法及びその装置並びに高周波処理装置 |
| US6135128A (en) * | 1998-03-27 | 2000-10-24 | Eaton Corporation | Method for in-process cleaning of an ion source |
| US6178919B1 (en) | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
| US6589437B1 (en) | 1999-03-05 | 2003-07-08 | Applied Materials, Inc. | Active species control with time-modulated plasma |
| US6313428B1 (en) | 1999-10-12 | 2001-11-06 | Advanced Ion Beam Technology, Inc. | Apparatus and method for reducing space charge of ion beams and wafer charging |
| JP4371543B2 (ja) | 2000-06-29 | 2009-11-25 | 日本電気株式会社 | リモートプラズマcvd装置及び膜形成方法 |
| US20020185226A1 (en) | 2000-08-10 | 2002-12-12 | Lea Leslie Michael | Plasma processing apparatus |
| JP3387488B2 (ja) | 2000-12-01 | 2003-03-17 | 日新電機株式会社 | イオンビーム照射装置 |
| JP3912993B2 (ja) | 2001-03-26 | 2007-05-09 | 株式会社荏原製作所 | 中性粒子ビーム処理装置 |
| JP3758520B2 (ja) | 2001-04-26 | 2006-03-22 | 日新イオン機器株式会社 | イオンビーム照射装置および関連の方法 |
| US6891173B2 (en) * | 2001-10-26 | 2005-05-10 | Varian Semiconductor Equipment Associates, Inc. | Ion implantation systems and methods utilizing a downstream gas source |
| GB0128913D0 (en) | 2001-12-03 | 2002-01-23 | Applied Materials Inc | Improvements in ion sources for ion implantation apparatus |
| JP3680274B2 (ja) | 2002-03-27 | 2005-08-10 | 住友イートンノバ株式会社 | イオンビームの電荷中和装置とその方法 |
| JP2004055614A (ja) | 2002-07-16 | 2004-02-19 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP2004055600A (ja) * | 2002-07-16 | 2004-02-19 | Tokyo Electron Ltd | プラズマ処理装置 |
| TW200420201A (en) * | 2002-12-16 | 2004-10-01 | Japan Science & Tech Agency | Plasma generation device, plasma control method and substrate manufacturing method |
| JP2004281232A (ja) | 2003-03-14 | 2004-10-07 | Ebara Corp | ビーム源及びビーム処理装置 |
| US7199064B2 (en) | 2003-09-08 | 2007-04-03 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus |
| JP3742638B2 (ja) | 2003-09-19 | 2006-02-08 | アプライド マテリアルズ インコーポレイテッド | エレクトロンフラッド装置及びイオン注入装置 |
| US7402816B2 (en) * | 2004-11-19 | 2008-07-22 | Varian Semiconductor Equipment Associates, Inc. | Electron injection in ion implanter magnets |
| JP4533112B2 (ja) * | 2004-11-30 | 2010-09-01 | 株式会社Sen | ウエハ帯電抑制装置及びこれを備えたイオン注入装置 |
| US7820020B2 (en) * | 2005-02-03 | 2010-10-26 | Applied Materials, Inc. | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas |
| US20070137576A1 (en) * | 2005-12-19 | 2007-06-21 | Varian Semiconductor Equipment Associates, Inc. | Technique for providing an inductively coupled radio frequency plasma flood gun |
| CN101341570A (zh) * | 2005-12-19 | 2009-01-07 | 瓦里安半导体设备公司 | 提供感应耦合射频电浆浸没枪的技术 |
| JP4001185B1 (ja) * | 2007-03-06 | 2007-10-31 | 日新イオン機器株式会社 | プラズマ発生装置 |
| US7800083B2 (en) | 2007-11-06 | 2010-09-21 | Axcelis Technologies, Inc. | Plasma electron flood for ion beam implanter |
-
2010
- 2010-10-08 US US12/901,198 patent/US8471476B2/en active Active
-
2011
- 2011-10-07 WO PCT/US2011/055425 patent/WO2012048256A1/en not_active Ceased
- 2011-10-07 KR KR1020137010997A patent/KR101631159B1/ko active Active
- 2011-10-07 JP JP2013532983A patent/JP5847184B2/ja active Active
- 2011-10-07 CN CN201180055640.7A patent/CN103250228B/zh active Active
- 2011-10-11 TW TW100136747A patent/TWI503859B/zh active
-
2013
- 2013-05-22 US US13/899,767 patent/US8847496B2/en active Active
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