CN103250228B - 使用于离子布植系统中的等离子体流体枪及其提供方法 - Google Patents

使用于离子布植系统中的等离子体流体枪及其提供方法 Download PDF

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Publication number
CN103250228B
CN103250228B CN201180055640.7A CN201180055640A CN103250228B CN 103250228 B CN103250228 B CN 103250228B CN 201180055640 A CN201180055640 A CN 201180055640A CN 103250228 B CN103250228 B CN 103250228B
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China
Prior art keywords
plasma
plasma chamber
magnets
ion implantation
pair
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CN201180055640.7A
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English (en)
Chinese (zh)
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CN103250228A (zh
Inventor
彼得·F·库鲁尼西
维克多·M·本夫尼斯特
奥利佛·V·那莫佛斯奇
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/032—Mounting or supporting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
CN201180055640.7A 2010-10-08 2011-10-07 使用于离子布植系统中的等离子体流体枪及其提供方法 Active CN103250228B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/901,198 US8471476B2 (en) 2010-10-08 2010-10-08 Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement
US12/901,198 2010-10-08
PCT/US2011/055425 WO2012048256A1 (en) 2010-10-08 2011-10-07 Inductively coupled plasma flood gun using an immersed low inductance rf coil and multicusp magnetic arrangement

Publications (2)

Publication Number Publication Date
CN103250228A CN103250228A (zh) 2013-08-14
CN103250228B true CN103250228B (zh) 2016-01-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180055640.7A Active CN103250228B (zh) 2010-10-08 2011-10-07 使用于离子布植系统中的等离子体流体枪及其提供方法

Country Status (6)

Country Link
US (2) US8471476B2 (https=)
JP (1) JP5847184B2 (https=)
KR (1) KR101631159B1 (https=)
CN (1) CN103250228B (https=)
TW (1) TWI503859B (https=)
WO (1) WO2012048256A1 (https=)

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US9959941B2 (en) 2013-04-03 2018-05-01 Lockheed Martin Corporation System for supporting structures immersed in plasma
US9928927B2 (en) 2013-04-03 2018-03-27 Lockheed Martin Corporation Heating plasma for fusion power using magnetic field oscillation
US9959942B2 (en) 2013-04-03 2018-05-01 Lockheed Martin Corporation Encapsulating magnetic fields for plasma confinement
US10049773B2 (en) 2013-04-03 2018-08-14 Lockheed Martin Corporation Heating plasma for fusion power using neutral beam injection
US9934876B2 (en) 2013-04-03 2018-04-03 Lockheed Martin Corporation Magnetic field plasma confinement for compact fusion power
US9384937B2 (en) * 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter
US9299536B2 (en) * 2013-10-17 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Wide metal-free plasma flood gun
US9070538B2 (en) * 2013-10-25 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization
US9543110B2 (en) 2013-12-20 2017-01-10 Axcelis Technologies, Inc. Reduced trace metals contamination ion source for an ion implantation system
CN104037044B (zh) * 2014-07-09 2016-09-28 北京中科信电子装备有限公司 一种离子束垂直聚焦装置
CN104797071B (zh) * 2015-04-16 2018-09-04 中国科学院等离子体物理研究所 一种磁约束天线内置式射频离子源
US10643823B2 (en) * 2018-09-07 2020-05-05 Varian Semiconductor Equipment Associates, Inc. Foam in ion implantation system
US11222768B2 (en) * 2018-09-07 2022-01-11 Varian Semiconductor Equipment Associates, Inc. Foam in ion implantation system
JP2020163377A (ja) * 2019-03-26 2020-10-08 泰男 石川 プラズマ反応方法及びプラズマ反応装置
WO2020196535A1 (ja) * 2019-03-26 2020-10-01 泰男 石川 プラズマ反応方法及びプラズマ反応装置
JPWO2021079843A1 (https=) * 2019-10-21 2021-04-29
US11562885B2 (en) 2020-07-28 2023-01-24 Applied Materials, Inc. Particle yield via beam-line pressure control
US11830705B2 (en) * 2020-08-20 2023-11-28 PIE Scientific LLC Plasma flood gun for charged particle apparatus
US20240371602A1 (en) * 2023-05-05 2024-11-07 Applied Materials, Inc. Heated Plasma Flood Gun Sweeper

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US6135128A (en) * 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
CN101103432A (zh) * 2004-11-19 2008-01-09 瓦里安半导体设备公司 离子注入机磁铁中的电子注入
CN101341570A (zh) * 2005-12-19 2009-01-07 瓦里安半导体设备公司 提供感应耦合射频电浆浸没枪的技术

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US5434353A (en) * 1992-12-11 1995-07-18 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Berlin Self-supporting insulated conductor arrangement suitable for arrangement in a vacuum container
US6135128A (en) * 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
CN101103432A (zh) * 2004-11-19 2008-01-09 瓦里安半导体设备公司 离子注入机磁铁中的电子注入
CN101341570A (zh) * 2005-12-19 2009-01-07 瓦里安半导体设备公司 提供感应耦合射频电浆浸没枪的技术

Also Published As

Publication number Publication date
TW201227795A (en) 2012-07-01
TWI503859B (zh) 2015-10-11
JP2013546122A (ja) 2013-12-26
US20130320854A1 (en) 2013-12-05
JP5847184B2 (ja) 2016-01-20
US8847496B2 (en) 2014-09-30
KR101631159B1 (ko) 2016-06-17
CN103250228A (zh) 2013-08-14
WO2012048256A1 (en) 2012-04-12
US8471476B2 (en) 2013-06-25
US20120085917A1 (en) 2012-04-12
KR20130126603A (ko) 2013-11-20

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