JP5837499B2 - インバータ - Google Patents
インバータ Download PDFInfo
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- JP5837499B2 JP5837499B2 JP2012529600A JP2012529600A JP5837499B2 JP 5837499 B2 JP5837499 B2 JP 5837499B2 JP 2012529600 A JP2012529600 A JP 2012529600A JP 2012529600 A JP2012529600 A JP 2012529600A JP 5837499 B2 JP5837499 B2 JP 5837499B2
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- mos transistor
- voltage
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- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 230000005669 field effect Effects 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000001934 delay Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
Description
また好ましくは、第1および第2のMOSトランジスタのしきい値電圧は同じ値である。
Claims (7)
- 直流電力を交流電力に変換するインバータであって、
第1の直流電圧を受ける第1の入力端子と、
前記第1の直流電圧よりも低い第2の直流電圧を受ける第2の入力端子と、
前記交流電力を出力するための複数の出力端子と、
各出力端子に対応して設けられ、前記第1の入力端子と対応の出力端子との間に直列接続された第1のノーマリーオン素子および第1のMOSトランジスタを含む第1のアームと、
各出力端子に対応して設けられ、対応の出力端子と前記第2の入力端子との間に直列接続された第2のノーマリーオン素子および第2のMOSトランジスタを含む第2のアームと、
互いに相補な第1および第2の制御信号をそれぞれ前記第1および第2のMOSトランジスタのゲートおよびソース間に与え、前記第1および第2のMOSトランジスタの各々をオンまたはオフさせる駆動回路とを備え、
前記第1のノーマリーオン素子のゲートは対応の出力端子に接続され、前記第2のノーマリーオン素子のゲートは前記第2の入力端子に接続され、
前記第1の制御信号が第1の論理レベルから第2の論理レベルまで上昇する期間と前記第2の制御信号が前記第2の論理レベルから前記第1の論理レベルまで下降する期間とは同じであり、
前記第1の制御信号が前記第2の論理レベルから前記第1の論理レベルまで下降する期間と前記第2の制御信号が前記第1の論理レベルから前記第2の論理レベルまで上昇する期間とは同じであり、
前記第1の制御信号が前記第1のMOSトランジスタのしきい値電圧よりも高くなると前記第1のMOSトランジスタがオンして前記第1のアームがオンし、前記第2の制御信号が前記第2のMOSトランジスタのしきい値電圧よりも低くなると前記第2のMOSトランジスタがオフして前記第2のアームがオフし、
前記第1の制御信号が前記第1のMOSトランジスタのしきい値電圧よりも低くなると前記第1のMOSトランジスタがオフして前記第1のアームがオフし、前記第2の制御信号が前記第2のMOSトランジスタのしきい値電圧よりも高くなると前記第2のMOSトランジスタがオンして前記第2のアームがオンし、
前記第1のMOSトランジスタのしきい値電圧と前記第1の制御信号の振幅電圧との第1の比、および前記第2のMOSトランジスタのしきい値電圧と前記第2の制御信号の振幅電圧との第2の比の各々は、前記第1および第2のアームが同時にオン状態にならないように設定されている、インバータ。 - 前記第1および第2の比の各々は0.2以上で1よりも小さな値に設定されている、請求項1に記載のインバータ。
- 前記第1および第2の比の各々は0.5以上で0.7以下の値に設定されている、請求項2に記載のインバータ。
- 前記第1および第2のノーマリーオン素子の各々は窒化物半導体で形成されている、請求項1から請求項3までのいずれか1項に記載のインバータ。
- 前記第1および第2のMOSトランジスタの各々の内蔵ダイオードはフリーホイールダイオードとして使用されている、請求項1から請求項4までのいずれか1項に記載のインバータ。
- 前記第1のアームは、さらに、前記第1のMOSトランジスタのドレインおよびソース間に直列接続され、前記第1のMOSトランジスタのドレインおよびソース間電圧が前記第1のMOSトランジスタの耐圧よりも低い予め定められた第1の電圧を超えた場合にオンする複数の第1のダイオードを含み、
前記第2のアームは、さらに、前記第2のMOSトランジスタのドレインおよびソース間に直列接続され、前記第2のMOSトランジスタのドレインおよびソース間電圧が前記第2のMOSトランジスタの耐圧よりも低い予め定められた第2の電圧を超えた場合にオンする複数の第2のダイオードを含む、請求項1から請求項5までのいずれか1項に記載のインバータ。 - 前記第1および第2のMOSトランジスタのしきい値電圧は同じ値である、請求項1から請求項6までのいずれか1項に記載のインバータ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012529600A JP5837499B2 (ja) | 2010-08-20 | 2011-08-16 | インバータ |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010185118 | 2010-08-20 | ||
JP2010185118 | 2010-08-20 | ||
JP2012529600A JP5837499B2 (ja) | 2010-08-20 | 2011-08-16 | インバータ |
PCT/JP2011/068559 WO2012023556A1 (ja) | 2010-08-20 | 2011-08-16 | インバータ |
Publications (2)
Publication Number | Publication Date |
