TWI503859B - 使用於離子佈植系統中的電漿流體槍以及提供離子佈植系統中的電漿流體槍之方法 - Google Patents

使用於離子佈植系統中的電漿流體槍以及提供離子佈植系統中的電漿流體槍之方法 Download PDF

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Publication number
TWI503859B
TWI503859B TW100136747A TW100136747A TWI503859B TW I503859 B TWI503859 B TW I503859B TW 100136747 A TW100136747 A TW 100136747A TW 100136747 A TW100136747 A TW 100136747A TW I503859 B TWI503859 B TW I503859B
Authority
TW
Taiwan
Prior art keywords
plasma
magnets
ion implantation
plasma chamber
pair
Prior art date
Application number
TW100136747A
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English (en)
Chinese (zh)
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TW201227795A (en
Inventor
Peter F Kurunczi
Victor M Benveniste
Oliver V Naumovski
Original Assignee
Varian Semiconductor Equipment
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Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW201227795A publication Critical patent/TW201227795A/zh
Application granted granted Critical
Publication of TWI503859B publication Critical patent/TWI503859B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/032—Mounting or supporting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
TW100136747A 2010-10-08 2011-10-11 使用於離子佈植系統中的電漿流體槍以及提供離子佈植系統中的電漿流體槍之方法 TWI503859B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/901,198 US8471476B2 (en) 2010-10-08 2010-10-08 Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement

Publications (2)

Publication Number Publication Date
TW201227795A TW201227795A (en) 2012-07-01
TWI503859B true TWI503859B (zh) 2015-10-11

Family

ID=44800293

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100136747A TWI503859B (zh) 2010-10-08 2011-10-11 使用於離子佈植系統中的電漿流體槍以及提供離子佈植系統中的電漿流體槍之方法

Country Status (6)

Country Link
US (2) US8471476B2 (https=)
JP (1) JP5847184B2 (https=)
KR (1) KR101631159B1 (https=)
CN (1) CN103250228B (https=)
TW (1) TWI503859B (https=)
WO (1) WO2012048256A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3002639B2 (ja) 1996-01-17 2000-01-24 四国電力株式会社 フィルタユニット
US9865422B2 (en) * 2013-03-15 2018-01-09 Nissin Ion Equipment Co., Ltd. Plasma generator with at least one non-metallic component
HK1220287A1 (zh) 2013-03-15 2017-04-28 Glenn Lane Family Limited Liability Limited Partnership 可调节的质量分辨孔
US9959941B2 (en) 2013-04-03 2018-05-01 Lockheed Martin Corporation System for supporting structures immersed in plasma
US9928927B2 (en) 2013-04-03 2018-03-27 Lockheed Martin Corporation Heating plasma for fusion power using magnetic field oscillation
US9959942B2 (en) 2013-04-03 2018-05-01 Lockheed Martin Corporation Encapsulating magnetic fields for plasma confinement
US10049773B2 (en) 2013-04-03 2018-08-14 Lockheed Martin Corporation Heating plasma for fusion power using neutral beam injection
US9934876B2 (en) 2013-04-03 2018-04-03 Lockheed Martin Corporation Magnetic field plasma confinement for compact fusion power
US9384937B2 (en) * 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter
US9299536B2 (en) * 2013-10-17 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Wide metal-free plasma flood gun
US9070538B2 (en) * 2013-10-25 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization
US9543110B2 (en) 2013-12-20 2017-01-10 Axcelis Technologies, Inc. Reduced trace metals contamination ion source for an ion implantation system
CN104037044B (zh) * 2014-07-09 2016-09-28 北京中科信电子装备有限公司 一种离子束垂直聚焦装置
CN104797071B (zh) * 2015-04-16 2018-09-04 中国科学院等离子体物理研究所 一种磁约束天线内置式射频离子源
US10643823B2 (en) * 2018-09-07 2020-05-05 Varian Semiconductor Equipment Associates, Inc. Foam in ion implantation system
US11222768B2 (en) * 2018-09-07 2022-01-11 Varian Semiconductor Equipment Associates, Inc. Foam in ion implantation system
JP2020163377A (ja) * 2019-03-26 2020-10-08 泰男 石川 プラズマ反応方法及びプラズマ反応装置
WO2020196535A1 (ja) * 2019-03-26 2020-10-01 泰男 石川 プラズマ反応方法及びプラズマ反応装置
JPWO2021079843A1 (https=) * 2019-10-21 2021-04-29
US11562885B2 (en) 2020-07-28 2023-01-24 Applied Materials, Inc. Particle yield via beam-line pressure control
US11830705B2 (en) * 2020-08-20 2023-11-28 PIE Scientific LLC Plasma flood gun for charged particle apparatus
US20240371602A1 (en) * 2023-05-05 2024-11-07 Applied Materials, Inc. Heated Plasma Flood Gun Sweeper

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399871A (en) * 1992-12-02 1995-03-21 Applied Materials, Inc. Plasma flood system for the reduction of charging of wafers during ion implantation
TW200620372A (en) * 2004-11-19 2006-06-16 Varian Semiconductor Equipment Electron injection in ion implanter magnets
TW200746929A (en) * 2005-12-19 2007-12-16 Varian Semiconductor Equipment Technique for providing an inductively coupled radio frequency plasma flood gun

