JP5840428B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP5840428B2
JP5840428B2 JP2011198088A JP2011198088A JP5840428B2 JP 5840428 B2 JP5840428 B2 JP 5840428B2 JP 2011198088 A JP2011198088 A JP 2011198088A JP 2011198088 A JP2011198088 A JP 2011198088A JP 5840428 B2 JP5840428 B2 JP 5840428B2
Authority
JP
Japan
Prior art keywords
layer
light
abbreviation
region
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011198088A
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English (en)
Japanese (ja)
Other versions
JP2012084517A (ja
JP2012084517A5 (enExample
Inventor
池田　寿雄
寿雄 池田
裕 内田
裕 内田
瀬尾　哲史
哲史 瀬尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011198088A priority Critical patent/JP5840428B2/ja
Publication of JP2012084517A publication Critical patent/JP2012084517A/ja
Publication of JP2012084517A5 publication Critical patent/JP2012084517A5/ja
Application granted granted Critical
Publication of JP5840428B2 publication Critical patent/JP5840428B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
JP2011198088A 2010-09-15 2011-09-12 発光装置 Expired - Fee Related JP5840428B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011198088A JP5840428B2 (ja) 2010-09-15 2011-09-12 発光装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010206386 2010-09-15
JP2010206386 2010-09-15
JP2011198088A JP5840428B2 (ja) 2010-09-15 2011-09-12 発光装置

Publications (3)

Publication Number Publication Date
JP2012084517A JP2012084517A (ja) 2012-04-26
JP2012084517A5 JP2012084517A5 (enExample) 2014-10-16
JP5840428B2 true JP5840428B2 (ja) 2016-01-06

Family

ID=44582691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011198088A Expired - Fee Related JP5840428B2 (ja) 2010-09-15 2011-09-12 発光装置

Country Status (4)

Country Link
US (1) US8624284B2 (enExample)
EP (1) EP2432039B1 (enExample)
JP (1) JP5840428B2 (enExample)
KR (1) KR101810589B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI641287B (zh) 2010-09-14 2018-11-11 半導體能源研究所股份有限公司 固態發光元件，發光裝置和照明裝置
WO2012053571A1 (en) * 2010-10-22 2012-04-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and lighting device
US8727586B2 (en) 2010-11-05 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Lighting device having magnetic member and magnet
JP2016082239A (ja) * 2014-10-16 2016-05-16 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器及び照明装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996008122A1 (fr) 1994-09-08 1996-03-14 Idemitsu Kosan Co., Ltd. Procede d'enrobage d'un element electroluminescent organique et d'un autre element electroluminescent organique
JP2000182769A (ja) 1998-12-11 2000-06-30 Kawaguchiko Seimitsu Co Ltd エレクトロルミネッセンス及びそれを用いた表示機器
KR100720066B1 (ko) 1999-11-09 2007-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법
WO2003047316A1 (en) * 2001-11-29 2003-06-05 The Trustees Of Princeton University Increased emission efficiency in organic light-emitting devices on high-index substrates
JP4027914B2 (ja) 2004-05-21 2007-12-26 株式会社半導体エネルギー研究所 照明装置及びそれを用いた機器
JP4770450B2 (ja) 2005-12-21 2011-09-14 パナソニック電工株式会社 有機ｅｌ照明装置
JP2008066027A (ja) 2006-09-05 2008-03-21 Fuji Electric Holdings Co Ltd 凹凸表面を有する基板およびそれを用いた有機ｅｌ素子
KR20080032882A (ko) * 2006-10-11 2008-04-16 삼성전기주식회사 발광 다이오드 패키지
JP5200361B2 (ja) 2006-10-16 2013-06-05 凸版印刷株式会社 光学用部品の製造方法
WO2008069221A1 (en) 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Plasma display panel and field emission display
WO2008069219A1 (en) 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Antireflective film and display device
WO2008069162A1 (en) 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Anti-reflection film and display device
WO2008069223A1 (en) 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Anti-reflection film and display device
JP2009110930A (ja) * 2007-08-21 2009-05-21 Fujifilm Corp 散乱部材、及びこれを用いた有機エレクトロルミネッセンス表示装置
JP5665160B2 (ja) 2008-03-26 2015-02-04 パナソニックＩｐマネジメント株式会社 発光装置および照明器具
JP5038991B2 (ja) * 2008-08-07 2012-10-03 パナソニック株式会社 有機エレクトロルミネッセンス素子の設計方法
GB0816136D0 (en) * 2008-09-04 2008-10-15 Microsharp Corp Ltd Light emitting device with improved light extraction
GB2464111B (en) 2008-10-02 2011-06-15 Cambridge Display Tech Ltd Organic electroluminescent device
JP2010118259A (ja) * 2008-11-13 2010-05-27 Kuraray Co Ltd 面光源素子およびその製造方法
JP2010206386A (ja) 2009-03-02 2010-09-16 Toshiba Corp 映像信号処理装置及びその制御方法

Also Published As

Publication number Publication date
US8624284B2 (en) 2014-01-07
US20120061708A1 (en) 2012-03-15
JP2012084517A (ja) 2012-04-26
EP2432039B1 (en) 2016-12-07
KR20120028827A (ko) 2012-03-23
EP2432039A1 (en) 2012-03-21
KR101810589B1 (ko) 2017-12-20

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