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JPWO2012023556A1 JPWO2012023556A1 (ja) | 2013-10-28 |
JP5837499B2 true JP5837499B2 (ja) | 2015-12-24 |
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JP2012529600A Expired - Fee Related JP5837499B2 (ja) | 2010-08-20 | 2011-08-16 | インバータ |
Country Status (2)
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JP (1) | JP5837499B2 (ja) |
WO (1) | WO2012023556A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2648329A1 (en) * | 2012-04-04 | 2013-10-09 | Volvo Car Corporation | Three-phase inverter for driving an electric motor having cascode power switches |
JP6509621B2 (ja) | 2015-04-22 | 2019-05-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6584987B2 (ja) | 2016-03-23 | 2019-10-02 | 株式会社東芝 | 半導体装置 |
US10381473B2 (en) * | 2016-12-02 | 2019-08-13 | Vishay-Siliconix | High-electron-mobility transistor with buried interconnect |
JP7203661B2 (ja) * | 2019-03-27 | 2023-01-13 | 古河電気工業株式会社 | 電力変換装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04371021A (ja) * | 1991-06-19 | 1992-12-24 | Fujitsu Ltd | 出力回路 |
JP2002064975A (ja) * | 2000-08-17 | 2002-02-28 | Taiyo Yuden Co Ltd | Dc/dcコンバータの駆動制御方法及びdc/dcコンバータ |
JP2002335679A (ja) * | 2001-05-09 | 2002-11-22 | Toyota Industries Corp | ドライブ回路 |
JP2006324839A (ja) * | 2005-05-18 | 2006-11-30 | Fuji Electric Holdings Co Ltd | 複合型半導体装置 |
JP2007252055A (ja) * | 2006-03-15 | 2007-09-27 | Toshiba Corp | 電力変換装置 |
JP2008263068A (ja) * | 2007-04-12 | 2008-10-30 | Nec Electronics Corp | 静電気保護回路 |
JP2009054963A (ja) * | 2007-08-29 | 2009-03-12 | Hitachi Kokusai Electric Inc | スイッチング回路 |
JP2010178555A (ja) * | 2009-01-30 | 2010-08-12 | Mitsumi Electric Co Ltd | Dc−dcコンバータおよびスイッチング制御回路 |
-
2011
- 2011-08-16 WO PCT/JP2011/068559 patent/WO2012023556A1/ja active Application Filing
- 2011-08-16 JP JP2012529600A patent/JP5837499B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04371021A (ja) * | 1991-06-19 | 1992-12-24 | Fujitsu Ltd | 出力回路 |
JP2002064975A (ja) * | 2000-08-17 | 2002-02-28 | Taiyo Yuden Co Ltd | Dc/dcコンバータの駆動制御方法及びdc/dcコンバータ |
JP2002335679A (ja) * | 2001-05-09 | 2002-11-22 | Toyota Industries Corp | ドライブ回路 |
JP2006324839A (ja) * | 2005-05-18 | 2006-11-30 | Fuji Electric Holdings Co Ltd | 複合型半導体装置 |
JP2007252055A (ja) * | 2006-03-15 | 2007-09-27 | Toshiba Corp | 電力変換装置 |
JP2008263068A (ja) * | 2007-04-12 | 2008-10-30 | Nec Electronics Corp | 静電気保護回路 |
JP2009054963A (ja) * | 2007-08-29 | 2009-03-12 | Hitachi Kokusai Electric Inc | スイッチング回路 |
JP2010178555A (ja) * | 2009-01-30 | 2010-08-12 | Mitsumi Electric Co Ltd | Dc−dcコンバータおよびスイッチング制御回路 |
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Publication number | Publication date |
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JPWO2012023556A1 (ja) | 2013-10-28 |
WO2012023556A1 (ja) | 2012-02-23 |
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