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0339554A3 (de) * 1988-04-26 1989-12-20 Hauzer Holding B.V. Hochfrequenz-Ionenstrahlquelle
US5466929A (en) 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
DE4241927C2 (de) 1992-12-11 1994-09-22 Max Planck Gesellschaft Zur Anordnung in einem Vakuumgefäß geeignete selbsttragende isolierte Elektrodenanordnung, insbesondere Antennenspule für einen Hochfrequenz-Plasmagenerator
US5354381A (en) 1993-05-07 1994-10-11 Varian Associates, Inc. Plasma immersion ion implantation (PI3) apparatus
US5589737A (en) 1994-12-06 1996-12-31 Lam Research Corporation Plasma processor for large workpieces
US5757018A (en) 1995-12-11 1998-05-26 Varian Associates, Inc. Zero deflection magnetically-suppressed Faraday for ion implanters
US5686796A (en) * 1995-12-20 1997-11-11 International Business Machines Corporation Ion implantation helicon plasma source with magnetic dipoles
JP3739137B2 (ja) * 1996-06-18 2006-01-25 日本電気株式会社 プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置
US6388381B2 (en) * 1996-09-10 2002-05-14 The Regents Of The University Of California Constricted glow discharge plasma source
GB9710380D0 (en) 1997-05-20 1997-07-16 Applied Materials Inc Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation
US5877471A (en) * 1997-06-11 1999-03-02 The Regents Of The University Of California Plasma torch having a cooled shield assembly
US6271529B1 (en) 1997-12-01 2001-08-07 Ebara Corporation Ion implantation with charge neutralization
JPH11317299A (ja) * 1998-02-17 1999-11-16 Toshiba Corp 高周波放電方法及びその装置並びに高周波処理装置
US6135128A (en) * 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
US6178919B1 (en) 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6313428B1 (en) 1999-10-12 2001-11-06 Advanced Ion Beam Technology, Inc. Apparatus and method for reducing space charge of ion beams and wafer charging
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US20020185226A1 (en) 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
JP3387488B2 (ja) 2000-12-01 2003-03-17 日新電機株式会社 イオンビーム照射装置
JP3912993B2 (ja) 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP3758520B2 (ja) 2001-04-26 2006-03-22 日新イオン機器株式会社 イオンビーム照射装置および関連の方法
US6891173B2 (en) * 2001-10-26 2005-05-10 Varian Semiconductor Equipment Associates, Inc. Ion implantation systems and methods utilizing a downstream gas source
GB0128913D0 (en) 2001-12-03 2002-01-23 Applied Materials Inc Improvements in ion sources for ion implantation apparatus
JP3680274B2 (ja) 2002-03-27 2005-08-10 住友イートンノバ株式会社 イオンビームの電荷中和装置とその方法
JP2004055614A (ja) 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
JP2004055600A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
TW200420201A (en) * 2002-12-16 2004-10-01 Japan Science & Tech Agency Plasma generation device, plasma control method and substrate manufacturing method
JP2004281232A (ja) 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
US7199064B2 (en) 2003-09-08 2007-04-03 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
JP3742638B2 (ja) 2003-09-19 2006-02-08 アプライド マテリアルズ インコーポレイテッド エレクトロンフラッド装置及びイオン注入装置
JP4533112B2 (ja) * 2004-11-30 2010-09-01 株式会社Sen ウエハ帯電抑制装置及びこれを備えたイオン注入装置
US7820020B2 (en) * 2005-02-03 2010-10-26 Applied Materials, Inc. Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
CN101341570A (zh) * 2005-12-19 2009-01-07 瓦里安半导体设备公司 提供感应耦合射频电浆浸没枪的技术
JP4001185B1 (ja) * 2007-03-06 2007-10-31 日新イオン機器株式会社 プラズマ発生装置
US7800083B2 (en) 2007-11-06 2010-09-21 Axcelis Technologies, Inc. Plasma electron flood for ion beam implanter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399871A (en) * 1992-12-02 1995-03-21 Applied Materials, Inc. Plasma flood system for the reduction of charging of wafers during ion implantation
TW200620372A (en) * 2004-11-19 2006-06-16 Varian Semiconductor Equipment Electron injection in ion implanter magnets
TW200746929A (en) * 2005-12-19 2007-12-16 Varian Semiconductor Equipment Technique for providing an inductively coupled radio frequency plasma flood gun

Also Published As

Publication number Publication date
TW201227795A (en) 2012-07-01
JP2013546122A (ja) 2013-12-26
CN103250228B (zh) 2016-01-13
US20130320854A1 (en) 2013-12-05
JP5847184B2 (ja) 2016-01-20
US8847496B2 (en) 2014-09-30
KR101631159B1 (ko) 2016-06-17
CN103250228A (zh) 2013-08-14
WO2012048256A1 (en) 2012-04-12
US8471476B2 (en) 2013-06-25
US20120085917A1 (en) 2012-04-12
KR20130126603A (ko) 2013-11-20

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